4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • • • • • • Isolation Test Voltage 5300 VRMS Interfaces with Common Logic Families Input-output Coupling Capacitance < 0.5 pF Industry Standard Dual-in-line 6-pin Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 6 B C 2 5 C NC 3 4 E e3 i179004 Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Applications AC Mains Detection Reed relay driving Switch Mode Power Supply Feedback Telephone Ring Detection Logic Ground Isolation Logic Coupling with High Frequency Noise Rejection Description The 4N25 family is an Industry Standard Single Channel Phototransistor Coupler.This family includes the 4N25/ 4N26/ 4N27/ 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through special Vishay manufacturing process. Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available by ordering option1. Pb Pb-free These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are also available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. Note: For additional design information see Application Note 45 Normalized Curves Order Information Part Remarks 4N25 CTR > 20 %, DIP-6 4N26 CTR > 20 %, DIP-6 4N27 CTR > 10 %, DIP-6 4N28 CTR > 10 %, DIP-6 4N25-X006 CTR > 20 %, DIP-6 400 mil (option 6) 4N25-X007 CTR > 20 %, SMD-6 (option 7) 4N25-X009 CTR > 20 %, SMD-6 (option 9) 4N26-X006 CTR > 20 %, DIP-6 400 mil (option 6) 4N26-X007 CTR > 20 %, SMD-6 (option 7) 4N26-X009 CTR > 20 %, SMD-6 (option 9) 4N27-X007 CTR > 10 %, SMD-6 (option 7) 4N27-X009 CTR > 10 %, SMD-6 (option 9) 4N28-X009 CTR > 10 %, SMD-6 (option 9) For additional information on the available options refer to Option Information. Document Number 83725 Rev. 1.4, 26-Jan-05 www.vishay.com 1 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter Test condition VR 6.0 V Forward current IF 60 mA IFSM 2.5 A Pdiss 100 mW t < 10 µs Surge current Power dissipation Unit Output Symbol Value Unit Collector-emitter breakdown voltage Parameter Test condition VCEO 70 V Emitter-base breakdown voltage VEBO 7.0 V Collector current IC 50 mA IC 100 mA Pdiss 150 mW Symbol Value Unit VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Collector currrent t < 1.0 ms Power dissipation Coupler Parameter Test condition Isolation test voltage Comparative tracking index DIN IEC 112/VDE0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Junction temperature Soldering temperature www.vishay.com 2 max.10 s, dip soldering: distance to seating plane ≥ 1.5 mm 175 Document Number 83725 Rev. 1.4, 26-Jan-05 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Max Unit 1.3 1.5 V VR = 3.0 V IR 0.1 100 µA VR = 0 V CO 25 current1) Capacitance 1) Typ. VF IF = 50 mA Forward voltage Reverse Test condition 1) Symbol Min pF Indicates JEDEC registered values Output Parameter Collector-base breakdown Symbol Min IC = 100 µA Test condition Part BVCBO 70 Typ. Max Unit V IC = 1.0 mA BVCEO 30 V IE = 100 µA BVECO 7.0 V voltage1) Collector-emitter breakdown voltage1) Emitter-collector breakdown voltage1) VCE = 10 V, (base open) ICEO(dark)1) ICBO(dark)1) VCB = 10 V, (emitter open) Collector-emitter capacitance VCE = 0 1) 4N25 5.0 50 nA 4N26 5.0 50 nA 4N27 5.0 50 nA 4N28 10 100 nA 2.0 20 nA CCE 6.0 pF Indicates JEDEC registered values Coupler Parameter Isolation voltage 1) Test condition Peak, 60 Hz Part Symbol Min 4N25 VIO 2500 V 4N26 VIO 1500 V 4N27 VIO 1500 V VIO 500 4N28 Saturation voltage, collectoremitter ICE = 2.0 mA, IF = 50 mA Resistance, input output1) VIO = 500 V RIO Capacitance (input-output) f = 1.0 MHz CIO 1) Typ. Max Unit V VCE(sat) 0.5 100 V GΩ 0.5 pF Indicates JEDEC registered values Current Transfer Ratio Parameter DC Current Transfer Ratio1) 1) Test condition Part Symbol Min Typ. VCE = 10 V, IF = 10 mA 4N25 CTRDC 20 50 Max Unit % 4N26 CTRDC 20 50 % 4N27 CTRDC 10 30 % 4N28 CTRDC 10 30 % Indicates JEDEC registered value Document Number 83725 Rev. 1.4, 26-Jan-05 www.vishay.com 3 