AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON5802 is Pb-free (meets ROHS & Sony 259 specifications). AON5802L is a Green Product ordering option. AON5802 and AON5802L are electrically identical. Features VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Rating: 2000V HBM S2 D G2 S1 G1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain . Current RθJA=75°C/W TA=70°C C Pulsed Drain Current Power Dissipation RθJA=75°C/W A Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. 45 W 1.0 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 1.7 PDSM Junction and Storage Temperature Range V ±12 6 IDM TA=70°C Units 8 ID TA=25°C Maximum 30 RθJA RθJC Typ 30 61 4.5 °C Max 40 75 6 Units °C/W °C/W °C/W AON5802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V IGSS Gate-Body leakage current BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 0.6 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C 5 TJ=125°C Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 14 17 V A 20 VGS=4.0V, ID=4A 18 22 VGS=3.1V, ID=4A 20 24 VGS=2.5V, ID=3A 23 30 VDS=5V, ID=8A 37 DYNAMIC PARAMETERS Ciss Input Capacitance Crss V 28 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance 1.5 17 VSD Coss 1 23 Forward Transconductance IS µA VGS=4.5V, ID=6A gFS VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=8A 0.5 µA 10 VDS=0V, VGS=±10V VGS=10V, ID=8A Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ 0.76 mΩ S 0.9 V 4.5 A 869 pF 129 pF 104 pF 1.5 Ω 10.7 nC 2.1 nC nC Qgd Gate Drain Charge 4.3 tD(on) Turn-On DelayTime 3.4 ns tr Turn-On Rise Time 11.2 ns 27.2 ns 6.7 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs 24.6 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 12.9 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AON5802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 2.5V 3V 25 15 4V ID(A) 20 ID (A) VDS=5V 15 10 VGS=2V 10 125°C 5 5 25°C 0 0 0 1 2 3 4 0 5 0.5 40 VGS=2.5V Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 1.8 30 VGS=4.5V 20 VGS=10V 10 0 0 5 10 15 20 1.6 VGS=10V ID=8A VGS=4.5V ID=6A 1.4 VGS=2.5V ID=3A 1.2 1 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=8A 50 1.0E+00 40 1.0E-01 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 30 125°C 25°C 1.0E-02 1.0E-03 20 25°C 10 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AON5802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=8A 9 8 1400 Capacitance (pF) 7 VGS (Volts) 6 5 4 3 1000 800 600 2 400 1 200 0 0 4 8 12 16 20 Coss Crss 0 24 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 10µs ID (Amps) 100µs 1ms 1.0 10ms 100ms 1s 10s DC TJ(Max)=150°C, TA=25°C 0.1 0.1 1 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJA RθJA=75°C/W 120 80 40 0 0.0001 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150°C TA=25°C 160 Power (W) RDS(ON) limited 10.0 ZθJC Normalized Transient Thermal Resistance Ciss 1200 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000