1SS390 Diodes Band switching diode 1SS390 !External dimensions (Units : mm) !Applications High frequency switching CATHODE MARK 1.6±0.1 1.2±0.05 !Features 1) Extremely Small surface mounting type. (EMD2) 2) High reliability. !Construction Silicon epitaxial planar 0.12±0.05 0.3±0.05 0.6±0.1 0.8±0.05 ROHM : EMD2 EIAJ : SC-79 JEDEC : SOD-523 !Absolute maximum ratings (Ta=25°C) Parameter DC reverse voltage Symbol Limits Unit VR 35 V DC forward current IF 100 mA Junction temperature Tj 125 °C Storage temperature Tstg −55~+125 °C !Electrical characteristics (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VF − − 1.0 V Conditions IF=10mA Reverse current IR − − 10 nA VR=25V Capacitance between terminals CT − − 1.2 pF VR=6V, f=1MHz Forward operating resistance rF − − 0.9 Ω IF=2mA, f=100MHz 1SS390 Diodes 10.0 1 REVERSE CURRENT : IR (nA) FORWARD CURRENT : IF(mA) 100m 10m 1m 100µ 10µ 1.0 1µ 100n 0.4 FORWARD OPERATING RESISTANCE : rF (Ω) CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta=25°C) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 20 30 40 50 2 1 0 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 1.0 f=100MHz 0.5 0.2 0 1 0.1 0 3 2 5 10 FORWARD CURRENT : IF (mA) Fig. 4 Forward operating resistance characteristics