PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm VCES = 600V VCE(on) typ. = 1.67V G @VGE = 15V, IC = 60A E n-channel Benefits • Generation 4 IGBT's offer highest efficiencies available • Maximum power density, twice the power handling of the TO-247, less space than TO-264 • IGBTs optimized for specific application conditions • Cost and space saving in designs that require multiple, paralleled IGBTs SUPER - 247 Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ➂ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 600 85 60 200 200 ± 20 180 350 140 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm from case ) Thermal Resistance\ Mechanical Parameter RθJC RθCS RθJA www.irf.com Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min. Typ. Max. ––– ––– ––– 20.0(2.0) ––– ––– 0.24 ––– ––– 6 (0.21) 0.36 ––– 38 ––– ––– Units °C/W N (kgf) g (oz) 1 5/12/99 IRG4PSC71U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Emitter-to-Collector Breakdown Voltage ➃ 18 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.45 ––– 1.67 VCE(ON) Collector-to-Emitter Saturation Voltage ––– 1.95 ––– 1.71 VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 gfe Forward Transconductance ➄ 47 70 ––– ––– ICES Zero Gate Voltage Collector Current ––– ––– ––– ––– IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES V(BR)ECS Max. Units Conditions ––– V VGE = 0V, IC = 250µA ––– V VGE = 0V, IC = 1.0A ––– V/°C VGE = 0V, IC = 5.0mA 2.0 IC = 60A VGE = 15V ––– IC = 100A See Fig.2, 5 V ––– IC = 60A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.0mA ––– S VCE = 50V, IC = 60A 500 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5.0 mA VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 340 44 160 34 50 56 86 0.42 1.99 2.41 30 49 129 175 4.5 13 7500 720 93 Max. Units Conditions 520 IC = 60A 66 nC VCC = 400V See Fig. 8 240 VGE = 15V ––– ––– TJ = 25°C ns 84 IC = 60A, VCC = 480V 130 VGE = 15V, RG = 5.0Ω ––– Energy losses include "tail" ––– mJ See Fig. 10, 11, 13, 14 3.2 ––– TJ = 150°C, ––– IC = 60A, VCC = 480V ns ––– VGE = 15V, RG = 5.0Ω ––– Energy losses include "tail" ––– mJ See Fig. 13, 14 ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Current limited by the package, (Die current = 100A) Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PSC71U 150 For both: 120 L oad C urrent (A ) Triangular wave: Duty cycle: 50% T J = 125°C T sink= 90°C Gate drive as specified Power Dissipation = 58W 90 Clamp voltage: 80% of rated Square wave: 60% of rated voltage 60 30 Ideal diodes A 0 0.1 1 10 100 f, F re q ue n cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) I C , Collector Current (A) (A) Ic , Collector-to-Emitter Current TJ = 25 °C TJ = 150 °C 100 100 TJ = 150 °C 10 1 1.0 I C , Collector-to-Emitter Current (A) 1000 1000 V GE = 15V 80µs PULSE WIDTH 1.5 2.0 2.5 3.0 3.5 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 25 °C 10 V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PSC71U 100 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current (A) L IM IT E D B Y P A C K A G E 80 60 40 20 V G E = 1 5V A 0 25 50 75 100 125 VGE = 15V 80 us PULSE WIDTH IC = 120A 2.0 IC = 60A IC = 30A 1.0 -60 -40 -20 150 TC , C a s e Te m p e ra tu re (°C ) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C) Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature Thermal Response (ZthJC) 1 D = 0 .50 0.1 0 .20 PDM 0 .1 0 0.05 0.0 2 0.01 0.01 0.0001 t1 t2 SIN G L E PU L SE (THE R M A L R ES PO N SE ) Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 10 A 100 t 1 , R e ctang ular Pulse D uratio n (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PSC71U 14000 VGE , Gate-to-Emitter Voltage (V) 12000 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 10000 Cies 8000 6000 Coes 4000 Cres 2000 0 1 10 16 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) 100 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 7.0 I C = 60A 6.0 5.0 4.0 3.0 2.0 20 30 40 RG , Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 200 300 400 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 8.0 10 100 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 VCC = 400V I C = 60A 50 RG = 5.0Ohm Ω VGE = 15V VCC = 480V IC = 120 A 10 IC = 60 A IC = 30 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PSC71U RG TJ 12 VCC VGE 1000 Ω = 5.0Ohm = 150 °C = 480V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 14 10 8 6 4 VGE = 20V T J = 125 oC 100 10 2 SAFE OPERATING AREA 1 0 20 40 60 80 100 I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 120 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PSC71U L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 480V 9 0% 1 0% VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4PSC71U Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 8 www.irf.com