BC846 thru BC849 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) Mounting Pad Layout 0.031 (0.8) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) 0.035 (0.9) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) max. .004 (0.1) Dimensions in inches and (millimeters) .102 (2.6) .094 (2.4) Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box Type Type Marking BC846A B 1A 1B BC847A B C 1E 1F 1G Marking BC848A B C 1J 1K 1L BC849B C 2B 2C Features • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (A, B, and C) according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended. Maximum Ratings and Thermal Characteristics Parameter 0.037 (0.95) 0.037 (0.95) 2 .037(0.95) .037(0.95) .016 (0.4) 0.079 (2.0) (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage BC846 BC847 BC848, BC849 VCBO 80 50 30 V Collector-Emitter Voltage BC846 BC847 BC848, BC849 VCES 80 50 30 V Collector-Emitter Voltage BC846 BC847 BC848, BC849 VCEO 65 45 30 V Emitter-Base Voltage BC846, BC847 BC848, BC849 VEBO 6 5 V IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA –IEM 200 mA Collector Current Peak Emitter Current (1) Power Dissipation at TSB = 50°C Ptot 310 mW Thermal Resistance Junction to Ambiant Air RθJA 450(1) °C/W Thermal Resistance Junction to Substrate Backside RθSB 320(1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Device on fiberglass substrate, see layout on third page. Document Number 88164 09-May-02 www.vishay.com 1 BC846 thru BC849 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit hfe VCE = 5V, IC = 2mA f = 1kHz — — — 220 330 600 — — — — — — Current Gain Group A B C hie VCE = 5V, IC = 2mA f = 1kHz 1.6 3.2 6.0 2.7 4.5 8.7 4.5 8.5 15.0 kΩ Current Gain Group A B C hoe VCE = 5V, IC = 2mA f = 1kHz — — — 18 30 60 30 60 110 µS hre VCE = 5 V, IC = 2mA f = 1kHz — — — 1.5 ⋅ 10-4 2 ⋅ 10-4 3 ⋅ 10-4 — — — — — — Current Gain Group A B C hFE VCE = 5V, IC = 10µA — — — 90 150 270 — — — — — — Current Gain Group A B C hFE VCE = 5V, IC = 2mA 110 200 420 180 290 520 220 450 800 — — — Collector Saturation Voltage VCEsat IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA — — 90 200 250 600 mV Base Saturation Voltage VBEsat IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA — — 700 900 — — mV 660 — 700 — mV 770 J Small Signal Current Gain Current Gain Group A B C Input Impedance Output Admittance Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain Base-Emitter VoltageVBEon VCE = 5V, IC = 2mA 580 VCE = 5V, IC = 10mA ICBO VCB = 30V VCB = 30V, TJ = 150˚C — — — — 15 5 nA µA fT VCE = 5V, IC = 10mA f = 100MHz — 300 — MHz Collector-Base Capacitance CCBO VCB = 10V, f = 1MHz — 3.5 6 pF Emitter-Base Capacitance CEBO VEB = 0.5V, f = 1MHz — 9 — pF VCE = 5V, IC = 200µA RG =2kΩ,f=1kHz, ∆f= 200Hz — — 2 1.2 10 4 dB dB VCE = 5V, IC = 200µA RG = 2kΩ, f = 30...15000Hz — 1.4 4 dB Collector-Base Cutoff Current Gain-Bandwidth Product Noise Figure BC846, BC847, BC848 BC849 F BC849 Note: (1) Device on fiberglass substrate, see layout on next page www.vishay.com 2 Document Number 88164 09-May-02 BC846 thru BC849 0.30 (7.5) Vishay Semiconductors 0.12 (3) formerly General Semiconductor Layout for RΘJA test Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) Dimensions in inches (millimeters) 0.03 (0.8) 0.47 (12) 0.2 (5) Admissible power dissipation versus temperature of substrate backside 0.06 (1.5) 0.20 (5.1) Pulse thermal resistance versus pulse duration (normalized) Device on fiblerglass substrate, see layout Device on fiblerglass substrate, see layout DC current gain versus collector current Collector-Base cutoff current versus ambient temperature Document Number 88164 09-May-02 www.vishay.com 3 BC846 thru BC849 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88164 09-May-02 BC846 thru BC849 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88164 09-May-02 www.vishay.com 5