AON6435 30V P-Channel MOSFET General Description Product Summary The AON6435 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS= -10V) VDS -30V -34A RDS(ON) (at VGS= -10V) < 17mΩ RDS(ON) (at VGS =-5V) < 34mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A -95 -12 IDSM TA=70°C ±25 -21.5 IDM TA=25°C Units V -34 ID TC=100°C Maximum -30 A -10 Avalanche Current C IAS 24 A Avalanche energy L=0.1mH C TC=25°C EAS 29 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Sep 2011 4.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2.6 -55 to 150 TJ, TSTG Symbol t ≤ 10s W 12.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 PD TC=100°C Typ 24 53 3.4 °C Max 30 64 4 Units °C/W °C/W °C/W Page 1 of 7 AON6435 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -95 nA -3 V 13 17 19 25 VGS=-5V, ID=-15A 25 34 28 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 Static Drain-Source On-Resistance Output Capacitance Units -2.3 VGS=-10V, ID=-20A Coss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ A -0.73 1130 VGS=0V, VDS=-15V, f=1MHz S V -35 A 1400 240 5.8 mΩ -1 pF pF 155 VGS=0V, VDS=0V, f=1MHz mΩ pF Ω 8 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 21 nC Qg(4.5V) Total Gate Charge 10 nC 4 nC 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=-10V, VDS=-15V, ID=-20A tD(on) Turn-On DelayTime 10 ns tr Turn-On Rise Time VGS=-10V, VDS=-15V, 8 ns tD(off) Turn-Off DelayTime RL=0.75Ω, RGEN=3Ω 15 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs IF=-20A, dI/dt=500A/µs 7 ns 13.5 ns nC 29 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2011 www.aosmd.com Page 2 of 7 AON6435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 -10V VDS=-5V -8V 80 60 -6V -ID(A) -ID (A) 60 125°C 25°C 20 20 -4.5V VGS=-4V 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 1 2 3 4 5 6 7 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 40 1.8 Normalized On-Resistance 35 VGS=-5V 30 RDS(ON) (mΩ Ω) 40 40 25 20 15 10 VGS=-10V 5 1.6 VGS=-10V ID=-20A 1.4 17 5 2 VGS=-5V 10 1.2 ID=-15A 1 0.8 0 0 5 0 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 60 1.0E+01 ID=-20A 1.0E+00 50 40 40 -IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125°C 30 125°C 1.0E-02 1.0E-03 20 25°C 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON6435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=-15V ID=-20A 1400 8 Ciss Capacitance (pF) -VGS (Volts) 1200 6 4 1000 800 600 Coss 400 2 200 0 Crss 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 400 1000.0 TJ(Max)=150°C TC=25°C 350 RDS(ON) limited 10.0 10µs 100µs 1ms 10ms 1.0 DC TJ(Max)=150°C TC=25°C 0.1 300 Power (W) 10µs 100.0 -ID (Amps) 30 250 17 5 2 10 200 150 100 50 0.0 0 0.01 0.1 1 -VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 010 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=4°C/W 1 PD 0.1 Ton Single Pulse T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep 2011 www.aosmd.com Page 4 of 7 AON6435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 TA=25°C Power Dissipation (W) -IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 10 TA=125°C 30 25 20 15 10 5 1 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 40 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 1000 100 30 25 -ID (Amps) Current rating ID(A) 35 20 15 10 10µs RDS(ON) limited 10 100µs 1ms 10ms 1 TJ(Max)=150°C TA=25°C 0.1 5 DC 0.01 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 0.01 0.1 1 -VDS (Volts) 10 100 Figure 15: Maximum Forward Biased Safe Operating Area (Note H) 400 TA=25°C 350 Power (W) 300 250 200 150 100 50 0 0.0001 Rev 0: Sep 2011 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note H) www.aosmd.com 100 1000 Page 5 of 7 AON6435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=64°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 17: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Sep 2011 www.aosmd.com Page 6 of 7 AON6435 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0: Sep 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 7 of 7