KTK598V SEMICONDUCTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA CONDENSER MICROPHONE APPLICATION. FEATURES E Specially Suited for Use in Audio, Telephone B Electret Capacitor Microphones. High Voltage Gain. G H A D 2 Ultra Small & Thin Size Package. 1 K 3 P J C P DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 0.3 + D _ 0.05 1.2 + E _ 0.05 G 0.8 + H 0.40 _ 0.05 J 0.12 + _ 0.05 K 0.2 + P 5 MAXIMUM RATING (Ta=25 CHARACTERISTIC 1. SOURCE 2. DRAIN 3. GATE ) SYMBOL RATING UNIT VGDO -20 V Gate Current IG 10 mA Drain Current ID 10 mA Drain Power Dissipation PD 100 mW Junction Temperature Tj 150 Tstg -55 150 Gate-Drain Voltage Storage Temperature Range VSM Marking I DSS Rank Type Name 2006. 11. 1 Revision No : 1 B 1/4 KTK598V ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Gate-Drain Breakdown Voltage V(BR)GDO IG=-100 A Gate-Source Cut-off Voltage VGS(OFF) IDSS (Note) Drain Current TEST CONDITION MIN. TYP. MAX. UNIT -20 - - V VDS=2V, ID=1 A - -0.6 -1.0 V VDS=2V, VGS=0 150 - 350 A Foward Transfer Admittance | yfs | VDS=2V, VGS=0, f=1kHz 1.35 1.85 - mS Input Capacitance Ciss VDS=2V, VGS=0, f=1MHz - 4.0 - pF Reverse Transfer Capacitance Crss VDS=2V, VGS=0, f=1MHz - 0.65 - pF Voltage Gain GV - 1.4 - dB Reduced Voltage Characteristic GVV - -0.8 - dB Frequency Characteristic GVF - 0 -1 dB Input Resistance Zin f=1kHz 25 - - Output Resistance ZO f=1kHz - - 700 - 0.6 - % - -110 -104 dB Total Harmonic Distortion THD Output Noise Voltage VNO Note : IDSS Classification Y(1):150~240, VDD=2V, RL=2.2K , Cg=5pF, f=1kHz, VIN=10mV VDD=2V~1.5V, RL=2.2K , Cg=5pF, f=1kHz, VIN=10mV VDD=2V, RL=2.2K , Cg=5pF, f=1kHz~100Hz, VIN=10mV VDD=2V, RL=2.2K , Cg=5pF, f=1kHz, VIN=50mV VDD=2V, RL=1K , Cg=10pF, A-Curve M GR(2):210~350 SPECIFIED TEST CIRCUIT Voltage Gain. Frequency Characteristic. Distortion. Reduced Voltage Characteristic. 5pF VCC =2.0V 33µF VCC =1.5V VTVM OSC 2006. 11. 1 2.2k Revision No : 1 V THD 2/4 KTK598V VGS - ID 500 VDS = 2V Ta = 25 C GATE SOURCE CUT OFF VOLTAGE VGS(OFF) (V) DRAIN CURRENT ID (µA) 600 VGS(OFF) - IDSS 500 400 300 IDSS=350µA 200 IDSS=240µA 100 IDSS=160µA VDS = 2V ID = 1µA Ta = 25 C 400 300 200 100 0 0 -1 -0.8 0.6 0.4 -0.2 0 0 yfs - IDSS 2.5 2.5 1.5 1 0.5 0 2 1.5 1 0.5 0 0 100 200 300 400 500 600 0 DRAIN CURRENT IDSS (µA) 100 VDD = 2V 1.5V, Cg = 5pF 2.50 RL = 2.2kΩ, f = 1KHz , VIN = 10mV, Ta = 25 C 2.00 1.50 1.00 0.50 0.00 100 200 300 DRAIN CURRENT IDSS (µA) Revision No : 1 300 400 Ciss - VDS 3.00 0 200 DRAIN CURRENT IDSS (µA) INPUT CAPACITANCE Ciss (pF) REDUCED VOLTAGE CHARACTERISTIC GVV (dB) 400 VDD = 2V Cg = 5pF RL = 2.2kΩ f = 1KHz VIN = 10mV Ta = 25 C GVV - IDSS 2006. 11. 1 300 GV - IDSS VDS = 2V VGS = 0V Ta = 25 C 2 200 DRAIN CURRENT IDSS (µA) VOLTAGE GRIN GV (dB) FORWARD TRANSFER ADMITTANCE yfs (mS) GATE-SOURCE VOLTAGE VGS (V) 100 400 10 VGS = 0V f = 1KHz Ta = 25 C 1 1 2 3 4 5 DRAIN-SOURCE VOLTAGE VDS (V) 3/4 THD - VIN 10 A 160µ 200µA A 350µ 1 VDD = 4.5V f = 1KHz Ta = 25 C 0.1 0 40 80 120 200 160 INPUT VOLTAGE VIN (mV) 2006. 11. 1 Revision No : 1 240 TOTAL HAMONIC DISTORTION THD (%) TOTAL HAMONIC DISTORTION THD (%) KTK598V THD - IDSS 2.5 VDD = 2V Cg = 5pF RL = 2.2kΩ f = 1KHz VIN = 50mV Ta = 25 C 2 1.5 1 0.5 0 0 100 200 300 400 DRAIN CURRENT IDSS (µA) 4/4