SEMICONDUCTOR KTX598TF TECHNICAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CONDENSER MICROPHONE APPLICATION. TENTATIVE FEATURES Expecially Suited for Use in Audio, Telephone. Capacitor Microphones. Excellent Voltage Characteristics. Excellent Transient Characteristics. B ESD Protection to IEC61000-4-2 Level 4. B1 1 4 D C A A1 C EMI/RFI fitering. 3 ) CHARACTERISTIC T MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Supply Voltage VSUPPLY 5 V Supply Current ISUPPLY 1 mA Power Dissipation PD 100 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 150 1. GND 1 2. INPUT(GATE) 3. GND 2 4. OUTPUT(DRAIN) TFSQ Marking EQUIVALENT CIRCUIT Type Name 200 Ω Output Input 15pF GND2 2008. 10. 21 MILLIMETERS _ 0.05 1.0 + _ 0.05 0.7 + _ 0.05 1.0 + _ 0.05 0.8 + 0.35 _ 0.05 0.15 + 0.38+0.02/-0.04 _ 0.05 0.1 + H 2 DIM A A1 B B1 C D H T 4 B1 33pF GND1 Revision No : 1 3 1 2 1/2 KTX598TF ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Supply Voltage VSUPPLY - - - 5.0 V Supply Current ISUPPLY* 150 - 350 A f=1kHz - 4 - f=1kHz, VSUPPLY=2.0V - 3 - dB f=1kHz~100Hz, VSUPPLY=2.0V - - -1.0 dB CINPUT Input Capacitance GV Voltage Gain Gain Reduction with Frequency GV Input Impedance Outpur Impedance Total Harmonic Distortion ZINPUT f=1kHz, VSUPPLY=2.0V 30 - - M ZOUTPUT f=1kHz, VSUPPLY=2.0V - - 2.2 k f=1kHz, VSUPPLY=2.0V, VIN=20mV - 0.6 - % f=1kHz, VSUPPLY=3.0V - -110 - dB THD Output Noise n Ta=25 , RL=2.2k VSUPPLY=2.0V CIN=5pF, VSIGNAL=28mVpp, See Specified AC Test Circuit Note 1: Absolute Maximum Ratings indicate Iimits beyond which damage to the device may occur. Note 2: ESD Test Condition is IEC 61000-4-2 Standard which is 330 in series with 150pF. Note 3: Supply Voltage indicates conditions for which the device is inteded to be functional, but specific performance is not guaranteed. For guaranteed specifications and the conditions, see the Electrical Characteristics. * ISUPPLY Classification Y(1):120~250, GR(2):210~350 SPECIFIED TEST CIRCUIT VSUPPLY 2.2k Ω 200 Ω Vout 33µF 5pF 15pF 33pF OSC 2008. 10. 21 Revision No : 1 2/2