RENESAS RJK4502DJE-00Z0

Preliminary Datasheet
RJK4502DJE
450V - 2.8A - MOS FET
High Speed Power Switching
R07DS0843EJ0200
Rev.2.00
Aug 10, 2012
Features
 Low on-state resistance
RDS(on) = 3  typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25C)
 High speed switching
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
1. Source
2. Drain
3. Gate
G
32
S
1
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal Impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID Note1
ID(pulse) Note3
IDR Note1
IDR(pulse) Note3
Pch Note 2
ch-a
Value
450
30
2.8
5.6
2.8
5.6
0.9
139
Unit
V
V
A
A
A
A
W
C/W
Tch
Tstg
150
–55 to +150
C
C
Notes: 1. Limited by Tch max.
2. Value at Tc = 25C
3. Pulse width limited by safe operating area.
R07DS0843EJ0200 Rev.2.00
Aug 10, 2012
Page 1 of 3
RJK4502DJE
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Symbol
Min
450
Typ
—
Max
—
Unit
V
—
—
—
3.00
1
0.1
4.5
3.85
A
A
V

VDS = 450 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 1.4 A, VGS = 10 V Note 4
VDS = 25 V
VGS = 0
f = 1 MHz
Drain to source breakdown
voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
V(BR)DSS
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
RDS(on)
—
—
3.5
—
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
163
22
2.6
11
12
21
20
6.4
1.5
3.2
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDF
—
—
0.9
200
1.5
—
V
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
IDSS
IGSS
VGS(off)
trr
Test Conditions
ID = 10 mA, VGS = 0
ID = 1.4 A
VGS = 10 V
RL = 160 
Rg = 10 
VDD = 360 V
VGS = 10 V
ID = 2.8 A
IF = 2.8 A, VGS = 0 Note 4
IF = 2.8 A, VGS = 0
VDD = 360 V
diF/dt = 100 A/s
4. Pulse test
5. Since this device is equipped with high voltage FET chip (VDSS 450 V), high voltage may be supplied.
Therefore, please be sure to confirm about electric discharge between drain terminal and other terminal.
6. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0843EJ0200 Rev.2.00
Aug 10, 2012
Page 2 of 3
RJK4502DJE
Preliminary
Package Dimensions
Package Name
TO-92 Mod
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Previous Code
TO-92 Mod / TO-92 ModV
MASS[Typ.]
0.35g
4.8 ± 0.4
Unit: mm
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Ordering Information
Orderable Part No.
RJK4502DJE-00#Z0
Note:
Quantity
Shipping Container
Hold Box, Radial Taping
2500 pcs
Leads is forming applied as following figure.
Unit: mm
18.0
9.0
19.0
16.0
28.0 max.
12.7
2.5 2.5
6.35
12.7
R07DS0843EJ0200 Rev.2.00
Aug 10, 2012
4.0
Page 3 of 3
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