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Switching Characteristics Parameter Test condition Rise and fall times VCE = 10 V, IF = 10 mA, RL = 100 Ω Symbol Min tr, tf Typ. Max Unit µs 2.0 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.4 VF - Forward Voltage - V 1.3 NCTR - Normalized CTR 1.5 TA = –55°C 1.2 TA = 25°C 1.1 1.0 0.9 TA = 85°C 0.8 .1 1 10 IF - Forward Current - mA TA=50°C 0.5 NCTR(SAT) NCTR .1 100 i4n25_01 1 10 IF- LED Current - mA 100 i4n25_03 Figure 1. Forward Voltage vs. Forward Current Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Current 1.5 1.5 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V NCTR - Normalized CTR NCTR - Normlized CTR 1.0 0.0 0.7 1.0 TA=25°C 0.5 NCTR(SAT) NCTR Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V 1.0 TA=70°C 0.5 NCTR(SAT) NCTR 0.0 0.0 .1 0 1 10 IF - LED Current - mA 100 i4n25_02 Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current www.vishay.com 4 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V 1 10 IF - LED Current - mA 100 i4n25_04 Figure 4. Normalized Non-saturated and saturated CTR vs. LED Current Document Number 83725 Rev. 1.4, 26-Jan-05 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors 1.5 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce = 0.4 V Normalized to: Vcb=9.3 V, IF=10 mA, TA=25°C NCTRcb - Normalized CTRcb NCTR - Normalized CTR 1.5 1.0 TA=85°C 0.5 NCTR(SAT) NCTR 1.0 0.5 25°C 50°C 70°C 0.0 .1 0.0 .1 1 10 IF - LED Current - mA 100 i4n25_05 10 100 i4n25_08 Figure 8. Normalized CTRcb vs. LED Current and Temp. Figure 5. Normalized Non-saturated and saturated CTR vs. LED Current 35 10 Normalized to: IF=10 mA, TA=25°C 25 Normalized Photocurrent 30 Ice - Collector Current - mA 1 IF - LED Current - mA 50°C 20 70°C 15 25°C 85°C 10 5 1 0.1 Nib, TA=–20°C Nib, TA= 25°C Nib, TA= 50°C Nib, TA= 70°C 0 0 10 20 30 40 50 60 0.01 .1 IF - LED Current - mA i4n25_06 10 10 10 10 10 5 1.2 100 70°C 4 NHFE - Normalized HFE 10 10 Figure 9. Normalized Photocurrent vs. IF and Temp. Figure 6. Collector-Emitter Current vs. Temperature and LED Current Iceo - Collector-Emitter - nA 1 IF - LED Current - mA i4n25_09 3 2 Vce = 10 V 1 Typical 0 10 –1 10 –2 –20 0 20 40 60 80 TA - Ambient Temperature - °C 25°C –20°C 0.8 Normalized to: Ib=20 µA, Vce=10 V, TA=25°C 0.6 0.4 100 i4n25_07 1.0 1 10 100 Ib - Base Current - µA 1000 i4n25_10 Figure 7. Collector-Emitter Leakage Current vs.Temp. Document Number 83725 Rev. 1.4, 26-Jan-05 Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature www.vishay.com 5 4N25/ 4N26/ 4N27/ 4N28 NHFE(sat) - Normalized Saturated HFE Vishay Semiconductors 1.5 Normalized to: Vce=10 V, Ib=20 µA T A =25°C 50°C 70°C VCC = 5.0 V 1.0 F=10 KHz, DF=50% 25°C RL VO –20°C 0.5 IF=1 0 mA Vce=0.4 V 0.0 1 10 100 1000 Ib - Base Current - µA i4n25_11 i4n25_14 Figure 11. Normalized HFE vs. Base Current and Temp. tPLH - Propagation Delay - µs IF =10 mA,TA=25°C VCC =5.0 V, Vth=1.5 V tPHL 2.0 10 1.5 tPLH 1 .1 tPHL - Propagation Delay - µs 2.5 1000 100 Figure 14. Switching Schematic 1.0 1 10 100 RL - Collector Load Resistor - kΩ i4n25_12 Figure 12. Propagation Delay vs. Collector Load Resistor IF tD VO tR tPLH VTH=1.5 V tPHL tS tF i4n25_13 Figure 13. Switching Timing www.vishay.com 6 Document Number 83725 Rev. 1.4, 26-Jan-05 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Package Dimensions in Inches (mm) For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section. For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimensions in the Package Section. DIL300-6 Package Dimensions 14770 DIP-6 Package Dimensions 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Document Number 83725 Rev. 1.4, 26-Jan-05 www.vishay.com 7 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) www.vishay.com 8 .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 Document Number 83725 Rev. 1.4, 26-Jan-05 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83725 Rev. 1.4, 26-Jan-05 www.vishay.com 9