AON6290 100V N-Channel MOSFET General Description Product Summary VDS The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100V 85A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4.6mΩ RDS(ON) (at VGS=6V) < 6.2mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: July 2012 IAS 60 A EAS 180 mJ 208 Steady-State Steady-State W 83 7.3 RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s A 23 PDSM TA=70°C A 28 PD TC=100°C V 260 IDSM TA=70°C ±20 67 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 100 -55 to 150 Typ 14 40 0.3 www.aosmd.com °C Max 17 55 0.6 Units °C/W °C/W °C/W Page 1 of 6 AON6290 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 260 TJ=55°C ±100 nA 2.8 3.4 V 3.8 4.6 6.5 7.9 VGS=6V, ID=20A 4.7 6.2 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 70 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units µA 5 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz 0.3 mΩ S 1 V 85 A 4600 pF 415 pF 27 VGS=0V, VDS=0V, f=1MHz mΩ 0.75 pF 1.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 63 90 nC Qg(4.5V) Total Gate Charge 28.5 40 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=20A VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 17 nC 10 nC 14.5 ns 5.5 ns 37 ns tf Turn-Off Fall Time 7.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 40 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 230 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: July 2012 www.aosmd.com Page 2 of 6 AON6290 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V 5V 100 VDS=5V 6V 80 4.5V 80 ID(A) ID (A) 60 60 40 125°C 40 20 20 VGS=4.0V 25°C 0 0 0 1 2 3 4 1 5 8 3 4 5 6 Normalized On-Resistance 2 6 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=6V 4 VGS=10V 2 1.8 VGS=10V ID=20A 1.6 17 5 2 10 =6V 1.4 1.2 VGS ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 10 40 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 8 6 4 1.0E-01 125°C 1.0E-02 1.0E-03 25°C 25°C 2 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: July 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6290 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=50V ID=20A Capacitance (pF) VGS (Volts) 6 4 2 4000 3000 Coss 2000 1000 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 10.0 DC 100µs 1ms 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 800 10µs 10µs RDS(ON) limited Power (W) 100.0 17 5 2 10 600 400 200 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 0 10 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 20 1000 1000.0 ID (Amps) Crss 0 0 Zθ JC Normalized Transient Thermal Resistance Ciss 5000 8 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.6°C/W 1 0.1 Single Pulse PD Ton T 0.01 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: July 2012 www.aosmd.com Page 4 of 6 AON6290 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 100 TA=150°C TA=125°C 10 200 150 100 50 1 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 100 TA=25°C 80 1000 Power (W) Current rating ID(A) 250 60 40 17 5 2 10 100 10 20 1 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.01 0.1 1 10 0 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.0001 0.001 150 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: July 2012 www.aosmd.com Page 5 of 6 AON6290 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: July 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6