SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC15S01G THRU RC15S10G SILICON GPP CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 15A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces • Ideal for hybrids MECHANICAL DATA • Polarity: Bottom or upper electrode denotes cathode according to the notice in in package Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS SYMBOL Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current VRRM VRMS VDC (Ta=55oC) (Note 2) Peak Forward Surge Current (8.3ms single half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage (at rated forward current) Maximum DC Reverse Current Ta=25oC (at rated DC blocking voltage) o Ta=150 C RC15S RC15S RC15S RC15S RC15S RC15S UNITS 01G 02G 04G 06G 08G 10G 100 200 400 600 800 1000 V 70 140 280 420 560 700 V 100 200 400 600 800 1000 V IF(AV) 15 A IFSM 400 A VF 1.0 V 10 µA 300 µA IR CJ Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 3) Rθ(ja) Storage and Operation Junction Temperature TSTG,TJ Note: 1. Measured at 1 MHz and applied voltage of 4.0Vdc 2. When mounted to heat sink from body. 3. Thermal resistance from junction to ambient. 300 1 -50 to +150 pF o C/W o C http://www.sse-diode.com