FAIRCHILD 4N32SVM

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
General Purpose 6-Pin Photodarlington Optocoupler
Features
Description
■ High sensitivity to low input drive current
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and
TIL113M have a gallium arsenide infrared emitter
optically coupled to a silicon planar photodarlington.
■ Meets or exceeds all JEDEC Registered
Specifications
tm
■ UL, C-UL approved
■ VDE 0884 approval available as a test option
– add option V (e.g., 4N29VM)
Applications
■ Low power logic circuits
■ Telecommunications equipment
■ Portable electronics
■ Solid state relays
■ Interfacing coupling systems of different potentials
and impedances
Packages
Schematic
6
1
6
ANODE 1
6 BASE
1
CATHODE 2
5 COLLECTOR
6
1
N/C 3
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
4 EMITTER
www.fairchildsemi.com
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
May 2007
Symbol
Parameter
Value
Units
-40 to +150
°C
TOTAL DEVICE
TSTG
Storage Temperature
TOPR
Operating Temperature
TSOL
Lead Solder Temperature (Wave)
PD
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
-40 to +100
°C
260 for 10 sec
°C
250
mW
3.3
mW/°C
EMITTER
IF
Continuous Forward Current
80
mA
VR
Reverse Voltage
3
V
IF(pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3.0
A
LED Power Dissipation @ TA = 25°C
150
mW
2.0
mW/°C
Collector-Emitter Breakdown Voltage
30
V
BVCBO
Collector-Base Breakdown Voltage
30
V
BVECO
Emitter-Collector Breakdown Voltage
5
V
150
mW
2.0
mW/°C
150
mA
PD
Derate above 25°C
DETECTOR
BVCEO
PD
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
IC
Continuous Collector Current
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
2
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
1.2
1.5
V
1.2
1.5
EMITTER
VF
Input Forward Voltage*
IF = 10mA
4NXXM
H11B1M,
TIL113M
IR
C
Reverse Leakage Current*
Capacitance*
0.8
VR = 3.0V
4NXXM
0.001
100
VR = 6.0V
H11B1M,
TIL113M
0.001
10
All
150
pF
V
VF = 0V, f = 1.0MHz
µA
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0
BVCBO
Collector-Base Breakdown Voltage*
BVECO
Emitter-Collector Breakdown Voltage* IE = 100µA, IB = 0
ICEO
Collector-Emitter Dark Current*
IC = 100µA, IE = 0
VCE = 10V, Base Open
4NXXM,
TIL113M
30
60
H11B1M
25
60
All
30
100
V
4NXXM
5.0
10
V
H11B1M,
TIL113M
7
10
All
1
100
nA
Max.
Unit
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
4N32M,
4N33M
50 (500)
4N29M,
4N30M
10 (100)
Typ.
DC CHARACTERISTICS
IC(CTR)
VCE(SAT)
Collector Output Current*(1, 2)
Saturation Voltage*(2)
IF = 10mA, VCE = 10V,
IB = 0
IF = 1mA, VCE = 5V
H11B1M
5 (500)
IF = 10mA, VCE = 1V
TIL113M
30 (300)
IF = 8mA, IC = 2.0mA
mA (%)
4NXXM
1.0
TIL113M
1.25
V
IF = 1mA, IC = 1mA
H11B1M
1.0
IF = 200mA, IC = 50mA,
VCC = 10V, RL = 100Ω
4NXXM,
TIL113M
5.0
µS
IF = 10mA, VCE = 10V,
RL = 100Ω
H11B1M
IF = 200mA, IC = 50mA,
VCC = 10V, RL = 100Ω
4N32M,
4N33M,
TIL113M
100
µS
4N29M,
4N30M
40
AC CHARACTERISTICS
ton
toff
Turn-on Time
Turn-off Time
IF = 10mA, VCE = 10V,
RL = 100Ω
BW
18
30
Bandwidth(3, 4)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
H11B1M
25
kHz
www.fairchildsemi.com
3
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Symbol
VISO
Characteristic
Test Conditions
Input-Output Isolation Voltage(5) II-O ≤ 1µA, Vrms, t = 1sec.
VDC
VDC
RISO
CISO
Isolation Resistance(5)
Isolation Capacitance
(5)
Device
Min.
All
7500
Vac(peak)
4N32M*
2500
V
4N33M*
1500
VI-O = 500VDC
All
1011
VI-O = Ø, f = 1MHz
All
Typ.
Max.
Units
Ω
0.8
pF
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current.
2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .
