RB480K Diodes Shottky barrier diode RB480K !External dimensions (Units : mm) 2.0±0.2 0.15±0.05 1.3±0.1 !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V A IO 0.1 IFSM 1 A Junction temperature Tj 125 ˚C Storage temperature Tstg −40∼+125 ˚C Mean rectifying current Peak forward surge current∗ ∗60Hz for 1 2.1±0.1 0.25±0.1 0.65 0.65 0.15±0.05 ∗There are two different markings. !Circuit Parameter 0.25±0.1 0∼0.1 1.3±0.1 ROHM: UMD4 EIAJ: SC-82 JEDEC: SOT-343 !Construction Silicon epitaxial planar 0.1Min. 1pin MARK 0.25±0.1 1.25±0.1 2.1±0.1 1.25±0.1 0∼0.1 0.2±0.1 0.65 0.65 0.7 0.65 0.65 0.25±0.1 0.1Min. 0.7 0.2±0.1 0.2±0.1 0.9±0.1 1.3±0.1 0.6 0.65 0.3±0.1 3T !Features 1) Small surface mounting (UMD4) 2) Low IR. (IR=0.3µA Typ.) 3) This is a composite component and is ideal for reducing the number of components used. 4) High reliability. 2.0±0.2 0.9±0.1 1.25±0.1 3T !Applications Low current rectification RB480K Diodes !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Forward voltage Reverse current Capacitance between terminals Conditions VF1 − − 0.45 V VF2 − − 0.60 V IF=100mA IR1 − − 1 µA VR=10V IR2 − − 5 µA VR=40V Ct1 − 6.0 − pF VR=10V, f=1MHz Ct2 − − 25 pF VR=0V IF=10mA 1m REVERSE CURRENT : IR (A) 1 −2 25 ˚C 5˚ C =1 10m 75 25 ˚C ˚C 100m Ta FORWARD CURRENT : IF (A) CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta=25°C) 1m 100µ 10µ 0 0.1 0.2 0.3 0.4 0.5 0.6 Fig.1 Foward temperature chraracteristics Ta=25˚C I surge (A) 20 I surge PULSE WIDTH 0 100µ 1m 10m 100m PULSE WIDTH (sec) Fig.4 Surge current chraracteristics Ta=125˚C 10µ 75˚C 1µ 25˚C 100n 10n 0 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) 10 0.7 100µ 1 Fig.2 Reverse temperature chraracteristics 40 100 50 20 10 5 2 0 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) Fig.3 Capacitance between terminals chraracteristics