RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET TSMT3 zFeatures 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : XF (3) Drain zApplication Switching zEquivalent circuit zPackaging specifications Package Type (3) Taping TL Code Basic ordering unit (pieces) 3000 RUR040N02 ∗2 (1) ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 20 ±10 ±4.0 ±8.0 0.8 8.0 1.0 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board 1/4 RUR040N02 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − 20 − 0.3 − − − − Typ. − − − − 25 33 42 55 Max. ±10 − 1 1.3 35 46 59 110 Unit µA V µA V mΩ mΩ mΩ mΩ 5.0 − − − − − − − − 680 150 90 10 30 50 60 − − − − − − − − S pF pF pF ns ns ns ns ∗ − 8 − nC ∗ − 1.8 − nC ∗ − 1.3 − nC IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Gate-source charge Qgs Gate-drain charge Qgd ∗ ∗ ∗ ∗ ∗ Conditions VGS=±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 4.0A, VGS= 4.5V ID= 4.0A, VGS= 2.5V ID= 2.0A, VGS= 1.8V ID= 0.8A, VGS= 1.5V VDS= 10V, ID= 4.0A VDS= 10V VGS=0V f=1MHz ID= 2.0A, VDD 10V VGS= 4.5V RL 5Ω, RG=10Ω ID= 4.0A, VDD 10V VGS= 4.5V RL 2.5Ω, RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − 1.2 V Conditions IS= 0.8A, VGS=0V ∗Pulsed 2/4 RUR040N02 Transistors STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1000 VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 0.1 1 10 1000 VGS=2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 0.1 1 10 Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) VGS=1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 0.1 1 10 1000 Ta=25°C Pulsed VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (Ι ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) 10 Ta=25°C Pulsed ID=4.0A ID=2.0A 60 40 20 0 0 VGS=1.5V Pulsed DRAIN CURRENT : ID (A) 100 80 10 1000 5 10 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voletage VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1 0.1 0.01 0.0 10000 CAPACITANCE : C (pF) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) GATE-SOURCE VOLTAGE : VGS (V) SOURCE CURRENT : IS (A) DRAIN CURRENT : ID (A) VDS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) zElectrical characteristic curves 0.5 1.0 1.5 Ta=25°C f=1MHz VGS=0V 1000 Ciss Coss Crss 100 10 0.01 0.1 1 10 100 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.8 Source Current vs. Source-Drain Voltage Fig.9 Typical Capacitance vs. Drain-Source Voltage 3/4 RUR040N02 SWITCHING TIME : t (ns) Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed 1000 tf 100 td(off) td(on) 10 tr 1 0.01 GATE-SOURCE VOLTAGE : VGS (V) 6 10000 FORWARD TRANSFER ADMITTANCE Yfs (S) Transistors Ta=25°C VDD=10V ID=4.0V RG=10Ω Pulsed 4 2 100 0 0.1 1 0 10 1 2 3 4 5 6 7 8 VDS=10V Pulsed Ta=−25°C Ta=25°C Ta=75°C Ta=125°C 10 1 0.1 0.01 0.1 9 10 11 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.10 Switching Characteristics Fig.11 Dynamic Input Characteristics Fig.12 Forward Transfer Admittance vs. Drain Current zMeasurement circuits Pulse Width VGS ID VDS 90% 50% 10% VGS RL VDS 50% 10% D.U.T. 10% RG VDD 90% td(on) ton Fig.13 Switching Time Test Circuit 90% td(off) tr tr toff Fig.14 Switching Time Waveforms VG VGS ID VDS RL IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.15 Gate Charge Test Circuit Fig.16 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0