3. IF adjusted to IC = 2.0mA and IC = 0.7mA rms.
4. The frequency at which IC is 3dB down from the 1kHz value.
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
4
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics (TA = 25°C Unless otherwise specified.) (Continued)
Isolation Characteristics
Fig. 2 Normalized CTR vs. Forward Current
1.6
1.7
1.4
1.6
1.2
NORMALIZED CTR
VF - FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.5
1.4
TA = -55°C
1.3
TA = 25°C
VCE = 5.0V
TA = 25°C
Normalized to
IF = 10 mA
1.0
0.8
0.6
1.2
0.4
TA = 100°C
1.1
0.2
1.0
0.0
1
10
0
100
2
4
6
IF - LED FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
10
12
14
16
18
20
Fig. 4 CTR vs. RBE (Unsaturated)
1.4
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1.0
1.2
IF = 5 mA
NORMALIZED CTR
8
IF - FORWARD CURRENT (mA)
1.0
IF = 10 mA
0.8
IF = 20 mA
0.6
Normalized to
IF = 10 mA
TA = 25°C
0.4
0.9
IF = 20 mA
0.8
IF = 10 mA
0.7
IF = 5 mA
0.6
0.5
0.4
0.3
0.2
VCE= 5.0 V
0.1
0.0
0.2
-60
-40
-20
0
20
40
60
80
100
10
100
TA - AMBIENT TEMPERATURE (°C)
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 CTR vs. RBE (Saturated)
100
1.0
0.9
VCE= 0.3 V
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1000
RBE- BASE RESISTANCE (kΩ)
0.8
IF = 20 mA
0.7
0.6
IF = 10 mA
0.5
0.4
0.3
IF = 5 mA
0.2
TA = 25˚C
10
1
IF = 2.5 mA
0.1
IF = 20 mA
0.01
IF = 5 mA
0.1
0.001
0.01
0.0
10
100
1000
RBE- BASE RESISTANCE (k Ω)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
IF = 10 mA
0.1
1
10
IC - COLLECTOR CURRENT (mA)
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5
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized ton vs. RBE
1000
5.0
NORMALIZED ton - (ton(RBE) / ton(open))
SWITCHING SPEED - (µs)
IF = 10 mA
VCC = 10 V
TA = 25°C
100
Toff
10
Tf
Ton
1
Tr
0.1
0.1
4.5
VCC = 10 V
IC = 2 mA
RL = 100 Ω
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
10
100
10
100
10000
100000
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized toff vs. RBE
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
1.4
1.3
NORMALIZED toff - (toff(RBE) / toff(open))
1000
RBE- BASE RESISTANCE (k Ω)
R-LOAD RESISTOR (kΩ)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VCC = 10 V
IC = 2 mA
RL = 100 Ω
0.5
0.4
0.3
0.2
10000
VCE = 10 V
TA = 25°C
1000
100
10
1
0.1
0.01
0.001
0.1
10
100
1000
10000
0
100000
20
RBE- BASE RESISTANCE (k Ω)
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
ton
tf
toff
Adjust IF to produce IC = 2 mA
Figure 11. Switching Time Test Circuit and Waveforms
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
6
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves (Continued)
Through Hole
Surface Mount
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
Pin 1 ID
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.390 (9.90)
0.332 (8.43)
0.070 (1.77)
0.040 (1.02)
SEATING PLANE
SEATING PLANE
0.260 (6.60)
0.240 (6.10)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.025 (0.63)
0.020 (0.51)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41)
0.100 (2.54)
0.100 [2.54]
0.035 (0.88)
0.006 (0.16)
0.020 (0.50)
0.016 (0.41)
15°
0.012 (0.30)
0.4" Lead Spacing
Recommended Pay Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
0.070 (1.78)
0.260 (6.60)
0.240 (6.10)
0.060 (1.52)
SEATING PLANE
0.070 (1.77)
0.040 (1.02)
0.415 (10.54)
0.014 (0.36)
0.010 (0.25)
0.100 (2.54)
0.295 (7.49)
0.030 (0.76)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41)
0.012 (0.30)
0.008 (0.21)
0.100 [2.54]
0.425 (10.80)
0.400 (10.16)
Note:
All dimensions are in inches (millimeters).
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
7
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Package Dimensions
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Ordering Information
Suffix
Example
Option
No Suffix
4N32M
S
4N32SM
SR2
4N32SR2M
T
4N32TM
0.4" Lead Spacing
V
4N32VM
VDE 0884
TV
4N32TVM
VDE 0884, 0.4" Lead Spacing
SV
4N32SVM
VDE 0884, Surface Mount
SR2V
4N32SR2VM
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and reel
VDE 0884, Surface Mount, Tape & Reel
Marking Information
1
V
3
4N29
2
X YY Q
6
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘7’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
8
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
Ø1.5 MIN
4.0 ± 0.1
0.30 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
24.0 ± 0.3
User Direction of Feed
Note:
All dimensions are in millimeters.
Reflow Soldering Profile
300
280
260
240
220
200
180
160
°C 140
120
100
80
60
40
20
0
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
1.822°C/Sec Ramp up rate
33 Sec
0
60
120
180
270
360
Time (s)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
9
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Tape Dimensions
®
ACEx
Across the board. Around the world.™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
DOME™
2
E CMOS™
®
EcoSPARK
EnSigna™
FACT Quiet Series™
®
FACT
®
FAST
FASTr™
FPS™
®
FRFET
GlobalOptoisolator™
GTO™
Power-SPM™
®
PowerTrench
Programmable Active Droop™
®
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
ScalarPump™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
®
The Power Franchise
HiSeC™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
MICROCOUPLER™
MicroPak™
MICROWIRE™
Motion-SPM™
MSX™
MSXPro™
OCX™
OCXPro™
®
OPTOLOGIC
®
OPTOPLANAR
PACMAN™
PDP-SPM™
POP™
®
Power220
®
Power247
PowerEdge™
PowerSaver™
TinyBuck™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyWire™
TruTranslation™
µSerDes™
®
UHC
UniFET™
VCX™
Wire™
™
TinyBoost™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I27
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
10
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
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