QS5U17 Transistors Small switching (30V, 2.0A) QS5U17 zExternal dimensions (Unit : mm) 2.8±0.2 (5) 0.3 to 0.6 1.0MAX 2.9±0.1 1.9±0.2 0.95 0.95 0.85±0.1 0.7±0.1 (4) 1.6± 0.2 0.1 zFeatures 1) The QS5U17 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Nch MOSFET have a low on-state resistance with a fast switching. 3) Nch MOSFET is reacted a low voltage drive (2.5V). 4) The Independently connected Schottky barrier diode have a low forward voltage. 0 to 0.1 (1) (2) (3) 0.4 +0.1 −0.05 0.16 +0.1 −0.06 Each lead has same dimensions zApplications Load switch, DC / DC conversion Abbreviated symbol : U17 zEquivalent circuit zStructure Silicon N-channel MOSFET Schottky Barrier DIODE (5) (4) ∗2 zPackaging specifications Package Type Code Basic ordering unit (pieces) QS5U17 Taping TR ∗1 3000 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Gate (2) Source (3) Anode (4) Cathode (5) Drain Rev.A 1/4 QS5U17 Transistors zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Symbol VDSS VGSS ID IDP IS ISP Tch Limits 30 12 ±2.0 ±8.0 0.8 3.2 150 VRM VR IF IFSM Tj 25 20 1.0 3.0 125 PD Tstg 1.0 −40 to 125 <MOSFET AND Di> Total power dissipation Range of Storage temperature Unit V V A A Pw≤10µs, Duty cycle≤1% A A Pw≤10µs, Duty cycle≤1% °C V V A A °C 60Hz ⋅ 1cyc. W / Total / Mounted on a ceramic board °C zElectrical characteristics (Ta=25°C) <MOSFET> Symbol Parameter Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Min. Typ. Max. − 30 − 0.5 − − − 1.5 − − − − − − − − − − − − − − 71 76 110 − 175 50 25 8 10 21 8 2.8 0.6 0.8 ±10 − 1 1.5 100 107 154 − − − − − − − − 3.9 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=±12V / VDS=0V ID=1mA, / VGS=0V VDS=30V / VGS=0V VDS=10V / ID=1mA ID=2.0A, VGS=4.5V ID=2.0A, VGS=4V ID=2.0A, VGS=2.5V VDS=10V, ID=2.0A VDS=10V VGS=0V f=1MHz ID=1.0A VDD 15V VGS=4.5V RL=15Ω RGS=10Ω VDD 15V VGS=4.5V ID=2.0A <MOSFET>Body diode (source-drain) Forward voltage VSD − − 1.2 V IS=3.2A / VGS=0V <Di> Forward voltage Reverse leakage − − − − 0.45 200 V µA IF=1.0A VR=20V Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ Conditions ∗Pulsed VF IR Rev.A 2/4 QS5U17 Transistors Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 2.5 1 GATE-SOURCE VOLTAGE : VGS (V) 100 10 0.1 1 200 ID=2A ID=1A 100 0 0 1 DRAIN CURRENT : ID (A) 2 3 4 5 6 7 8 VGS=0V Pulsed 1000 0.1 10 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 9 1000 Ta=25°C Pulsed VGS=2.5V VGS=4V VGS=4.5V 100 10 0.1 10 1 Ta=25°C f=1MHz VGS=0V Ciss 100 Coss 10 DRAIN CURRENT : ID (A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage CAPACITANCE : C (pF) SOURCE CURRENT : IS (A) 1 1 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 0.1 DRAIN CURRENT : ID (A) Ta=25°C Pulsed 10 10 100 10 300 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Fig.1 Typical Transfer Characteristics 1000 1000 DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VDS=10V Pulsed 1000 SWITCHING TIME : t (ns) DRAIN CURRENT : ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) zElectrical characteristic curves <MOSFET> Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed tf 100 td (off) td (on) 10 tr Crss 0.01 0.0 0.5 1.0 1.5 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) Fig.7 Reverse Drain Current vs. Source-Drain Current Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Switching Characteristics Rev.A 3/4 QS5U17 Transistors 1000 3 2 1 0 0 1 2 125°C 75°C 25°C −25°C 100 10 1 0.1 3 100 REVERSE CURRENT : IR (mA) Ta=25°C VDD=15V 5 ID=2A RG=10Ω Pulsed 4 FORWARD CURRENT : IF (mA) GATE-SOURCE VOLTAGE : VGS (V) 6 0 0.1 0.2 0.3 0.4 0.5 125°C 10 0.1 25°C 0.01 −25°C 0.001 0.0001 0.6 75°C 1 0 10 20 30 40 TOTAL GATE CHARGE : Qg (nC) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.10 Dynamic Input Characteristics Fig.11 Forward Current vs. Forward Voltage Fig.12 Reverse Current vs. Reverse Voltage zMeasurement circuits Pulse Width 90% VGS ID VDS RL VGS 50% 10% 50% 10% VDS 10% D.U.T. RG 90% 90% VDD td(on) tr td(off) ton Fig.13 Switching Time Measurement Circuit tf toff Fig.14 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveform Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1