RHRG7570, RHRG7580, RHRG7590, RHRG75100 Data Sheet 75A, 700V - 1000V Hyperfast Diodes RHRG7570, RHRG7580, RHRG7590 and RHRG75100 (TA49068) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Ordering Information April 1995 3923.1 Features • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V • Avalanche Energy Rated • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Package PACKAGING AVAILABILITY PART NUMBER File Number PACKAGE JEDEC STYLE TO-247 BRAND RHRG7570 TO-247 RHRG7570 RHRG7580 TO-247 RHRG7580 RHRG7590 TO-247 RHRG7590 RHRG75100 TO-247 RHRG75100 ANODE CATHODE (BOTTOM SIDE METAL) CATHODE NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified RHRG7570 RHRG7580 RHRG7590 RHRG75100 UNITS Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . .VRRM 700 800 900 1000 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . VRWM 700 800 900 1000 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 700 800 900 1000 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +52oC) 75 75 75 75 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . .IFSM (Square Wave, 20kHz) 150 150 150 150 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . .IFSM (Halfwave, 1 Phase, 60Hz) 750 750 750 750 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 190 190 190 190 W Avalanche Energy (L = 40mH) (See Figures 10 and 11). . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . TSTG, TJ 50 50 50 50 mj -65 to +175 -65 to +175 -65 to +175 -65 to +175 oC 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 RHRG7570, RHRG7580, RHRG7590, RHRG75100 TC = +25oC, Unless Otherwise Specified Electrical Specifications RHRG7570 RHRG7580 RHRG7590 RHRG75100 SYMBOL TEST CONDITION MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS VF IF = 75A, TC = +25oC IF = 75A, TC = +150oC VR = 700V, TC = +25oC VR = 800V, TC = +25oC VR = 900V, TC = +25oC VR = 1000V, TC = +25oC VR = 700V, TC = +150oC VR = 800V, TC = +150oC VR = 900V, TC = +150oC VR = 1000V, TC = +150oC - - 3.0 - - 3.0 - - 3.0 - - 3.0 V IR IR - - 2.5 - - 2.5 - - 2.5 - - 2.5 V - - 500 - - - - - - - - - µA - - - - - 500 - - - - - - µA - - - - - - - - 500 - - - µA - - - - - - - - - - - 500 µA - - 2.0 - - - - - - - - - mA - - - - - 2.0 - - - - - - mA - - - - - - - - 2.0 - - - mA - - - - - - - - - - - 2.0 mA IF = 1A, dIF/dt = 100A/µs - - 85 - - 85 - - 85 - - 85 ns IF = 75A, dIF/dt = 100A/µs - - 100 - - 100 - - 100 - - 100 ns tA IF = 75A, dIF/dt = 100A/µs - 55 - - 55 - - 55 - - 55 - ns tB IF = 75A, dIF/dt = 100A/µs - 40 - - 40 - - 40 - - 40 - ns QRR IF = 75A, dIF/dt = 100A/µs - 240 - - 240 - - 240 - - 240 - nC VR = 10V, IF = 0A - 220 - - 220 - - 220 - - 220 - pF - - 0.8 - - 0.8 - - 0.8 - - 0.8 oC/W tRR CJ RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 +V3 t1 ≥ 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) ≤ R4 10 Q2 Q1 +V1 0 LLOOP t2 R2 t1 IF dIF dt tRR tA tB 0 DUT 0.25 IRM Q4 IRM t3 C1 0 VR R4 Q3 -V2 -V4 R3 FIGURE 1. tRR TEST CIRCUIT 2 VRM FIGURE 2. tRR WAVEFORMS AND DEFINITIONS RHRG7570, RHRG7580, RHRG7590, RHRG75100 Typical Performance Curves 1000 400 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) +175oC 100 +100oC +175oC +25oC 10 0 1 3 2 VF, FORWARD VOLTAGE (V) 1 0.1 +25oC 0 5 4 +100oC 10 0.01 1 200 400 800 600 1000 VR , REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE TC = +25oC TC = +100oC 300 100 250 80 tRR t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 100 60 tA 40 tB 20 200 tRR 150 tB 100 tA 50 0 1 0 75 10 1 75 10 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC TC = +175oC IF(AV), AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) 500 400 tRR 300 200 tB 100 tA 0 10 1 IF, FORWARD CURRENT (A) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC 3 75 75 60 DC 45 SQ. WAVE 30 15 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES RHRG7570, RHRG7580, RHRG7590, RHRG75100 Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 800 700 600 500 400 300 200 100 0 0 50 200 150 100 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L 130Ω R + VDD 1MΩ DUT 12V VAVL Q2 130Ω CURRENT SENSE IL IL I V VDD 12V t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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