KEC KTX598TF

SEMICONDUCTOR
KTX598TF
TECHNICAL DATA
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
CONDENSER MICROPHONE APPLICATION.
TENTATIVE
FEATURES
Expecially Suited for Use in Audio, Telephone.
Capacitor Microphones.
Excellent Voltage Characteristics.
Excellent Transient Characteristics.
B
ESD Protection to IEC61000-4-2 Level 4.
B1
1
4
D
C
A
A1
C
EMI/RFI fitering.
3
)
CHARACTERISTIC
T
MAXIMUM RATING (Ta=25
SYMBOL
RATING
UNIT
Supply Voltage
VSUPPLY
5
V
Supply Current
ISUPPLY
1
mA
Power Dissipation
PD
100
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 150
1. GND 1
2. INPUT(GATE)
3. GND 2
4. OUTPUT(DRAIN)
TFSQ
Marking
EQUIVALENT CIRCUIT
Type Name
200 Ω
Output
Input
15pF
GND2
2008. 10. 21
MILLIMETERS
_ 0.05
1.0 +
_ 0.05
0.7 +
_ 0.05
1.0 +
_ 0.05
0.8 +
0.35
_ 0.05
0.15 +
0.38+0.02/-0.04
_ 0.05
0.1 +
H
2
DIM
A
A1
B
B1
C
D
H
T
4
B1
33pF
GND1
Revision No : 1
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KTX598TF
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Supply Voltage
VSUPPLY
-
-
-
5.0
V
Supply Current
ISUPPLY*
150
-
350
A
f=1kHz
-
4
-
f=1kHz, VSUPPLY=2.0V
-
3
-
dB
f=1kHz~100Hz, VSUPPLY=2.0V
-
-
-1.0
dB
CINPUT
Input Capacitance
GV
Voltage Gain
Gain Reduction with Frequency
GV
Input Impedance
Outpur Impedance
Total Harmonic Distortion
ZINPUT
f=1kHz, VSUPPLY=2.0V
30
-
-
M
ZOUTPUT
f=1kHz, VSUPPLY=2.0V
-
-
2.2
k
f=1kHz, VSUPPLY=2.0V, VIN=20mV
-
0.6
-
%
f=1kHz, VSUPPLY=3.0V
-
-110
-
dB
THD
Output Noise
n
Ta=25 , RL=2.2k
VSUPPLY=2.0V
CIN=5pF, VSIGNAL=28mVpp, See Specified AC Test Circuit
Note 1: Absolute Maximum Ratings indicate Iimits beyond which damage to the device may occur.
Note 2: ESD Test Condition is IEC 61000-4-2 Standard which is 330 in series with 150pF.
Note 3: Supply Voltage indicates conditions for which the device is inteded to be functional, but specific performance is
not guaranteed. For guaranteed specifications and the conditions, see the Electrical Characteristics.
* ISUPPLY Classification
Y(1):120~250,
GR(2):210~350
SPECIFIED TEST CIRCUIT
VSUPPLY
2.2k Ω
200 Ω
Vout
33µF
5pF
15pF
33pF
OSC
2008. 10. 21
Revision No : 1
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