APTM50DSK10T3 Dual Buck chopper MOSFET Power Module 13 14 Q1 Application • AC and DC motor control • Switched Mode Power Supplies Q2 11 18 22 7 19 10 23 CR1 29 30 8 CR2 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 37A @ Tc = 25°C 10 11 12 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 37 28 140 ±30 100 312 41 50 1600 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM50DSK10T3 – Rev 1 December, 2004 Absolute maximum ratings APTM50DSK10T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 500V Test Conditions VGS = 0V VDS = 25V f = 1MHz Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Maximum Reverse Leakage Current VR=600V IF(A V) Maximum Average Forward Current 50% duty cycle Diode Forward Voltage IF = 30A IF = 60A IF = 30A Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt=200A/µs Unit Max Unit µA mΩ V nA pF nC 49 Test Conditions IRM Typ 4367 894 61 96 Max 100 500 100 5 ±100 24 15 21 52 566 µJ 545 931 µJ 635 Min 600 Tj = 25°C Tj = 125°C Tc = 70°C ns 73 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 37A, R G = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 37A, R G = 5Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage trr Min VGS = 10V VBus = 250V ID = 37A Diode ratings and characteristics Typ 3 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 37A R G = 5Ω Tf VF Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 18.5A VGS = VDS, ID = 1mA VGS = ±30 V, VDS = 0V Typ Max 250 750 Tj = 150°C 30 2.2 2.7 1.5 Tj = 25°C 74 Tj = 100°C 74 Tj = 25°C 123 Tj = 100°C 288 Unit V µA A 2.7 V ns nC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2-6 APTM50DSK10T3 – Rev 1 December, 2004 Symbol APTM50DSK10T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min R 25 1 1 exp B25 / 85 − T T 25 Unit °C/W V 150 125 100 4.7 110 M4 Temperature sensor NTC RT = 2500 -40 -40 -40 Max 0.4 1.2 Typ 68 4080 Max °C N.m g Unit kΩ K T: Thermistor temperature RT : Thermistor value at T 28 17 1 12 APT website – http://www.advancedpower.com 3-6 APTM50DSK10T3 – Rev 1 December, 2004 Package outline APTM50DSK10T3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.9 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 8V VGS=10&15V 120 7.5V I D, Drain Current (A) I D, Drain Current (A) 10 120 140 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 T J=25°C 20 T J=125°C T J=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to V GS=10V @ 18.5A 1.15 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 VGS =10V I D, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 1.10 1.05 VGS =20V 1.00 0.95 0.90 30 20 10 0 0 20 40 60 ID, Drain Current (A) 80 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4-6 APTM50DSK10T3 – Rev 1 December, 2004 Thermal Impedance (°C/W) 0.45 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=18.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100µs 100 1ms 10 Single pulse TJ =150°C 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 1000 Coss 100 VGS , Gate to Source Voltage (V) 10000 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 100000 C, Capacitance (pF) limited by R limited byDSon RDSon ID=37A T J=25°C 12 V DS =100V VDS=250V 10 VDS=400V 8 6 4 2 0 0 20 APT website – http://www.advancedpower.com 40 60 80 100 120 140 Gate Charge (nC) 5-6 APTM50DSK10T3 – Rev 1 December, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DSK10T3 APTM50DSK10T3 Delay Times vs Current Rise and Fall times vs Current 100 td(off) 60 VDS=333V RG=5Ω TJ=125°C L=100µH 40 td(on) 20 60 40 tr 0 10 20 30 40 50 60 ID, Drain Current (A) 70 10 VDS=333V RG=5Ω TJ=125°C L=100µH 1.6 1.2 40 50 60 70 Switching Energy vs Gate Resistance Eon Eoff 0.8 30 2.5 Switching Energy (mJ) 2 20 I D, Drain Current (A) Switching Energy vs Current 0.4 Eoff V DS=333V ID=35A T J=125°C L=100µH 2 1.5 Eon 1 0.5 0 0 20 30 40 50 0 60 10 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS 300 IDR, Reverse Drain Current (A) V DS=333V D=50% R G=5Ω T J=125°C T C=75°C 350 250 200 ZVS 150 hard switching 100 50 0 5 10 15 20 25 ID, Drain Current (A) 30 40 50 Gate Resistance (Ohms) 450 400 20 30 35 1000 100 Source to Drain Diode Forward Voltage TJ =150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM50DSK10T3 – Rev 1 December, 2004 10 Frequency (kHz) tf 20 0 Switching Energy (mJ) VDS=333V RG=5Ω T J=125°C L=100µH 80 t r and tf (ns) t d(on) and td(off) (ns) 80