Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Figure 1. AGR21045EF (flanged) Package Features Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 – 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 – 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: — Output power: 10 W. — Power gain: 14.5 dB. — Efficiency: 26%. — IM3: –33 dBc. — ACPR: –37 dBc. — Return loss: –12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 45 W continuous wave (CW) output power. Large signal impedance parameters available. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 1.5 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS –0.5, 15 Total Dissipation at TC = 25 °C PD 117 Derate Above 25 °C — 0.67 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG –65, 150 Unit Vdc Vdc W W/°C °C °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR21045EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Data Sheet Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Symbol Min Typ Max V(BR)DSS 65 — — IDSS — Unit Off Characteristics = 200µA 50 µA) Drain-source Breakdown Voltage (VGS = 0, ID = Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) — Vdc — — 2 75 5 µAdc — 3.2 — S 3.0 3.8 µAdc On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.5 A) GFS Gate Threshold Voltage (VDS = 10 V, ID = 150 µA) VGS(TH) 2.8 Drain-source On-voltage (VGS = 10 V, ID = 0.5 A) VDS(ON) — Gate Quiescent Voltage (VDS = 28 V, ID = 400 mA) VGS(Q) 3.4 4.8 Vdc 0.22 — Vdc 4.6 Vdc Table 5. RF Characteristics Parameter Symbol Min Typ Max Unit — 1.0 — pF 13.5 14.5 — dB — –33 –32 dBc Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) CRSS Test Fixture) Functional Tests (in Supplied Agere Systems Supplied Test Fixture) Common-source Amplifier Power Gain* Drain Efficiency* Third-order Intermodulation Distortion* (IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz) GPS η IM3 24 26 — % Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz and f2 + 5 MHz) ACPR — –37 –35 dBc Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2140.0 MHz) IRL P1dB — –12 –9 dB Input Return Loss* Output Mismatch Stress (VDD = 28 V, POUT = 45 W (CW), IDQ = 400 mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles]) ψ 42 47 — W No degradation in output power. * 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 400 mA, and POUT = 10 W avg. Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR21045EF FB1 VGG R1 + C4 C2 C3 Z1 RF INPUT C1 Z2 VDD PINS: 1. DRAIN 2. GATE 3. SOURCE Z5 Z3 Z4 2 DUT 1 + Z10 Z6 Z7 3 C6 Z8 C7 C8 C9 C10 C5 Z9 RF OUTPUT A. Schematic Parts List: ■ Microstrip line: Z1 0.780 in. x 0.066 in.; Z2 0.225 in. x 0.090 in.; Z3 0.360 in. x 0.090 in.; Z4 0.320 in. x 0.520 in.; Z5 0.050 in. x 0.430 in.; Z6 0.335 in. x 0.330 in.; Z7 0.215 in. x 0.330 in.; Z8 0.450 in. x 0.066 in.; Z9 0.685 in. x 0.066 in.; Z10 0.050 x 0.715 in. ® ■ ATC chip capacitor: C1, C5: 8.2 pF 100B8R2JW500X; C2, C6 6.8 pF 100B6R8JW500X. ® ■ Kemet capacitor: C8 0.01 µF C1206104K5RAC7800; C9 0.1 µF GRM40X7R103K100AL. ® ■ Vitramon 1206 capacitor: C3, C7: 22,000 pF. ® ■ Sprague tantalum capacitor: C4, C10: 22 µF, 35 V. ® ■ Fair-Rite ferrite bead: FB1 2743019447. ■ 1206 size chip resistor: R1 12 Ω. ® ■ Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. B. Component Layout Figure 2. AGR21045EF Test Circuit AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Data Sheet U CT 8 0. IN D 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 ECTI ON COEFFI CI E 0.27 N L T F E I N R D EGRE L E OF ES ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG 0.6 10 0.1 0.4 20 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 0.2 20 0.4 0.1 ) / Yo (-jB CE 1. 0 AN PT CE US ES IV CT DU IN ,O o) 0 0 1.0 0.9 1.2 0.14 -80 0.36 5 -90 0.13 0.37 -110 0.12 0.38 0.1 0.11 -100 9 0.0 0 -12 40 -70 -1 06 (-j 5 0. T 0. 2. 1.8 1.6 0.7 1.4 0.15 0.35 0 -4 -4 4 -70 -5 6 0.8 5 -3 0.1 0.3 5 3 -60 -5 0.3 7 VE -60 0.1 CA P AC I TI 0.6 32 -75 R 0.2 -30 CE CO M EN -65 18 RE AC TA N PO N 5 0.0 Z X/ 0. 