AO4629 30V Complementary MOSFET General Description AO4629 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. Features N-Channel VDS= 30V P-Channel -30V ID= 6A (VGS=10V) -5.5A (VGS=-10V) RDS(ON) RDS(ON) < 30mΩ (VGS=10V) < 41mΩ (VGS=-10V) < 42mΩ (VGS=4.5V) < 74mΩ (VGS=-4.5V) D2 D1 Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G2 G1 S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C Max p-channel -30 Units V ±20 ±20 V 6 -5.5 5 -4.5 A IDM 30 -25 Avalanche Current C IAS, IAR 10 17 A Avalanche energy L=0.1mH C EAS, EAR 5 14 mJ TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/9 S1 p-channel Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4629 30V Complementary MOSFET N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V uses Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 30 TJ=55°C 5 VGS=10V, ID=6A 100 nA 2.4 V 25 30 40 48 42 mΩ 1 V 2.5 A 310 pF A Static Drain-Source On-Resistance VGS=4.5V, ID=5A 33 gFS Forward Transconductance VDS=5V, ID=6A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ S 45 1.6 µA 1.8 RDS(ON) TJ=125°C Units V 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ pF 35 50 pF 3.25 4.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4 5.2 6.3 nC Qg(4.5V) Total Gate Charge 2 2.55 3.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=6A 0.85 nC 1.3 nC 4.5 ns 2.5 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 8.5 12 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 2.2 3 VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 14.5 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/9 www.freescale.net.cn AO4629 30V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 10V VDS=5V 25 4.5V 6V 4V 9 ID(A) ID (A) 20 12 15 3.5V 6 125°C 10 3 5 25°C VGS=3V 0 0 0 1 2 3 4 5 0.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ Ω) 2 2.5 3 3.5 4 4.5 2 40 35 30 25 VGS=10V 20 15 VGS=10V ID=6A 1.8 1.6 17 5 2 VGS=4.5V 10 I =5A 1.4 1.2 D 1 0.8 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 100 ID=6A 1.0E+01 40 80 1.0E+00 60 125°C IS (A) RDS(ON) (mΩ Ω) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 45 1.0E-01 125°C 25°C 1.0E-02 1.0E-03 40 25°C 1.0E-04 20 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/9 1 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4629 30V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=15V ID=6A 400 Ciss Capacitance (pF) VGS (Volts) 8 6 4 300 200 Coss 2 100 0 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 0 6 100.0 Crss 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs RDS(ON) limited 100 100µs 1ms 1.0 10ms 0.1 TJ(Max)=150°C TA=25°C Power (W) ID (Amps) 10.0 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 4/9 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.freescale.net.cn AO4629 30V Complementary MOSFET Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/9 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn AO4629 30V Complementary MOSFET P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current uses Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-5.5A ID(ON) -1.5 gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 100 nA -2.5 V 32 41 47 58 51 74 -0.76 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A 13 DYNAMIC PARAMETERS Ciss Input Capacitance mΩ mΩ S -1 V -2.5 A 520 pF 100 pF 65 pF Ω 7.5 11.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 11 nC Qg(4.5V) Total Gate Charge 4.6 6 nC VGS=-10V, VDS=-15V, ID=-5.5A 3.5 µA -2 -25 VGS=-4.5V, ID=-4.5A VDS=-5V, ID=-5.5A IS=-1A,VGS=0V Units V -5 TJ=125°C Static Drain-Source On-Resistance Max -1 TJ=55°C RDS(ON) Coss Typ Qgs Gate Source Charge 1.6 nC Qgd Gate Drain Charge 2.2 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 5.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω 19 ns 7 ns IF=-5.5A, dI/dt=500A/µs 11 Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/µs 5.3 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 6/9 www.freescale.net.cn AO4629 30V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 -10V -5V -8V 20 VDS=-5V 25 -4.5V 20 -ID(A) -ID (A) 15 -4V 15 10 10 5 VGS=-3.5V 125°C 5 25°C 0 0 0 1 2 3 4 5 0.5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 80 Normalized On-Resistance 1.8 70 VGS=-4.5V 60 RDS(ON) (mΩ Ω) 1 50 40 30 VGS=-10V 20 10 VGS=-10V ID=-5.5A 1.6 1.4 17 5 2 10 VGS=-4.5V 1.2 1 ID=-4.5A 0.8 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 120 ID=-5.5A 1.0E+01 100 40 80 -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 60 125°C 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 40 1.0E-04 25°C 20 1.0E-05 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 7/9 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4629 30V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=-15V ID=-5.5A 700 Ciss 600 Capacitance (pF) -VGS (Volts) 8 6 4 500 400 300 Coss 200 2 100 Crss 0 0 0 2 4 g (nC) 6 8 Q Figure 7: Gate-Charge Characteristics 0 10 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) 100µs 1ms 1.0 10ms 0.1 TJ(Max)=150°C TA=25°C 100 Power (W) -ID (Amps) 10.0 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 8/9 www.freescale.net.cn AO4629 30V Complementary MOSFET Gate Charge Test Circuit & W aveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds t off ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 9/9 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn