AOSMD AON6435

AON6435
30V P-Channel MOSFET
General Description
Product Summary
The AON6435 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS= -10V)
VDS
-30V
-34A
RDS(ON) (at VGS= -10V)
< 17mΩ
RDS(ON) (at VGS =-5V)
< 34mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
-95
-12
IDSM
TA=70°C
±25
-21.5
IDM
TA=25°C
Units
V
-34
ID
TC=100°C
Maximum
-30
A
-10
Avalanche Current C
IAS
24
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
29
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Sep 2011
4.1
Steady-State
Steady-State
RθJA
RθJC
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W
2.6
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
12.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
31
PD
TC=100°C
Typ
24
53
3.4
°C
Max
30
64
4
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6435
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-95
nA
-3
V
13
17
19
25
VGS=-5V, ID=-15A
25
34
28
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-20A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-2.3
VGS=-10V, ID=-20A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
A
-0.73
1130
VGS=0V, VDS=-15V, f=1MHz
S
V
-35
A
1400
240
5.8
mΩ
-1
pF
pF
155
VGS=0V, VDS=0V, f=1MHz
mΩ
pF
Ω
8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
21
nC
Qg(4.5V) Total Gate Charge
10
nC
4
nC
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=-10V, VDS=-15V, ID=-20A
tD(on)
Turn-On DelayTime
10
ns
tr
Turn-On Rise Time
VGS=-10V, VDS=-15V,
8
ns
tD(off)
Turn-Off DelayTime
RL=0.75Ω, RGEN=3Ω
15
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
IF=-20A, dI/dt=500A/µs
7
ns
13.5
ns
nC
29
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Sep 2011
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Page 2 of 7
AON6435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
-10V
VDS=-5V
-8V
80
60
-6V
-ID(A)
-ID (A)
60
125°C
25°C
20
20
-4.5V
VGS=-4V
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0
5
1
2
3
4
5
6
7
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
1.8
Normalized On-Resistance
35
VGS=-5V
30
RDS(ON) (mΩ
Ω)
40
40
25
20
15
10
VGS=-10V
5
1.6
VGS=-10V
ID=-20A
1.4
17
5
2
VGS=-5V 10
1.2
ID=-15A
1
0.8
0
0
5
0
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
60
1.0E+01
ID=-20A
1.0E+00
50
40
40
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
125°C
30
125°C
1.0E-02
1.0E-03
20
25°C
25°C
1.0E-04
1.0E-05
10
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Sep 2011
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=-15V
ID=-20A
1400
8
Ciss
Capacitance (pF)
-VGS (Volts)
1200
6
4
1000
800
600
Coss
400
2
200
0
Crss
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
400
1000.0
TJ(Max)=150°C
TC=25°C
350
RDS(ON)
limited
10.0
10µs
100µs
1ms
10ms
1.0
DC
TJ(Max)=150°C
TC=25°C
0.1
300
Power (W)
10µs
100.0
-ID (Amps)
30
250
17
5
2
10
200
150
100
50
0.0
0
0.01
0.1
1
-VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
010
100
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Sep 2011
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Page 4 of 7
AON6435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
TA=25°C
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
10
TA=125°C
30
25
20
15
10
5
1
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
40
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
1000
100
30
25
-ID (Amps)
Current rating ID(A)
35
20
15
10
10µs
RDS(ON)
limited
10
100µs
1ms
10ms
1
TJ(Max)=150°C
TA=25°C
0.1
5
DC
0.01
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
0.01
0.1
1
-VDS (Volts)
10
100
Figure 15: Maximum Forward Biased
Safe Operating Area (Note H)
400
TA=25°C
350
Power (W)
300
250
200
150
100
50
0
0.0001
Rev 0: Sep 2011
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note H)
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100
1000
Page 5 of 7
AON6435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=64°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Sep 2011
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Page 6 of 7
AON6435
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: Sep 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 7 of 7