AOSMD AON7448

AON7448
80V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AON7448 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS
ID (at VGS=10V)
80V
24A
RDS(ON) (at VGS=10V)
< 30mΩ
RDS(ON) (at VGS = 8V)
< 37mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Top View
D
Top View
Bottom
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
76
7.1
IDSM
TA=70°C
±25
15
IDM
TA=25°C
Units
V
24
ID
TC=100°C
Maximum
80
A
5.7
Avalanche Current C
IAS, IAR
25
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
31
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1: April 2011
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
15
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
36
PD
TC=100°C
-55 to 150
Typ
30
60
2.8
°C
Max
40
75
3.4
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON7448
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
80
10
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.9
ID(ON)
On state drain current
VGS=10V, VDS=5V
78
TJ=55°C
50
VDS=0V, VGS= ±25V
100
VGS=10V, ID=10A
3.5
25
30
44
53
VGS=8V, ID=10A
29
37
VDS=5V, ID=10A
16
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
Maximum Body-Diode Continuous Current
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
4.1
VGS=10V, VDS=40V, ID=10A
µA
nA
V
A
RDS(ON)
TJ=125°C
Units
V
VDS=80V, VGS=0V
IDSS
IS
Max
mΩ
mΩ
S
1
V
40
A
pF
720
900
1100
75
110
150
pF
25
40
60
pF
0.4
0.8
1.2
Ω
11.5
14.5
17.5
nC
4.5
5.5
6.5
nC
2.8
4.6
6.5
nC
16
VGS=10V, VDS=40V, RL=4Ω,
RGEN=3Ω
ns
7.5
ns
36
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
10
15
20
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
30
43
56
7.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: April 2011
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Page 2 of 7
AON7448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
10V
70
VDS=5V
8
40
7.5
60
50
7V
30
ID(A)
ID (A)
50
8.5V
40
6.5
20
30
20
6V
10
VGS=5.5V
125°C
10
0
0
0
2
4
6
8
0
10
2
4
6
8
10
12
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
40
Normalized On-Resistance
2.2
VGS=8V
35
RDS(ON) (mΩ )
25°C
30
VGS=10V
25
2
VGS=10V
ID=10A
1.8
1.6
1.4
VGS=8V
ID=10A
1.2
17
5
2
10
1
0.8
20
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
60
1.0E+02
ID=10A
1.0E+01
50
40
40
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
30
25°C
1.0E-03
20
25°C
1.0E-04
10
1.0E-05
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: April 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON7448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
10
VDS=40V
ID=10A
1200
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1000
800
600
400
Coss
2
Crss
200
0
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0
60
80
200
10µs
100.00
RDS(ON)
limited
10.00
160
100µs
DC
1ms
1.00
TJ(Max)=150°C
TC=25°C
0.10
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
ID (Amps)
40
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.00
17
5
2
10
120
80
40
0.01
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
10
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
20
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=3.4°C/W
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: April 2011
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Page 4 of 7
AON7448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=125°C
10
TA=150°C
40
30
20
10
1
0
1
10
100
1000
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability (Note
C)
0
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
30
TA=25°C
25
1000
Power (W)
Current rating ID(A)
25
20
15
10
17
5
2
10
100
10
5
1
0.00001
0
0
25
50
75
100
125
Zθ JA Normalized Transient
Thermal Resistance
10
1000
0
18
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
0.001
150
40
RθJA=75°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: April 2011
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Page 5 of 7
AON7448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
25ºC
Qrr
40
125ºC
di/dt=800A/µs
1.2
25ºC
trr
12
trr (ns)
60
1.6
16
Irm (A)
80
Qrr (nC)
20
125ºC
di/dt=800A/µs
0.8
125ºC
10
25ºC
5
4
0
0
S
100
8
Irm
25ºC
20
S
0.4
125ºC
0
0
5
10
15
20
25
30
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
100
5
10
15
20
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
25
30
2.5
Is=20A
Is=20A
80
25
25
20
125ºC
2
125ºC
25ºC
40
10
125ºC
Qrr
5
25ºC
0
200
400
600
1
25ºC
0.5
S
5
800
1000
0
0
0
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 1: April 2011
trr
125º
0
0
25ºC
10
20
Irm
1.5
15
S
15
trr (ns)
60
Irm (A)
Qrr (nC)
20
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON7448
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: April 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7