0. 0.4 0. 0 -5 -25 31 0. 44 0.6 0 -20 0 0.8 6 0.4 4 0.0 0 -15 4.0 3. 0.3 .45 0 1. -15 0.2 0. 07 30 -1 43 0. 8 0.0 2 0.4 .41 0 0.4 0.39 2110 (f1) 2140 (f2) 2170 (f3) f1 19 MHz (f) ZS 0. Z0 = 10 Ω f2 0 -4 4 0. -30 ZL ZL Ω ZS Ω (Complex Source Impedance) (Complex Optimum Load Impedance) 3.26 – j9.91 5.66 – j6.84 3.20 – j9.64 5.49 – j6.61 3.13 – j9.41 5.31 – j6.40 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances 0.2 8 f1 0.2 9 0.2 1 0.3 f3 0.2 2 -80 8 0. 5.0 0.2 -10 -85 10 0.6 -20 0.0 Ð > W A V EL E 0.49 N GTH S TOW A RD 0.48 0.0 D <Ð 0.49 RD L OA TOW A 0.48 7 S 180 ± H .4 0 170 70 N GT -1 E L VE WA <Ð -90 90 -160 Typical Performance Characteristics Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 16.0 15.5 POWER GAIN (dB) S 15.0 IDQ = 500 mA IDQ = 450 mA IDQ = 400 mA 14.5 14.0 13.5 13.0 IDQ = 350 mA 12.5 IDQ = 300 12.0 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz TWO-TONE MEASUREMENT 10 MHz TONE SPACING 11.5 11.0 0.10 1.00 10.00 100.00 OUTPUT POWER (W) PEP Figure 4. Two-Tone Power Gain vs. Output Power and IDQ -20.0 IMD3, THIRD ORDER (dBc) -25.0 -30.0 -35.0 -40.0 -45.0 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz IDQ = 300 mA IDQ = 350 mA TWO-TONE MEASUREMENT 10 MHz TONE SPACING -50.0 -55.0 -60.0 -65.0 0.10 IDQ = 500 mA IDQ = 400 mA 1.00 IDQ = 450 mA 10.00 OUTPUT POWER (W) PEP Figure 5. IMD3 vs. Output Power and IDQ 100.00 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Data Sheet Typical Performance Characteristics (continued) 0.0 -5.0 -10.0 VDD = 28 V, POUT = 45 W PEP, Fo = 2140 MHz -15.0 IMD (dBc)Z -20.0 -25.0 IM3 -30.0 IM5 -35.0 -40.0 IM7 -45.0 -50.0 -55.0 -60.0 0.1 1 10 100 TWO-TONE SPACING (MHz)Z 20.00 DRAIN EFFICIENCY 18.00 16.00 GAIN GAIN (dB)Z 14.00 12.00 2 CARRIER W-CDMA 3GPP, PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF 10 MHz SPACING, 3.84 MHz CBW, FC = 2140 MHz, VDD = 28 V, IDQ = 400 mA 10.00 8.00 6.00 IMD3 4.00 ACPR 2.00 0.00 0.00 5.00 10.00 15.00 20.00 OUTPUT POWER (WATTS-AVERAGE)Z Figure 7. Gain, Efficiency, IMD3, and ACPR vs. Output Power 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 -45.0 -50.0 -55.0 25.00 EFF (%), IMD3 (dBc), ACPR (dBc)Z Figure 6. IMD vs. Tone Spacing Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET 20.00 18.00 EFFICIENCY 16.00 GAIN (dB)Z 14.00 GAIN 12.00 2 CARRIER W-CDMA 3GPP, PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF 10 MHz SPACING, 3.84 MHz CBW, POUT = 10 W, VDD = 28 V, IDQ = 400 mA 10.00 8.00 RL 6.00 4.00 IMD3 2.00 ACPR 0.00 2100 2110 2120 2130 2140 2150 2160 2170 50.0 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 -45.0 -50.0 2180 FREQUENCY (MHz)Z Figure 8. Broadband Performance +5 F1 F2 -0 2 CARRIER W-CDMA 3GPP PEAK-TO-AVG = 8.5 dB @ 0.01% CCDF 10 MHz SPACING 3.84 MHz CBW POUT = 10 W VDD = 28 V IDQ = 400 mA -5 -10 -15 -20 -25 -30 IMD3 IMD3 -35 -40 -45 ACPR ACPR CENTER 2.140 GHz SPAN 50 MHz Figure 9. Spectral Plot EFF (%), RL (dB), IMD3 (dBc), ACPR (dBc)Z Typical Performance Characteristics (continued) AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Data Sheet Typical Performance Characteristics (continued) 4.0 15.0 AM to AM (POWER GAIN [dB]) 14.0 2.0 0.0 13.0 12.0 11.0 10.0 -4.0 AM to PM (PHASE [DEGREES]) -6.0 -8.0 -10.0 VDD = 28 Vdc FO = 2140 MHz IDQ = 400 mA CW INPUT -12.0 -14.0 -16.0 -18.0 9.0 10.0 15.0 20.0 25.0 30.0 35.0 PIN (dBm)Z Figure 10. AM-AM and AM-PM Characteristics -20.0 40.0 PHASE (DEGREES)Z POWER GAIN (dB)Z -2.0 Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR21045EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 1 PEAK DEVICES AAGR21045XF GR21045F YYWWLL XXXXX YYWW LL ZZZZZZZ ZZZZZZZ 3 2 3 2 Label Notes: ■ M before the part number denotes model program. X before the part number denotes engineering prototype. ■ ■ ■ ■ The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.