RU2H50Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 200V/60A, RDS (ON) =34mΩ (Type) @ VGS=10V • Low Gate Charge • Fast Switching • 100% avalanche tested • 175°C Operating Temperature TO-247 • Lead Free,RoHS compliant Applications • Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 60 A TC=25°C 230 TC=25°C 60 TC=100°C TC=25°C 45 326 TC=100°C 163 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ① A ② ② A W 0.46 °C/W 157 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. C– FEB., 2012 www.ruichips.com RU2H50Q Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Test Condition RU2H50Q Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA V 200 VDS= 200V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=28A 30 2 3 34 µA 4 V ±100 nA 40 mΩ 1.2 V Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=28A, VGS=0V ISD=28A, dlSD/dt=100A/µs 212 ns 980 nC 3.8 Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=50V, Frequency=1.0MHz 4550 pF 620 155 18 VDD=100V, RL=35Ω, IDS=28A, VGEN= 10V, RG=6Ω Turn-off Fall Time 70 ns 56 45 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 160 VDS=160V, VGS= 10V, IDS=28A 29 208 nC 70 Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Current limited by bond wire. Limited by TJmax, IAS =21A, VDD = 60V, RG = 47Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. C– FEB., 2012 2 www.ruichips.com RU2H50Q Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– FEB., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU2H50Q Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– FEB., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU2H50Q Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– FEB., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU2H50Q Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. C– FEB., 2012 6 www.ruichips.com RU2H50Q Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU2H50Q RU2H50Q TO-247 Tube 30 - - Copyright Ruichips Semiconductor Co., Ltd Rev. C– FEB., 2012 7 www.ruichips.com RU2H50Q Package Information TO-247 SYMBOL MM INCH MM SYMBOL MIN INCH MIN MAX MIN MAX A 4.850 5.150 0,191 0.200 E2 MAX A1 2.200 2.600 0.087 0.102 L 40.900 41.300 1.610 1.626 3.600 REF MIN MAX 0.142 REF B 1.000 1.400 0.039 0.055 L1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 L2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 Φ 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 TYP 0.215 TYP c1 1.900 2.100 0.075 0.083 H 5.980 REF. 0.235 REF. D 15.450 15.750 0.608 0.620 h E1 3.500 REF. 0.000 0.300 0.000 0.012 0.138 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. C– FEB., 2012 8 www.ruichips.com RU2H50Q Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. C– FEB., 2012 9 www.ruichips.com