AON6232 40V N-Channel MOSFET General Description Product Summary VDS The AON6232 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. ID (at VGS=10V) 40V 85A RDS(ON) (at VGS=10V) < 2.5mΩ RDS(ON) (at VGS = 4.5V) < 3.6mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current V A 260 22 IDSM TA=70°C ±20 67 IDM TA=25°C Units V 85 ID TC=100°C C Maximum 40 A 17 Avalanche Current C IAS, IAR 60 A Avalanche energy L=0.1mH C EAS, EAR 180 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: August 2011 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C -55 to 150 Typ 14 40 1.1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6232 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=40V, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 260 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime µA 5 IGSS Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VGS(th) RDS(ON) Typ 100 nA 1.8 2.3 V 2.05 2.5 3.2 3.9 2.8 3.6 mΩ 1 V 85 A A 100 0.68 mΩ S 2530 3165 3800 pF VGS=0V, VDS=20V, f=1MHz 630 905 1180 pF 15 52.5 90 pF VGS=0V, VDS=0V, f=1MHz 0.4 0.85 1.3 Ω VGS=10V, VDS=20V, ID=20A 33 42 51 nC 12 18.2 24 nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 9.6 nC 2.8 nC 8.7 ns 4.5 ns 33.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 15 22.5 30 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 41 59 77 6.2 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: August 2011 www.aosmd.com Page 2 of 6 AON6232 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 100 4.5V VDS=5V 3.5V 6V 100 80 80 ID(A) ID (A) 60 60 125°C 40 40 VGS=3V 20 20 25°C 0 0 0 1 2 3 4 0 5 6 2 3 4 5 6 1.8 4 Normalized On-Resistance RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 2 VGS=10V VGS=10V ID=20A 1.6 1.4 17 5 2 10 VGS=4.5V 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 8 ID=20A 1.0E+01 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 6 4 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 2 1.0E-04 25°C 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: August 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6232 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=20V ID=20A 3500 8 Capacitance (pF) VGS (Volts) 3000 6 4 Ciss 2500 2000 Coss 1500 1000 2 Crss 500 0 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 45 0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 200 1000.0 RDS(ON) 100.0 TJ(Max)=150°C TC=25°C 160 10µs 10.0 DC 1.0 100µs 1ms 10ms TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 10µs 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 40 RθJC=1.5°C/W PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: August 2011 www.aosmd.com Page 4 of 6 AON6232 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C 100 TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=150°C TA=125°C 10 1 60 40 20 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 100 TA=25°C 80 1000 Power (W) Current rating ID(A) 80 60 40 17 5 2 10 100 10 20 1 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 150 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: August 2011 www.aosmd.com Page 5 of 6 AON6232 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: August 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6