AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3423 is Pb-free (meets ROHS & Sony 259 specifications). AO3423L is a Green Product ordering option. AO3423 and AO3423L are electrically identical. VDS (V) = -20V (V GS = -10V) ID = -2 A RDS(ON) < 92mΩ (VGS = -10V) RDS(ON) < 118mΩ (VGS = -4.5V) RDS(ON) < 166mΩ (VGS = -2.5V) ESD Rating: 2000V HBM D TO-236 (SOT-23) Top View G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A F TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 0.9 TJ, TSTG t ≤ 10s Steady-State Steady-State A 1.4 -55 to 150 Symbol A V -8 PD TA=70°C A ±12 -2 ID IDM TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V -2 TA=70°CF Pulsed Drain Current B Power Dissipation A Maximum -20 RθJA RθJL Typ 65 85 43 °C Max 90 125 60 Units °C/W °C/W °C/W AO3423 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -0.5 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.7 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -8 TJ=55°C -2.5 µA VDS=0V, VGS=±12V ±10 µA -1.4 V 92 108 VGS=-4.5V, ID=-2A 94 118 mΩ VGS=-2.5V, ID=-1A 128 166 mΩ VDS=-5V, ID=-2A 6.8 Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A 90 gFS Rg -0.9 76 TJ=125°C Static Drain-Source On-Resistance Crss µΑ ±1 RDS(ON) Output Capacitance Units VDS=0V, VGS=±10V VGS=-10V, ID=-2A Coss Max V VDS=-16V, VGS=0V IDSS IS Typ -1 mΩ S -0.78 512 V -1.8 A 620 pF VGS=0V, VDS=-10V, f=1MHz 77 VGS=0V, VDS=0V, f=1MHz 9.2 13 Ω 5.5 6.6 nC pF 62 VGS=-4.5V, VDS=-10V, ID=-2A pF 0.8 nC Qgd Gate Drain Charge 1.9 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time 6.7 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-2A, dI/dt=100A/µs 9.8 Qrr Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs 2.7 VGS=-10V, VDS=-10V, RL=5Ω, RGEN=3Ω 28 ns 13.5 ns 12 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The maximum current rating is limited by bond-wires. Rev 0 : Mar 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 12 10 -10.0V -4.0V VDS=-5V -3.5V -8.0V 8 -6.0V 6 -ID(A) -ID (A) -3.0V 9 -2.5V 6 -2.0V 3 4 125°C 2 25°C VGS=-1.5V 0 0 0 1 2 3 4 5 0 0.5 180 Normalized On-Resistance 140 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 1.6 VGS=-2.5V 160 VGS=-4.5V 120 100 80 VGS=-10V 60 40 ID=-2A, VGS=-4.5V ID=-2A, VGS=-10V 1.4 1.2 ID=-1A, VGS=-2.5V 1.0 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 200 ID=-2A 180 1E+00 125°C 160 1E-01 125°C 140 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 120 100 25°C 1E-02 1E-03 1E-04 80 25°C 1E-05 60 1E-06 40 0.0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 ID=-2A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 200 Coss Crss 0 0 0 1 2 3 4 5 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 40 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 100µs 30 Power (W) -ID (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10.0 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 10s 0.1s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 20 10 1s ZθJA Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000