PHILIPS BF862

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BF862
N-channel junction FET
Preliminary specification
1999 Jun 29
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
PINNING SOT23
FEATURES
• High transition frequency for excellent sensitivity in
AM car radios
PIN
• High transfer admittance.
APPLICATIONS
DESCRIPTION
1
source
2
drain
3
gate
• Pre-amplifiers in AM car radios.
3
handbook, halfpage
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package.
Drain and source are interchangeable.
1
2
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
−
20
V
VGS (off)
gate-source cut-off voltage
−
−0.7
−
V
IDSS
drain-source current
10
−
25
mA
Ptot
total power dissipation
−
−
225
mW
|yfs|
transfer admittance
30
40
−
mS
Tj
junction temperature
−
−
150
°C
Ts ≤ 92 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jun 29
2
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
20
V
VDG
drain-gate voltage
−
20
V
VGS
gate-source voltage
−
−20
V
IDS
drain-source current
−
40
mA
IG
forward gate current
−
10
mA
Ptot
total power dissipation
−
225
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Ts ≤ 92 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Notes
1. Soldering point of the gate lead.
MGS298
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0
40
80
120
160
Ts (°C)
Fig.2 Power derating curve.
1999 Jun 29
3
note 1
VALUE
UNIT
260
K/W
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage
IGS = −1 µA; VDS = 0
−20
−
−
V
VGS
gate-source forward voltage
VDS = 0; IG = 1 mA
−
−
1
V
VGS (off)
gate-source cut-off voltage
VDS = 8 V; ID = 1 µA
−
−0.7
−
V
IGSS
reverse gate current
VGS = −15 V; VDS = 0
−
−
−1
nA
IDSS
drain-source current
V GS = 0; VDS = 8 V
10
−
25
mA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VGS = 0; VDS = 8 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
yfs
common source forward transfer T j = 25 °C
admittance
gos
common source output
conductance
Ciss
MIN.
TYP.
MAX.
UNIT
30
40
−
mS
T j = 25 °C
−
−
400
µS
input capacitance
f = 1 MHz
−
10
−
pF
Crss
reverse transfer capacitance
f = 1 MHz
−
2.5
−
pF
en
equivalent noise input voltage
f = 100 kHz
−
0.8
−
nV/√Hz
fT
transition frequency
−
640
−
MHz
1999 Jun 29
4
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 Jun 29
EUROPEAN
PROJECTION
5
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 29
6
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© Philips Electronics N.V. 1999
SCA 66
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Printed in The Netherlands
125004/00/01/pp7
Date of release: 1999
Jun 29
Document order number:
9397 750 06154