AO4930 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AO4930 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4930 is Pb-free (meets ROHS & Sony 259 specifications). FET1 VDS (V) = 30V ID = 9.5A RDS(ON) < 13.5mΩ RDS(ON) < 16mΩ SOIC-8 FET2 V DS(V) = 30V I D=9A (V GS = 10V) <15.8mΩ (V GS = 10V) <23mΩ (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested TM SRFET Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Max FET1 Parameter VDS 30 Drain-Source Voltage VGS Gate-Source Voltage ±12 Continuous Drain Current A Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B TA=25°C A Power Dissipation Junction and Storage Temperature Range V 9.0 7.6 7.2 40 40 IAR 20 16 A EAR 60 38 mJ 2 2 1.3 1.3 -55 to 150 -55 to 150 TJ, TSTG Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Thermal Characteristics FET2 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. ±20 9.5 PDSM TA=70°C Units V IDSM IDM TA=25°C TA=70°C Max FET2 30 Symbol RθJA RθJL Symbol RθJA RθJL A W °C Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W AO4930 FET1 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 VDS=24V, V GS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=4.5V, VDS=5V 40 TJ=125°C 16 78 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 0.38 1980 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=9.5A V mΩ mΩ S 0.5 V 5 A 2376 pF 317 pF 111 VGS=0V, VDS=0V, f=1MHz µA A 13.2 TJ=125°C mA 2.4 VDS=5V, ID=9.5A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Gate resistance 1.8 VGS=4.5V, ID=7A VSD Rg 20 21 Forward Transconductance Crss 0.1 6 16.8 gFS Output Capacitance 0.01 13.5 Static Drain-Source On-Resistance Units V 11.2 RDS(ON) Coss Max 0.1 VGS=10V, ID=9.5A IS Typ pF 1.3 2.0 33 43 Ω 15.0 nC 5.3 nC Qgd Gate Drain Charge 6.0 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=9.5A, dI/dt=300A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=9.5A, dI/dt=300A/µs 7 VGS=10V, V DS=15V, R L=1.6Ω, RGEN=3Ω 5.5 ns 27.0 ns 4.3 ns 13 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0:Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4930 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 20 60 ID(A) ID (A) 4.5V 15 40 10 VGS=3.5V 20 5 0 125° 25°C 0 0 DYNAMIC 1 2 3 4 1 5 1.5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 16 Normalized On-Resistance 2 VGS=4.5V 14 RDS(ON) (mΩ) VDS=5V 25 6V 12 VGS=10V 10 VGS=10V ID=9.5A 1.8 1.6 VGS=4.5V 1.4 ID=7A 1.2 1 8 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+02 1.0E+01 ID=9.5A 25 125°C 1.0E+00 125°C 20 IS (A) RDS(ON) (mΩ) 30 15 25°C 1.0E-01 1.0E-02 1.0E-03 10 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4930 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 2500 VDS=15V ID=9.5A 6 Capacitance (pF) VGS (Volts) 8 4 Ciss 2000 1500 1000 Crss 2 500 0 0 5 10 15 20 25 30 35 Coss 0 40 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 100.0 70 1ms 1.0 10s 1s DC 0.1 60 50 40 30 TJ(Max)=150°C TA=25°C 20 10 0.0 0.01 0.1 1 VDS (Volts) 10 0 0.0001 100 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance TJ(Max)=150°C TA=25°C 80 10ms Power (W) ID (Amps) 90 100µs RDS(ON) limited 30 100 10µs 10.0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4930 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 VDS=24V 0.7 1.0E-03 VSD(V) IR (A) 20A 0.8 VDS=12V 1.0E-04 0.6 0.5 10A 0.4 5A 0.3 1.0E-05 0.2 IS=1A 0.1 1.0E-06 0 DYNAMIC 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 25 8 20 2.5 Irm 25ºC trr (ns) 4 Irm (A) 125ºC 2 5 di/dt=800A/us 12 25ºC Qrr 10 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 15 6 15 50 125ºC di/dt=800A/us Qrr (nC) 0 2 125ºC 9 1.5 trr S 0 25ºC 6 1 25ºC S 3 0.5 125ºC 0 0 0 5 10 15 20 25 10 125ºC 7 6 5 125º 10 5 Qrr 0 Irm 0 200 25ºC 400 600 800 4 3 2 25 30 2.5 25ºC 2 9 3 0 1000 0 1.5 trr 25ºC 6 1 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 20 Is=20A 125ºC 12 trr (ns) 25ºC 15 15 3 15 8 Is=20A 10 18 9 Irm (A) Qrr (nC) 20 5 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 0 0 30 1 0 200 0.5 S 125ºC 400 600 800 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt S 0 AO4930 FET2 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, V DS=5V 40 TJ=55°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=7A VDS=5V, ID=9A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 5 100 VGS=10V, ID=9A RDS(ON) Max 1.7 VGS=10V, V DS=15V, ID=9A 13 15.8 18 22 18.6 V 23 mΩ mΩ 23 0.75 S 1 V 3 A 1250 pF 145 pF pF 0.5 0.85 Ω 17 24 nC 9 12 3.4 nC nC Qgd Gate Drain Charge 4.7 tD(on) Turn-On DelayTime 5 6.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, V DS=15V, R L=1.7Ω, RGEN=3Ω nA 2.3 112 VGS=0V, VDS=0V, f=1MHz µA A 955 VGS=0V, VDS=15V, f=1MHz Units V VDS=24V, V GS=0V IDSS IS Typ nC ns 6 7.5 ns 19 25 ns 4.5 6 ns IF=9A, dI/dt=100A/µs 16.7 21 IF=9A, dI/dt=100A/µs 6.7 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0:Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4930 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 45 35 10V 4.5V 40 35 4V VDS=5V 28 21 25 ID(A) ID (A) 30 3.5V 20 125°C 14 15 13.4 VGS=3V 10 22 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Figure 1: On-Region Characteristics 26 30.76 3.5 2.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 25 1.6 ID=9A Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ) 16 25°C 7 20 15 VGS=10V VGS=10V 1.4 VGS=4.5V 1.2 ID=7A 1 10 0 5 10 15 20 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 ID=9A 30 1.0E-01 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4930 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=9A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 4 8 12 16 20 0 5 22 26 15 20 25 0.76 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10 30 100 10µs RDS(ON) limited 80 1ms 70 10ms 1.0 90 100µs Power (W) 10.0 ID (Amps) 16 Crss 0 0 10s DC 0.1 1s 0.1 50 40 20 10 1 VDS (Volts) 10 0 0.0001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150°C TA=25°C 60 30 TJ(Max)=150°C TA=25°C 0.0 0.01 ZθJA Normalized Transient Thermal Resistance 13.4 250 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000