AO4618 40V Complementary MOSFET General Description The AO4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter application Features N-Channel VDS= 40V P-Channel -40V ID= 8A (VGS=10V) -7A (VGS=-10V) RDS(ON) RDS(ON) < 19mΩ (VGS=10V) < 23mΩ (VGS=-10V) < 27mΩ (VGS=4.5V) < 30mΩ (VGS=-4.5V) s. D2 D1 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S1 S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 40 VGS Gate-Source Voltage TA=25°C Continuous Drain Current ID TA=70°C Max p-channel -40 Units V ±20 ±20 V 8 -7 A 6 -5.5 IDM 40 -35 Avalanche Current C IAS 15 -35 A Avalanche energy L=0.1mH C TA=25°C EAS 11 61 mJ Pulsed Drain Current Power Dissipation B C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/9 p-channel Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4618 40V Complementary MOSFET N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 40 TJ=55°C 5 ±100 nA 2.4 V 15.4 19 23.5 29 VGS=4.5V, ID=4A 21 27 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=8A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.9 VGS=10V, ID=8A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz mΩ mΩ S 1 V 2.5 A 422 pF 109 pF 11 pF 2.2 3.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6.4 9 nC Qg(4.5V) Total Gate Charge 3.0 nC 1.2 nC 0.8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=8A VGS=10V, VDS=20V, RL=2.5Ω, RGEN=3Ω 1 4.5 ns 2 ns 16 ns tf Turn-Off Fall Time 2.4 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 7.3 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 11 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/9 www.freescale.net.cn AO4618 40V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 VDS=5V 4.5V 25 16 10V 3.5V 20 ID(A) ID (A) 12 15 8 10 125°C 3V 4 5 25°C VGS=2.5V 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 30 VGS=4.5V 25 RDS(ON) (mΩ Ω) 1 20 15 VGS=10V 10 VGS=10V ID=8A 1.6 1.4 17 5 VGS=4.5V 2 ID=4A 10 1.2 1 0.8 0 3 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 50 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=8A 45 1.0E+01 40 1.0E+00 35 30 125°C IS (A) RDS(ON) (mΩ Ω) 40 1.0E-01 125°C 1.0E-02 25 25°C 1.0E-03 20 15 1.0E-04 25°C 10 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/9 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4618 40V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=20V ID=8A 400 Ciss Capacitance (pF) VGS (Volts) 8 6 4 300 200 Coss 2 100 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 8 100.0 Crss 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 Power (W) ID (Amps) 10.0 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 4/9 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.freescale.net.cn AO4618 40V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 5/9 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn AO4618 40V Complementary MOSFET P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-40V, VGS=0V -40 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-7A RDS(ON) -1.7 Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA -3 V 19 23 28 34 24 30 mΩ -1 V -2.5 A A 26 -0.74 DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=-20V, f=1MHz µA -1.9 -35 VGS=-4.5V, ID=-4A VDS=-5V, ID=-7A IS=-1A,VGS=0V Units V -5 TJ=125°C Static Drain-Source On-Resistance Max -1 TJ=55°C gFS Coss Typ mΩ S 1870 pF 185 pF 155 pF 4.5 6.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 32 45 nC Qg(4.5V) Total Gate Charge 8 nC 7.6 nC 6.2 nC 10 ns 18 ns 38 ns 24 ns ns nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=-20V, ID=-7A 2.2 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-7A, dI/dt=500A/µs 13 Qrr Body Diode Reverse Recovery Charge IF=-7A, dI/dt=500A/µs 33 Body Diode Reverse Recovery Time VGS=10V, VDS=-20V, RL=3Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 6/9 www.freescale.net.cn AO4618 40V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 50 -10V VDS=-5V -4.5V -7V 40 30 -3.5V -ID(A) -ID (A) 30 20 20 125°C 10 10 25°C VGS=-3V 0 0 0 1 2 3 4 0 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 40 Normalized On-Resistance 1.8 35 RDS(ON) (mΩ Ω) 1 30 VGS=-4.5V 25 VGS=-10V 20 15 10 VGS=-10V ID=-7A 1.6 1.4 17 5 2 VGS=-4.5V 10 ID=-4A 1.2 1 0.8 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 60 ID=-7A 1.0E+01 50 40 125°C 40 125°C 30 -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 20 1.0E-04 10 1.0E-05 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 7/9 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4618 40V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-7A 2500 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2000 1500 1000 Coss 2 500 0 0 Crss 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 0 35 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C Power (W) -ID (Amps) 10.0 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 8/9 www.freescale.net.cn AO4618 40V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 9/9 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn