KEC KTK596

SEMICONDUCTOR
KTK596
TECHNICAL DATA
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
CONDENSER MICROPHONE APPLICATION.
FEATURES
B
Expecially Suited for Use in Audio, Telephone.
A
Capacitor Microphones.
O
F
Excellent Voltage Characteristics.
Excellent Transient Characteristics.
H
G
M
C
MAXIMUM RATING (Ta=25
SYMBOL
RATING
UNIT
VGDO
-20
V
Gate Current
IG
10
mA
Drain Current
ID
1
mA
Drain Power Dissipation
PD
400
mW
Junction Temperature
Tj
150
Tstg
-55 150
E
E
Storage Temperature Range
2
3
N
L
1. SOURCE
2. GATE
ELECTRICAL CHARACTERISTICS (Ta=25
3. DRAIN
TO-92M
)
CHARACTERISTIC
SYMBOL
Gate-Drain Breakdown Voltage
V(BR)GDO
IG=-100 A
Gate-Source Cut-off Voltage
VGS(OFF)
IDSS (Note)
Drain Current
1
K
Gate-Drain Voltage
D
J
CHARACTERISTIC
)
DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
_ 0.15
D
2.40 +
E
1.27
F
2.30
_ 0.50
G
14.00 +
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
-20
-
-
V
VDS=5V, ID=1 A
-
-0.6
-1.5
V
VDS=5V, VGS=0
100
-
480
A
Foward Transfer Admittance
| yfs |
VDS=5V, VGS=0, f=1kHz
0.4
1.2
-
mS
Input Capacitance
Ciss
VDS=5V, VGS=0, f=1MHz
-
3.5
-
pF
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0, f=1MHz
-
0.65
-
pF
Note : IDSS Classification
2002. 8. 7
A:100 170, B:150 240, C:210
Revision No : 3
350, C1:210~310, C2:290~350, D:320 480
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KTK596
ELECTRICAL CHARACTERISTICS
(Ta=25 , VCC=4.5V, RL=1k , Cin=15pF, See Specified Test Circuit.)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Voltage Gain
GV
Vin=10mV, f=1kHz
-
-3.0
-
dB
Reduced Voltage Characteristic
GVV
Vin=10mV, f=1kHz VCC=4.5V 1.5V
-
-1.2
-4.0
dB
Frequency Characteristic
GVF
f=1kHz 110Hz
-
-
-1.0
dB
Input Resistance
Zin
f=1kHz
25
-
-
Output Resistance
ZO
f=1kHz
-
-
700
Total Harmonic Distortion
THD
Vin=30mV, f=1kHz
-
1.0
Output Noise Voltage
VNO
Vin=0, A curve
-
-
M
%
-110
dB
SPECIFIED TEST CIRCUIT
Voltage gain.
Frequency Characteristic.
Distortion.
Reduced Voltage Characteristic.
1kΩ
VCC =4.5V
VCC =1.5V
33uF
15pF
A
B
VTVM
V
THD
1kΩ
OSC
For Output
Impedance
2002. 8. 7
Revision No : 3
2/3
OUTPUT NOISE VOLTAGE VNO (dB)
VNO - I DSS
-110
V NO :VCC =4.5V
V i =0,A CURVE
-112
R L =1.0kΩ
I DSS :VDS =5.0V
-114
-116
-118
-120
50
70 100
300
500
1k
TOTAL HARMONIC DISTORTION THD (%)
KTK596
THD - V IN
30
THD : VCC =4.5V
f=1kHz
I DSS : VDS =5.0V
10
5
3
1
0.7
0.5
0
2
0
-2
1.5V
-6
50
70 100
300
500
1k
TOTAL HARMONIC DISTORTION THD (%)
REDUCED VOLTAGE CHARACTERISTIC
G vV (dB)
G vV - I DSS
-4
240
THD - I DSS
50
30
10
7
THD : V CC =4.5V
V in =30mV
f=1kHz
I DSS : VDS =5.0V
5
3
50
70 100
300
500
1k
700
OUTPUT RESISTANCE Z o (Ω)
INPUT RESISTANCE Z i (MΩ)
200
Z o - I DSS
Z i :V CC =4.5V
V in =10mV
f=1kHz
I DSS :V DS =5.0V
600
500
400
Z o :VCC =4.5V
Vin =10mV
300
f=1kHz
I DSS :VDS =5.0V
200
70 100
300
500
DRAIN CURRENT I DSS ( A)
2002. 8. 7
160
Z i - I DSS
32
26
50
120
DRAIN CURRENT I DSS (µA)
34
28
80
DRAIN CURRENT I DSS (µA)
36
30
40
INPUT VOLTAGE V IN (mV)
DRAIN CURRENT I DSS (µA)
Gv V :VCC =4.5V
V in =10mV
f=1kHz
I DSS :VDS =5.0V
A
=100µ
µA
0
5
2
=
I DSS
µA
=400
S
I DS
I DSS
Revision No : 3
1k
50
70 100
300
500
1k
DRAIN CURRENT I DSS (µA)
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