RZR025P01 Transistors 1.5V Drive Pch MOSFET RZR025P01 zDimensions (Unit : mm) zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V). TSMT3 1.0MAX 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.3~0.6 zApplication Switching 0~0.1 (2) (1) 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source (3) Drain Abbreviated symbol : YC zStructure Silicon P-channel MOSFET zPackaging specifications Package Type zEquivalent circuit Taping (3) TL Code Basic ordering unit (pieces) 3000 RZR025P01 ∗2 (1) ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −12 ±10 ±2.5 ±10 −0.8 −10 1.0 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth (ch-a) ∗ Limits 125 °C / W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Unit ∗ When mounted on a ceramic board. 1/5 RZR025P01 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 3.5 Input capacitance − Ciss Output capacitance − Coss Reverse transfer capacitance − Crss td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. − − − − 44 60 81 Max. ±10 − −1 −1.0 61 84 121 110 − 1350 130 125 9 35 130 85 13 2.5 2.0 220 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −2.5A, VGS= −4.5V ID= −1.2A, VGS= −2.5V ID= −1.2A, VGS= −1.8V ID= −0.5A, VGS= −1.5V VDS= −6V, ID= −2.5A VDS= −6V VGS=0V f=1MHz ID= −1.2A VDD −6V VGS= −4.5V RL=5Ω RG=10Ω VDD −6V, ID= −2.5A VGS= −4.5V RL 2.4Ω, RG=10Ω ∗Pulsed zBody diode characteristics(Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V Conditions IS= −2.5A, VGS=0V ∗ Pulsed 2/5 RZR025P01 Transistors zElectrical characteristic curves 10 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -2.5V VGS= -2.0V 8 6 VGS= -1.6V 4 2 10 Ta=25℃ Pulsed 8 4 VGS= -1.5V 2 VGS= -1.2V VGS= -1.2V 0 0 0.2 0.4 0.6 0.8 0 1.0 2 DRAIN-SOURCE VOLTAGE -VDS[V] 8 0.01 0.0 10 100 . VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.1 1 Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ 10 0.1 1 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ 10 0.1 1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) REVERSE DRAIN CURRENT : -Is [A] Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ VGS= -1.5V Pulsed 100 Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ 10 0.1 10 DRAIN CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 100 1 DRAIN CURRENT : -ID [A] 100 10 1000 VGS= -1.8V Pulsed 0.1 VGS= -2.5V Pulsed DRAIN CURRENT : -ID [A] 1000 1.5 1000 100 10 1.0 Fig.3 Typical Transfer Characteristics VGS= -4.5V Pulsed DRAIN CURRENT : -ID [A] 10 0.5 GATE-SOURCE VOLTAGE : -VGS [V] 1000 Ta=25℃ Pulsed 10 0.1 Fig.2 Typical Output Characteristics(Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 6 Ta= 125°C Ta= 75℃ Ta= 25℃ Ta= - 25℃ DRAIN-SOURCE VOLTAGE -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 4 VDS= -6V Pulsed 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 0.0 1000 VGS= -1.8V VGS= -10V VGS= -4.5V VGS= -2.5V 6 DRAIN CURRENT : -ID [A] Ta=25℃ Pulsed DRAIN CURRENT -ID[A] DRAIN CURRENT -ID[A] 10 1 DRAIN CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10 10 VGS=0V Pulsed 1 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 1.2 RZR025P01 100 Ta=25℃ Pulsed VDS= -6V Pulsed 150 ID= -2.5A 100 ID= -1.2A 50 10 0 Ta= -25℃ Ta=25℃ Ta=75℃ Ta=125℃ 1 5 0.1 10 5 Ta=25℃ VDD= -6V ID= -2.5A RG=10Ω Pulsed 4 3 2 1 0 0 0 1.0 DRAIN CURRENT : -ID [A] GATE-SOURCE VOLTAGE : -VGS [V] 10.0 0 2 4 6 8 10 12 Fig.12 Dynamic Input Characteristics 1000 10000 1000 Ciss Crss 100 Coss Ta=25℃ f=1MHz VGS=0V 10 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE : -VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage 100 SWITCHING TIME : t [ns] td(off) tf 100 10 td(on) Ta=25℃ VDD= -6V VGS=-4.5V RG=10Ω Pulsed tr 1 0.01 0.1 1 14 TOTAL GATE CHARGE : Qg [nC] Fig.11 Forward Transfer Admittance vs. Drain Current Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] 200 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] Transistors 10 DRAIN CURRENT : -ID [A] Fig.14 Switching Characteristics 4/5 RZR025P01 Transistors zMeasurement circuits Pulse width VGS ID VDS VGS 10% 50% 50% 90% RL D.U.T. 10% 10% RG VDD VDS 90% td(on) 90% td(off) tr ton tf toff Fig.16 Switching Time Waveforms Fig.15 Switching Time Test Circuit VG VGS ID VDS RL IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.17 Gate Charge Test Circuit Fig.18 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0