DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation Low cost NPN transistor in a plastic SOT23 package. • High current gain • Good thermal stability. 3 handbook, halfpage APPLICATIONS • It is intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or oscillator. 1 PINNING PIN Top view DESCRIPTION 1 base 2 emitter 3 collector 2 MSB003 Marking code: E15. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCEO collector-emitter voltage open base − 20 V VCBO collector-base voltage open emitter − 30 V VEBO emitter-base voltage open collector − 3 V ICM peak collector current − 50 mA Ptot total power dissipation up to Ts = 70 °C; note 1 − 300 mW fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 1.2 1.6 GHz Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCEO collector-emitter voltage open base − 20 V VCBO collector-base voltage open emitter − 30 V VEBO emitter-base voltage open collector − 3 V ICM peak collector current − 50 mA Ptot total power dissipation − 300 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 up to Ts = 70 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. September 1995 2 °C Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS UNIT 260 K/W up to Ts = 70 °C; note 1 thermal resistance from junction to soldering point Rth j-s VALUE Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − TYP. − MAX. UNIT 100 nA ICBO collector cut-off current IE = 0; VCB = 10 V hFE DC current gain IC = 2 mA; VCE = 10 V 40 95 250 fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 0.8 1.2 1.6 GHz Cre feedback capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.5 − pF GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 10 V; f = 100 MHz − 20 − dB Note 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM MBB397 MBB401 400 S 21 = 10 log -------------------------------------------------------------- dB . 2 2 1 – S 11 1 – S 22 140 handbook, halfpage handbook, halfpage Ptot (mW) h FE 300 100 200 60 100 0 0 50 100 150 Ts (oC) 20 10 1 200 1 10 I C (mA) 10 2 VCE = 10 V. Fig.3 Fig.2 Power derating curve. September 1995 3 DC current gain as a function of collector current. Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 MBB400 1.2 Cre (pF) fT (GHz) 0.8 1.0 0.4 0.6 0.2 10−1 0 0 4 8 12 16 20 VCB (V) IE = ie = 0; f = 1 MHz. Fig.4 MBB399 1.4 handbook, halfpage handbook, halfpage 1 10 IC (mA) 102 VCE = 10 V; f = 500 MHz. Feedback capacitance as a function of collector-base voltage. Fig.5 MBB408 MBB407 40 Transition frequency as a function of collector current. 50 GUM (dB) 40 handbook, halfpage handbook, halfpage GUM (dB) 30 30 20 20 10 10 0 −10 10 0 0 10 20 IC (mA) 30 VCE = 10 V; f = 100 MHz. Fig.6 103 f (MHz) 104 IC = 15 mA; VCE = 10 V. Maximum unilateral power gain as a function of collector current. September 1995 102 Fig.7 4 Maximum unilateral power gain as a function of frequency. Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 MBB398 10 MBB409 8 handbook, halfpage handbook, halfpage F (dB) VCE sat (V) 6 1 4 10−1 2 10−2 10−1 1 10 IC (mA) 0 10−1 102 10 IC (mA) 102 VCE = 10 V; ZS = ZL = 50 Ω.; f = 100 MHz. IC/IB = 10. Fig.8 1 Collector-emitter saturation voltage as a function of collector current. Fig.9 MBB410 0 Common emitter noise figure as a function of collector current. MBB413 80 handbook, halfpage handbook, halfpage b11 f = 1000 MHz 800 (mS) 600 400 −20 b21 (mS) −5 mA −10 mA 60 200 IE = −2 mA −40 40 IE = −2 mA 200 −5 mA 300 500 −60 600 800 f = 1000 MHz 20 −10 mA −80 10 20 30 40 0 −50 50 60 g11 (mS) VCB = 10 V. −30 −20 −10 0 10 g21 (mS) VCB = 10 V. Fig.10 Common base input admittance (Y11). September 1995 −40 Fig.11 Common base forward admittance (Y21). 5 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 MBB411 0 b12 (mS) −0.5 MBB412 8 handbook, halfpage handbook, halfpage b22 (mS) IE = −10 mA −5 mA −2 mA f = 1000 MHz 6 200 300 −1.0 IE = −2 mA −5 mA −10 mA 800 500 600 −1.5 4 600 500 800 300 2 −2.0 200 f = 1000 MHz −2.5 −0.7 −0.5 −0.3 g12 (mS) 0 −0.1 0 VCB = 10 V. 0.8 1.2 1.6 g22 (mS) VCB = 10 V. Fig.12 Common base reverse admittance (Y12). September 1995 0.4 Fig.13 Common base output admittance (Y22). 