Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 3.4 A; TC = 25°C 600 V ± 20 V 5.4 3.7 A A 225 0.3 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = 5.2 A VGS(th) VDS = VGS; ID = 0.34 mA IDSS VDS = 600 V; VGS = 0 V 2.5 TVJ = 25°C TVJ = 125°C typ. max. 350 385 mΩ 3 3.5 V 1 µA µA 100 nA tbd IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A 17 4 6 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 5.2 A; RG = 4.3 Ω tbd tbd tbd tbd RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 790 38 • Fast CoolMOS power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) • Fully isolated package Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter CoolMOS is a trademark of Infineon Technologies AG. pF pF 22 nC nC nC ns ns ns ns 3.95 K/W 0649 Symbol 1-4 Advanced Technical Information IXKP 10N60C5M Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 5.2 A; VGS = 0 V 0.9 trr QRM IRM IF = 5.2 A; -diF/dt = 100 A/µs; VR = 400 V 260 21 24 max. 5.2 A 1.2 V ns µC A Component Conditions TVJ Tstg operating Md mounting torque Symbol Conditions Maximum Ratings with heatsink compound thermal resistance junction - ambient 0.4 ... 0.6 Nm typ. max. 0.50 80 K/W K/W 2 g Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved °C °C Characteristic Values min. RthCH RthJA -40...+150 -40...+150 0649 Symbol 2-4 IXKP 10N60C5M Advanced Technical Information TO-220 ABFP Outline ØP A E A1 H Q D L1 A2 L b1 c b e 35 16 25 20 V TJ = 25°C 8V 10 V 7V 30 VGS = 12 VGS = 7V 10 V 14 20 25 8V TJ = 150°C 6V 20 V 5.5 V 6V I D [A ] I D [A ] Ptot [ W] 10 15 20 5.5 V 15 10 8 5V 6 10 4.5 V 5V 4 5 5 4.5 V 2 0 0 40 80 120 TC [°C] Fig. 1 Power dissipation 160 0 0 5 10 V [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved DS 15 20 0 5 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 0649 0 3-4 IXKP 10N60C5M Advanced Technical Information 1.6 6V VDS = 40 ID = 5.2 A VGS = 10 V 7V 5V 5.5 V VDS > 2·RDS(on) max · ID 36 25 °C 1 32 20 V TJV = 150°C 1.2 1.2 6.5 V 28 0.8 I D [A ] [Ω] DS (on) [Ω] 0.6 R 0.8 R DS (on) 24 98 % 20 150 °C 16 TJ = typ 0.4 12 0.4 8 0.2 4 0 0 0 5 10 15 0 -60 20 -20 20 60 140 180 0 2 Fig. 3 Typ. drain-source on-state resistance characteristics of IGBT Fig. 4 Drain-source on-state resistance 2 10 VGS = 0 V f = 1 MHz 8 7 10 3 10 2 Ciss C [pF ] [V ] 5 V GS I F [A ] 4 400 V 6 4 10 10 VDS =120 V 150 °C, 98% 25 °C Coss 0 3 25 °C, 98% 2 10 1 10 0 1 10 10 5 9 TJ = 150 °C 8 [V] GS Fig. 5 Typ. transfer characteristics 10 1 6 V ID = 5.2 A pulsed 10 4 T j [°C] I D [A] 10 100 -1 Crss 0 0 0.5 1 V SD 1.5 2 0 5 10 [V] Q Fig. 6 Forward characteristic of reverse diode Fig. 7 15 20 0 50 100 V gate [nC] Typ. gate charge DS 150 200 [V] Fig. 8 Typ. capacitances 700 250 ID = 3.4 A ID = 0.25 mA 200 660 620 V E AS B R (DS S ) [m J ] [V ] 150 100 580 50 0 540 60 100 140 180 -60 -20 20 T j [°C] Fig. 9 Avalanche energy 100 140 180 Fig. 10 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 60 T j [°C] 0649 20 4-4