TSTA7100 Vishay Telefunken GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a very high radiant intensity without external optics. Features D D D D D D D Extra high radiant intensity High radiant power Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° 94 8483 Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Test Conditions tp/T = 0.5, tp tp 100 ms x Tcase Junction Temperature Storage Temperature Range Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Document Number 81044 Rev. 2, 20-May-99 x 100 ms x 25 °C Symbol VR IF IFM IFSM PV PV Tj Tstg RthJA RthJC Value 5 100 200 2.5 180 500 100 –55...+100 450 150 Unit V mA mA A mW mW °C °C K/W K/W www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSTA7100 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise Time Test Conditions IF = 100 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp 20 ms IF = 100 mA, tp 20 ms IF = 100 mA x x x Symbol VF V(BR) Cj Ie Typ 1.4 tr 20 50 10 –0.7 ±5 875 80 300 Unit V V pF mW/sr mW %/K deg nm nm ns tf 300 ns 20 fe lp Dl x x Max 1.8 5 TKfe ϕ IF = 100 mA IF = 100 mA IF = 1.5 A, tp/T = 0.01, tp 10 ms IF = 1.5 A, tp/T = 0.01, tp 10 ms Fall Time Min Typical Characteristics (Tamb = 25_C unless otherwise specified) 125 RthJC 500 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 600 400 300 200 RthJA 100 100 RthJC 75 50 RthJA 25 0 0 0 12790 25 50 75 100 125 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (6) 0 94 7971 e 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 81044 Rev. 2, 20-May-99 TSTA7100 Vishay Telefunken 1000 I e – Radiant Intensity ( mW/sr ) I F – Forward Current ( A ) 101 IFSM = 2.5 A ( Single Pulse ) tp / T = 0.01 100 0.05 0.1 0.2 100 tp = 10 ms tp / T = 0.001 10 0.5 10–1 1 10–2 94 8003 e 10–1 100 101 tp – Pulse Duration ( ms ) 102 100 Figure 3. Pulse Forward Current vs. Pulse Duration 1000 tp = 100 ms tp / T = 0.001 103 Fe – Radiant Power ( mW ) IF – Forward Current ( mA ) 104 Figure 6. Radiant Intensity vs. Forward Current 104 102 101 100 10 1 0.1 0 1 2 4 3 VF – Forward Voltage ( V ) 94 8005 e 100 101 102 103 IF – Forward Current ( mA ) 94 7972 e Figure 4. Forward Current vs. Forward Voltage 104 Figure 7. Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA I e rel ; Fe rel V Frel – Relative Forward Voltage 101 102 103 IF – Forward Current ( mA ) 94 7958 e 1.0 IF = 20 mA 0.8 0.9 0.4 0.8 0.7 0 94 7990 e 20 40 60 80 Tamb – Ambient Temperature ( °C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81044 Rev. 2, 20-May-99 0 –10 0 10 100 94 8020 e 50 100 140 Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 3 (6) TSTA7100 Vishay Telefunken 0° I e rel – Relative Radiant Intensity Fe – Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 0 780 94 8000 e IF = 100 mA Fe ( l ) rel = Fe ( l ) / Fe ( lp ) 880 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 980 l – Wavelength ( nm ) Figure 9. Relative Radiant Power vs. Wavelength www.vishay.de • FaxBack +1-408-970-5600 4 (6) 10 ° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8019 e Figure 10. Relative Radiant Intensity vs. Angular Displacement Document Number 81044 Rev. 2, 20-May-99 TSTA7100 Vishay Telefunken Dimensions in mm 96 12174 Document Number 81044 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) TSTA7100 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 81044 Rev. 2, 20-May-99