N-Channel Junction FET RJN1163 Electret Capacitor Microphone Applications Package Type : SOT-300 Features [unit:mm] Specially suited for use in audio and telephone electret capacitor microphones Excellent voltage gain Very low noise High ESD voltage Ultra-small size package 1.60±0.05 0.31±0.03 0.12±0.03 0.80±0.05 1.40±0.01 3 0~0.02 1 Applications 2 0.21±0.03 0.21±0.03 0.5±0.05 Cellular phones Portable audio PDAs MP3 players MAX 0.34 0.5±0.05 [TOP VIEW] 1. Drain [SIDE VIEW] 2. Source 3. Gate Absolute Maximum Ratings at Ta = 25 oC Parameter Symbol Ratings Unit VGDO -20 V Gate Current IG 10 mA Drain Current ID 10 mA Allowable Power Dissipation PD 100 mW Junction Temperature Tj 150 o C -55 to +150 o C Gate-to-Drain Voltage Storage Temperature Tstg Electrical Characteristics at Ta = 25 o C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS |yfs| Ciss Crss * The RJN1163 is classified by IDSS as follows Classification A1 IDSS(µA) RFsemi Technologies, Inc. 70~120 Conditions IG = -100µA VDS = 5V, ID = 1µA VDS = 5V, VGS = 0 VDS = 5V, VGS = 0, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDS = 5V, VGS = 0, f = 1MHz Min -20 -0.2 70* 0.4 Ratings Typ Max -0.6 Unit V V µA mS pF pF -1.5 430* 1.2 3.5 0.8 A2 B C D 100~170 150~270 210~350 320~430 Rev. 4 RJN1163 Electrical Characteristics Parameter Symbol Conditions Min Typ Max Unit o [Ta = 25 C , VCC = 4.5V, RL = 1kΩ, CIN = 15pF, See Specified Test Circuit.] Voltage Gain GV VIN = 10 mV, f = 1kHz VIN = 10 mV, VCC = 4.5 -> 1.5V Reduced Voltage Characteristics ∆GVV f = 1kHz to 110Hz Frequency Characteristics ∆GVf Input Impedance ZIN f = 1kHz Output Impedance ZO f = 1kHz Total Harmonic Distortion THD VIN = 10mV, f = 1kHz Output Noise Voltage VNO VIN = 0, A curve -3.0 -1.2 dB dB dB MΩ -3.5 -1.0 30 Ω % dB 700 1.0 -110 Test Circuit Voltage Gain Frequency Characteristics Distortion Reduced Voltage Characteristics 1kΩ Vcc = 4.5V 15pF Vcc = 1.5V OSC 33µF B THD V 1kΩ Output Impedance VTVM ID - VDS 500 400 VGS = 0V 300 ID - VDS 500 Drain Current, ID - µA Drain Current, ID - µA A -0.1V 200 -0.2V 100 -0.5V -0.3V -0.4V 400 VGS = 0V 300 -0.1V 200 -0.2V 100 -0.3V -0.4V -0.5V 0 0 0 1 2 3 4 Drain - to - Source Voltage, VDS - V RFsemi Technologies, Inc. 5 0 2 4 6 8 10 Drain - to - Source Voltage, VDS - V Rev. 4 ID - VGS 1,000 VDS = 5V 600 IDS S = A 0µ 65 4 400 µA 20 2 µA 00 200 0 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 Drain Current, ID - µA 800 Forward Transfer Admittance, l yfs l - mS RJN1163 2 1 0.7 0.5 0.3 0.2 50 70 100 VGS(off) - IDSS 300 500 700 1000 2000 Ciss - VDS 20 VDS = 5V ID = 1µA -1 0.7 0.5 0.3 0.2 VGS = 0 f = 1MHz 10 7 5 3 2 1 -0.1 50 70 100 200 300 500 700 1000 0.7 2000 1 Crss - VDS 5 1 0.7 0.5 0.3 0.2 5 7 20 30 -2 -4 GV : VCC = 5V VIN = 10mV RL = 1.0kΩ f = 1kHz IDSS : VDS = 5.0V -6 -8 0.1 10 0 Voltage Gain, Gv -dB 2 3 GV - IDSS 2 VGS = 0 f = 1MHz 3 2 Drain - to - Source Voltage, VDS - V Drain Current, IDSS - µA Reverse Transfer Capacitance, Crss - pF 200 Drain Current, IDSS - µA Input Capacitance, Ciss - pF Cutoff Voltage, VGS(off) - V VDS = 5V VGS = 0V f = 1kHz 3 Gate - to - Source Voltage, VGS - V 2 l yfs l - IDSS 5 -10 0.7 1 2 3 5 7 10 Drain - to - Voltage, VDS - V RFsemi Technologies, Inc. 20 50 70 100 200 300 500 700 1000 Drain Current, IDSS - µA Rev. 4 THD - IDSS ∆GVV - IDSS 3 ∆GVV : VCC = 4.5V to 1.5V VIN = 10mV f=1kHz IDSS : VDS = 5.0V 2 1 0 -1 -2 Total Harmonic Distortion, THD - % Reduced Voltage Characteristics, ∆GVV - dB RJN1163 THD : VCC = 4.5V VIN = 30mV f = 1kHz IDSS : VDS = 5.0V 3 2 1 0.7 -3 0.5 -4 -5 0.3 50 70 100 200 300 500 700 1000 50 70 100 Drain Current, IDSS - µA ZIN - IDSS Output Impedance, Zo - Ω 42 200 40 38 300 500 Drain Current, IDSS - µA 700 1000 ZO - IDSS 700 ZIN : VCC = 4.5V VIN = 10mV f = 1kHz IDSS : VDS = 5.0V 44 Input Impedance, ZIN - MΩ 5 ZO : VCC = 4.5V VIN = 10mV f = 1kHz IDSS : VDS = 5.0V 600 500 400 300 36 200 70 100 200 300 Drain Current, IDSS - µA 500 700 50 1000 PD - Ta 120 Total Harmonic Distortion, THD - % Allowable Power Dissipation, PD -mW 50 100 80 60 40 20 0 0 20 40 60 80 100 120 o Ambient Temperature, Ta - C RFsemi Technologies, Inc. 140 160 70 100 200 300 Drain Current, IDSS - µA 500 700 1000 THD - VIN 30 THD : VCC = 4.5V f = 1kHz IDSS : VDS = 5.0V 20 10 7 IDSS 5 3 0µA = 10 µA 300 A µ 400 2 1 0.7 0.5 0 40 80 120 160 200 240 Input Voltage, VIN - mV Rev. 4