6 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 50 handbook, full pagewidth 25 100 10 250 3 GHz +j 10 0 25 50 100 ∞ 250 −j 40 MHz 250 10 100 25 MBB403 50 IC = 15 mA; VCE = 10 V; ZO = 50 Ω.. Fig.14 Common emitter input reflection coefficient (S11). 90o handbook, full pagewidth 120o 60o 40 MHz 150o 30o +ϕ 180o 20 16 8 4 2 0o 3 GHz −ϕ 30o 150o 60o 120o 90o MBB405 IC = 15 mA; VCE = 10 V. Fig.15 Common emitter forward transmission coefficient (S21). September 1995 7 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 90o handbook, full pagewidth 120o 60o 3 GHz 150o 30o +ϕ 0.1 180o 0.2 0.3 0.4 0.5 40 MHz 0o −ϕ 30o 150o 60o 120o 90o MBB406 IC = 15 mA; VCE = 10 V. Fig.16 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 +j 0 10 25 50 100 250 −j ∞ 40 MHz 250 10 3 GHz 100 25 50 MBB404 IC = 15 mA; VCE = 10 V; ZO = 50 Ω.. Fig.17 Common emitter output reflection coefficient (S22). September 1995 8 Philips Semiconductors Product specification NPN 1 GHz wideband transistor Table 1 BF747 Common base Y-parameters, IE = −2 mA; VCB = 10 V, typical values. Y21 Y11 f (MHz) Y12 Y22 REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) 40 69.0 −10.2 −68.0 12.3 −0.02 −0.1 −0.01 0.3 100 60.4 −20.6 −58.0 25.6 −0.06 −0.3 −0.08 0.7 200 45.0 −27.4 −39.1 34.5 −0.10 −0.6 0.19 1.4 300 34.3 −26.4 −25.4 34.0 −0.20 −0.8 0.29 1.9 400 27.7 −23.3 −17.2 31.1 −0.20 −1.0 0.37 2.5 500 24.0 −20.4 −11.7 27.6 −0.20 −1.2 0.45 3.0 600 21.5 −18.0 −7.8 25.0 −0.20 −1.4 0.53 3.6 700 20.0 −15.6 −5.3 22.6 −0.20 −1.6 0.60 4.2 800 18.6 −14.0 −3.0 20.2 −0.20 −1.8 0.69 4.7 900 18.3 −12.8 −1.3 18.7 −0.20 −2.0 0.82 5.3 1000 17.8 −11.7 −0.1 17.1 −0.20 −2.2 0.95 5.9 Table 2 Common base Y-parameters, IE = −5 mA; VCB = 10 V, typical values. Y11 f (MHz) Y21 Y12 Y22 REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) 40 132.6 −35.7 −130.5 38.8 −0.06 −0.2 −0.06 0.4 100 96.3 −62.0 −91.1 67.9 −0.20 −0.5 0.21 0.8 200 54.7 −57.8 −46.0 64.7 −0.30 −0.7 0.38 1.4 300 37.5 −46.9 −26.4 53.8 −0.40 −0.8 0.47 2.0 400 29.2 −38.6 −16.6 45.8 −0.40 −1.0 0.58 2.5 500 25.3 −32.8 −11.0 39.8 −0.40 −1.3 0.63 3.1 600 22.0 −28.4 −6.3 35.0 −0.40 −1.4 0.71 3.6 700 20.3 −25.2 −3.3 31.4 −0.40 −1.6 0.80 4.2 800 18.7 −22.6 −0.6 27.6 −0.40 −1.9 0.88 4.7 900 17.8 −20.7 1.4 25.2 −0.40 −2.1 1.01 5.3 1000 17.3 −19.1 3.0 23.0 −0.40 −2.3 1.15 6.0 September 1995 9 Philips Semiconductors Product specification NPN 1 GHz wideband transistor Table 3 BF747 Common base Y-parameters, IE = −10 mA; VCB = 10 V, typical values. Y21 Y11 f (MHZ) Y12 Y22 REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) 40 189.0 −79.6 −185.5 83.0 −0.10 −0.3 −0.09 0.4 100 108.5 −99.0 −101.4 105.4 −0.30 −0.5 0.30 0.9 200 55.2 −76.2 −44.6 82.8 −0.50 −0.7 0.44 1.4 300 37.1 −59.0 −24.3 65.7 −0.50 −0.9 0.60 2.0 400 28.8 −47.6 −14.6 54.4 −0.60 −1.0 0.69 2.5 500 24.7 −40.2 −8.6 46.7 −0.60 −1.3 0.75 3.1 600 21.2 −35.0 −3.4 40.8 −0.60 −1.5 0.84 3.6 700 19.3 −31.0 −0.2 36.2 −0.60 −1.7 0.93 4.2 800 17.2 −27.5 2.6 31.1 −0.60 −1.9 1.00 4.7 900 16.4 −25.2 4.6 28.3 −0.60 −2.1 1.15 5.3 1000 15.8 −23.0 6.0 25.5 −0.60 −2.3 1.31 6.0 Table 4 Common base Y-parameters, IE = −15 mA; VCB = 10 V, typical values. Y11 f (MHz) REAL (mS) Y21 IMAG. (mS) REAL (mS) Y12 Y22 IMAG. (mS) REAL (mS) IMAG. (mS) REAL (mS) IMAG. (mS) 40 206.5 −113.8 −202.6 118.1 −0.20 −0.3 0.2 0.5 100 104.3 −114.0 −96.4 120.1 −0.40 −0.5 0.4 0.9 200 53.1 −81.1 −41.7 87.7 −0.50 −0.7 0.6 1.4 300 35.9 −62.1 −22.0 68.6 −0.60 −0.8 0.7 2.0 400 28.1 −50.0 −12.5 56.9 −0.60 −1.1 0.8 2.5 500 23.4 −42.3 −6.1 48.2 −0.60 −1.3 0.8 3.1 600 20.1 −36.4 −1.2 41.6 −0.60 −1.5 0.9 3.6 700 18.2 −32.0 2.0 36.7 −0.60 −1.7 1.0 4.2 800 16.2 −28.2 4.5 31.3 −0.60 −1.9 1.1 4.7 900 15.5 −25.7 6.5 28.1 −0.60 −2.1 1.3 5.3 1000 14.7 −23.5 7.9 24.9 −0.60 −2.3 1.4 5.9 September 1995 10 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 PACKAGE OUTLINE 3.0 2.8 handbook, full pagewidth 0.150 0.090 0.55 0.45 B 1.9 0.95 2 1 0.1 max 10 o max 0.2 M A A 1.4 1.2 2.5 max 10 o max 3 1.1 max 30 o max 0.48 0.38 0.1 M A B MBC846 TOP VIEW Dimensions in mm. Fig.18 SOT23. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 11