APH502 34 – 36 GHz High Power Amplifier Product Datasheet Revision: June 2006 Applications EW Radar X=2820µm Y=1260µm Product Features Product Description RF Frequency: 34 to 36 GHz The APH502 monolithic HEMT amplifier is a Linear Gain: 14 dB Typ. broadband, two-stage power device designed for Psat: 30 dBm typ. use in either linear or saturated power applications . To ensure rugged and reliable operation, HEMT IP3: 35 dBm typ. devices are fully passivated. All RF ports are DC Die Size: 3.6 sq. mm. blocked. Both bond pad and backside metallization DC Power: 5 VDC @ 810 mA are Ti/Au, which is compatible with conventional die attach, thermocompression, and thermosonic wire bonding assembly techniques. Performance Characteristics (Ta = 25°C) Specification Frequency Linear Gain Psat IP3 Input Return Loss Output Return Loss Vd1, Vd2 Vg1, Vg2 Id1 Id2 Min 34 12 9 3 Typ 14 30 35 11 5 5 -0.3 270 540 Max Unit 36 GHz dB dBm dBm dB dB V V mA mA Absolute Maximum Ratings (Ta = 25°C) Parameter Vd1, Vd2 Id1 Id2 Vg1, Vg2 Input drive level Assy. Temperature (60 seconds) Min -1 Max Unit 5.5 300 600 +0.3 19 300 V mA mA V dBm deg. C Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the ITAR. This product is for U.S. Sales only. Export out of the U.S. requires a U.S. State Department export license. Velocium Products • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected] • Web: www.st.northropgrumman.com/velocium/ Page 1 of 4 APH502 34 – 36 GHz High Power Amplifier Product Datasheet Revision: June 2006 Measured Performance Characteristics (Typical Performance at 25°C) Vd1 = Vd2 = 5V, Id1 = 270 mA, Id2 = 540 mA Freq GHz S11 Mag 32 0.381 32.5 0.347 33 0.324 33.5 0.293 34 0.268 34.5 0.242 35 0.222 35.5 0.208 36 0.225 36.5 0.287 37 0.366 37.5 0.439 38 0.502 S11 Ang S21 Mag -135.685 3.279 -140.763 3.47 -146.294 3.595 -153.793 3.959 -162.459 4.273 -176.111 4.594 165.295 5.099 138.593 5.544 106.651 5.893 73.474 6.132 44.801 5.964 21.251 5.443 2.395 4.76 S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang -145.511 0.004 87.467 0.706 104.516 -158.995 0.004 76.93 0.67 100.176 -172.813 0.003 103.7 0.641 96.883 171.634 0.005 117.929 0.616 92.761 157.83 0.006 111.275 0.592 88.088 140.731 0.007 99.832 0.551 81.576 121.903 0.008 94.86 0.504 76.939 103.422 0.01 94.195 0.491 69.166 80.81 0.013 83.05 0.426 56.569 56.403 0.015 65.702 0.357 48.745 32.382 0.015 44.475 0.316 32.575 7.063 0.015 25.503 0.207 3.504 -15.087 0.014 19.685 0.078 -17.395 Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the ITAR. This product is for U.S. Sales only. Export out of the U.S. requires a U.S. State Department export license. Velocium Products • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected] • Web: www.st.northropgrumman.com/velocium/ Page 2 of 4 APH502 34 – 36 GHz High Power Amplifier Product Datasheet Revision: June 2006 Measured Performance Characteristics (Typical Performance at 25°C) Vd1 = Vd2 = 5V, Id1 = 270 mA, Id2 = 540 mA Linear Gain Versus Frequency Pout Versus Frequency 18 12 10 Po u t (d Bm ) Gain (dB) 16 14 8 6 4 2 0 32 33 34 35 36 37 38 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 33.0 34.0 Frequency (GHz) 34 35 36 36.0 37.0 Output Return Loss Versus Frequency Output Return Loss (dB) Input Return Loss (dB) 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 33 35.0 Frequency (GHz) Input Return Loss Versus Frequency 32 IP3 P3dB P1dB 37 38 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 32 Frequency (GHz) 33 34 35 36 37 38 Frequency (GHz) Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the ITAR. This product is for U.S. Sales only. Export out of the U.S. requires a U.S. State Department export license. Velocium Products • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected] • Web: www.st.northropgrumman.com/velocium/ Page 3 of 4 APH502 34 – 36 GHz High Power Amplifier Product Datasheet Revision: June 2006 Die Size and Bond Pad Locations RF IN Vg1 X = 2820 µm ± 25 µm Y = 1260 ± 25 µm Bond Pad = 101 x 101 ± 0.5 µm Chip Thickness = 101 ± 5 µm Vd1 Vg2 RF OUT Vd2 Suggested Bonding RF OUT RF IN Vg1 100 pF Vg1 .1µF Vd1 10 Ohms Vg2 Vd2 100 pF 100 pF 100 pF .1µF 10 Ohms Vd1 .1µF .1µF Vd2 Vg2 Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the ITAR. This product is for U.S. Sales only. Export out of the U.S. requires a U.S. State Department export license. Velocium Products • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected] • Web: www.st.northropgrumman.com/velocium/ Page 4 of 4