AON6407 30V P-Channel MOSFET General Description The AON6407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS -30 ID (at VGS= -10V) -85A RDS(ON) (at VGS= -10V) < 4.5mΩ RDS(ON) (at VGS = -6V) < 6.0mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current A -32 A -25.5 Avalanche Current C IAS 45 A Avalanche energy L=0.1mH C TC=25°C EAS 101 mJ Power Dissipation B Junction and Storage Temperature Range 7.3 Steady-State Steady-State RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C TA=25°C Power Dissipation A 1/6 V -67 IDSM TA=70°C ±25 -200 IDM TA=25°C Units V -85 ID TC=100°C C Maximum -30 -55 to 150 Typ 14 40 1.1 °C Max 17 55 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AON6407 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.6 ID(ON) On state drain current VGS=-10V, VDS=-5V -200 TJ=55°C nA V 3.3 4.5 4.9 6.5 VGS=-6V, ID=-20A 4.4 6 mΩ 65 -1 V -85 A TJ=125°C Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz Gate Source Charge Qgd A -0.69 VGS=-10V, VDS=-15V, ID=-20A mΩ S 3505 pF 900 pF 650 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA -2.6 gFS Crss -5 ±100 Static Drain-Source On-Resistance Output Capacitance Units -2.1 VGS=-10V, ID=-20A Coss Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ pF 4.6 9.2 Ω 75 105 nC 13 nC Gate Drain Charge 23 nC tD(on) Turn-On DelayTime 14 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Qrr VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 16 ns 94 ns Turn-Off Fall Time 75 ns IF=-20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 35 ns nC 75 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides IaASsingle pulse rating. G. The maximum current rating is package limited. EAS H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON6407 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 -5V VDS=-5V -4V 80 -10V 60 60 -ID(A) -ID (A) 80 -6V 40 125°C 40 -3.5V 20 20 25°C VGS=-3.0V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 1 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 7 Normalized On-Resistance 1.8 6 RDS(ON) (mΩ Ω) 2 VGS=-6V 5 4 3 VGS=-10V 2 VGS=-10V ID=-20A 1.6 1.4 1.2 VGS=-6V ID=-20A 1 17 5 2 10 0.8 1 0 5 0 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 12 1.0E+02 ID=-20A 1.0E+01 10 40 EAS 4 -IS (A) RDS(ON) (mΩ Ω) 125°C 6 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 1.0E-05 0 2 3/6 1.0E+00 IAS 8 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON6407 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=-15V ID=-20A 4000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 3000 2000 2 1000 0 0 Coss Crss 0 10 20 30 40 50 60 70 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 400 1000.0 TJ(Max)=150°C TC=25°C 350 RDS(ON) limited 10.0 300 100µs 250 1ms 10ms DC TJ(Max)=150°C TC=25°C 1.0 10µs Power (W) 10µs 100.0 -ID (Amps) 30 17 5 2 10 200 150 100 0.1 50 0.0 0 0.01 0.1 1 -VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 01 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W IAS 1 EAS 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON6407 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C 100 TA=100°C Power Dissipation (W) -IAR (A) Peak Avalanche Current 1000 TA=150°C TA=125°C 10 1 80 60 40 20 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 100 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 10000 TA=25°C 1000 Power (W) Current rating ID(A) 80 60 40 17 5 2 10 100 10 20 1 0 0.0001 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.01 1 100 10000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W IAS EAS 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON6407 30V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn