Ordering number : EN7358A 30A02CH Bipolar Transistor http://onsemi.com –30V, –0.7A, Low VCE(sat) PNP Single CPH3 Applications • Low-frequency Amplifier, high-speed switching, small motor drive Features • • • Large current capacitance Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=580mΩ [IC=0.7A, IB=35mA] Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg --30 V --30 V --5 --700 V mA --1.4 A 700 mW Mounted on a ceramic board (600mm2×0.8mm) 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 30A02CH-TL-E 0.6 2.9 0.15 Packing Type: TL LOT No. AL 0.2 0.05 1.6 2.8 Marking 3 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector Electrical Connection 3 CPH3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 62012 TKIM/O3003 TSIM TA-100124 No.7358-1/6 30A02CH Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ max Unit ICBO IEBO hFE VCB= --30V, IE=0A VEB= --4V, IC=0A VCE= --2V, IC= --10mA fT Cob VCE= --10V, IC= --50mA VCB= --10V, f=1MHz 520 VCE(sat) VBE(sat) IC= --200mA, IB= --10mA IC= --200mA, IB= --10mA --110 --220 --0.9 --1.2 V(BR)CBO V(BR)CEO IC= --10μA, IE=0A IC= --1mA, RBE=∞ --30 --30 V V(BR)EBO ton IE= --10μA, IC=0A --5 V tstg tf See specified Test Circuit. 200 --100 nA --100 nA 500 MHz 4.7 pF mV V V 35 ns 125 ns 25 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR 50Ω RB RL + + 220μF 470μF VBE=5V VCC= --12V IC=20IB1= --20IB2= --300mA Ordering Information Package Shipping memo CPH3 3,000pcs./reel Pb Free --400 --300 0 --3 mA --2 5mA -- VCE= --2V A --15m A --10m --7mA --5mA --3mA --2mA --1mA --200 --500μA --100 0 0 IC -- VBE --800 20mA --700 Collector Current, IC -- mA --500 -mA 40mA Collector Current, IC -- mA --600 IC -- VCE --50 --700 --600 --500 --400 Ta=7 5°C 25°C --25°C Device 30A02CH-TL-E --300 --200 --100 IB=0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IT05049 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT05050 No.7358-2/6 30A02CH hFE -- IC 1000 Ta=75°C 25°C 5 DC Current Gain, hFE Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 VCE(sat) -- IC --1000 VCE= --2V --25°C 3 2 IC / IB=20 7 5 3 2 --100 100 7 5 5°C 5 7 Ta= °C 5 --2 5°C 3 2 2 3 --1.0 2 3 5 7 --10 3 2 5 7 --100 2 3 --10 --1.0 5 7--1000 IT05051 Collector Current, IC -- mA --1000 7 5 3 2 5°C C 25° 5 -- 3 C 25° 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 2 3 5 7 --100 2 IC / IB=20 5 3 2 --1.0 Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 --10 2 3 5 7 --100 2 Gain-Bandwidth Product, f T -- MHz Output Capacitance, Cob -- pF 5 3 2 5 7 2 --10 Collector-to-Base Voltage, VCB -- V 1kΩ ON Resistance, Ron -- Ω OUT 1kΩ 2 IB 10 7 5 3 2 1.0 7 5 3 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05052 PC -- Ta 700 M ou nt 600 500 ed on ac er am ic 400 bo ar d( 60 0m 300 m2 ✕ 0. 200 8m m ) 100 2 0.1 --0.1 2 800 IN 3 3 Collector Current, IC -- mA Ron -- IB f=1MHz 5 IT05053 Collector Dissipation, PC -- mW 100 7 5 7 100 --1.0 5 3 5 7--1000 IT05056 VCE= --10V 7 3 3 f T -- IC 1000 f=1MHz 2 5 7--1000 IT05054 Collector Current, IC -- mA Cob -- VCB 0.1 --1.0 3 VBE(sat) -- IC --0.1 --1.0 5 7--1000 IT05055 Collector Current, IC -- mA 10 5 7 --10 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 7 Ta= 3 --10 IC / IB=50 --100 7 2 Collector Current, IC -- mA VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 0 2 3 5 7 --1.0 2 Base Current, IB -- mA 3 5 7 --10 IT06403 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05047 No.7358-3/6 30A02CH Embossed Taping Specification 30A02CH-TL-E No.7358-4/6 30A02CH Outline Drawing 30A02CH-TL-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7358-5/6 30A02CH ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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