RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics (tRR < 55ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Avalanche Energy Rated • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits Formerly developmental type TA49058. • General Purpose PACKAGE AVAILABILITY PART NUMBER RHRP6120CC PACKAGE TO-220AB Symbol BRAND K RHR6120C NOTE: When ordering, use the entire part number. A1 A2 Packaging JEDEC TO-220AB ANODE 2 CATHODE ANODE 1 CATHODE (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 RHRP6120CC Absolute Maximum Ratings (Per Leg) TC = +25oC, Unless Otherwise Specified RHRP6120CC UNITS 1200 1200 1200 6 V V V A 12 A 60 A 50 10 -65 to +175 W mJ oC Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) TC = 130oC Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Square Wave, 20kHz Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 Phase, 60Hz Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG,TJ CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications SYMBOL (Per Leg) TC = +25oC, Unless Otherwise Specified MIN TYP MAX UNITS IF = 6A, TC = +25oC - - 3.2 V IF = 6A, TC = +150oC - - 2.6 V VR = 1200V, TC = +25oC - - 100 µA VR = 1200V, TC = +150oC - - 500 µA IF = 1A, dIF/dt = 200A/µs - - 55 ns IF = 6A, dIF/dt = 200A/µs - - 65 ns tA IF = 6A, dIF/dt = 200A/µs - 33 - ns tB IF = 6A, dIF/dt = 200A/µs - 22 - ns QRR IF = 6A, dIF/dt = 200A/µs - 210 - nC VR = 10V, IF = 0A - 22 - pF - - 3 oC/W VF IR tRR CJ TEST CONDITION RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 9), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 9). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. 2 RHRP6120CC Typical Performance Curves 500 30 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) +175oC 10 +175oC +25oC +100oC 1 0.5 1 0 2 100 3 10 +100oC 1 0.1 +25oC 0.01 4 0 200 VF, FORWARD VOLTAGE (V) FIGURE 1. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 100 TC = +25oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 50 tRR 30 tA 20 tB 10 1 6 60 tRR 40 tA 20 tB 1 FIGURE 4. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 100oC IF(AV) , AVERAGE FORWARD CURRENT (A) 125 t, RECOVERY TIMES (ns) TC = +175oC, dIF/dt = 200A/µs 100 tRR 50 tA 0 0.5 tB 1 6 IF , FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 175oC 3 6 IF, FORWARD CURRENT (A) FIGURE 3. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 25oC 25 1200 80 IF, FORWARD CURRENT (A) 75 1000 TC = +100oC, dIF/dt = 200A/µs 0 0.5 0 0.5 800 600 FIGURE 2. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 60 40 400 VR , REVERSE VOLTAGE (V) 6 5 DC 4 SQ. WAVE 3 2 1 0 100 115 130 145 160 TC , CASE TEMPERATURE (oC) FIGURE 6. CURRENT DERATING CURVE 175 RHRP6120CC Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 100 80 60 40 20 0 0 150 100 50 200 VR , REVERSE VOLTAGE (V) FIGURE 7. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuits and Waveforms V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R1 L1 = SELF INDUCTANCE OF R4 + LLOOP Q1 +V1 +V3 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) £ R4 10 Q2 0 LLOOP t2 R2 t1 IF DUT dIF dt tRR tA tB 0 Q4 0.25 IRM t3 C1 0 IRM R4 Q3 -V2 -V4 R3 VR VRM FIGURE 8. tRR TEST CIRCUIT FIGURE 9. tRR WAVEFORMS AND DEFINITIONS L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs L Q1 130Ω R + VDD 1MΩ DUT 12V VAVL Q2 130Ω CURRENT SENSE IL IL I V VDD 12V t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT 4 t1 t2 FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS t RHRP6120CC TO-220AB 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE A INCHES E ØP A1 Q H1 TERM. 4 D 45o E1 D1 L1 b1 L b c MIN MAX MIN MAX NOTES A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 - b 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 2, 3 c 0.014 0.019 0.36 0.48 2, 3, 4 D 0.590 0.610 14.99 15.49 - 4.06 - 10.41 - D1 - 0.160 E 0.395 0.410 E1 - 0.030 e 60o 1 2 e1 3 e J1 e1 LEAD 1. ANODE 1 LEAD 2. CATHODE LEAD 3. ANODE 2 TERM. 4. CATHODE MILLIMETERS SYMBOL H1 0.100 TYP 0.200 BSC 0.235 0.255 10.04 - 0.76 - 2.54 TYP 5 5.08 BSC 5 5.97 6.47 - J1 0.100 0.110 2.54 2.79 6 L 0.530 0.550 13.47 13.97 - L1 0.130 0.150 3.31 3.81 2 ØP 0.149 0.153 3.79 3.88 - Q 0.102 0.112 2.60 2.84 - NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 1 dated 1-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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