TSSP4400 GaAs/GaAlAs Infrared Emitting Diode in Sideview Package Description TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue– grey tinted plastic package with spherical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors. Features D D D D D D High radiant power and high radiant intensity Suitable for high pulse current operation Low forward voltage Angle of half intensity ϕ = ± 22° 94 8491 Peak wavelength lp = 925 nm High reliability Applications High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN photodiodes or phototransistors. Infrared remote control and free air transmission systems for long transmission distance and medium wide angle requirements in combination with PIN photo diodes or photo modules. Suitable as replacement of CQX47. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 Test Conditions tp/T=0.5, tp=100 ms tp=100 ms t x 5sec, 2 mm from case Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.0 170 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W 1 (5) TSSP4400 Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Test Conditions IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Symbol VF VF TKVF IR Cj Ie Ie Typ 1.3 2.4 –1.3 Max 1.8 3.2 100 30 23 300 18 –0.8 ±22 925 50 0.2 800 500 800 500 10 fe TKfe ϕ lp Dl IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Fall Time Min TKlp tr tr tf tf Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) 125 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 250 200 150 RthJA 100 50 100 75 50 25 0 0 0 94 8029 e 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature 2 (5) 0 94 7941 e 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 TSSP4400 1000 I e – Radiant Intensity ( mW/sr ) I F – Forward Current ( A ) 101 tp / T = 0.01, IFM = 2 A 0.02 100 0.05 0.1 0.2 100 10 1 0.5 10–1 10–2 94 7947 e 0.1 10–1 100 101 tp – Pulse Duration ( ms ) 102 100 94 8189 e Figure 3. Pulse Forward Current vs. Pulse Duration 1000 Fe – Radiant Power ( mW ) IF – Forward Current ( mA ) 104 Figure 6. Radiant Intensity vs. Forward Current 104 103 102 tp = 100 ms tp / T = 0.001 101 100 100 10 1 0.1 0 1 2 4 3 VF – Forward Voltage ( V ) 94 7952 e 100 101 102 103 IF – Forward Current ( mA ) 94 7965 e Figure 4. Forward Current vs. Forward Voltage 104 Figure 7. Radiant Power vs. Forward Current 1.6 1.2 1.1 1.2 IF = 10 mA I e rel ; Fe rel V Frel – Relative Forward Voltage 101 102 103 IF – Forward Current ( mA ) 1.0 IF = 20 mA 0.8 0.9 0.4 0.8 0.7 0 94 7990 e 20 40 60 80 Tamb – Ambient Temperature ( °C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 0 –10 0 10 100 94 7993 e 50 100 140 Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature 3 (5) TSSP4400 0° I e rel – Relative Radiant Intensity Fe rel – Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° IF = 100 mA 0 875 12757 925 975 l – Wavelength ( nm ) Figure 9. Relative Radiant Power vs. Wavelength 0.6 0.4 0.2 0 0.2 0.6 0.4 94 7966 e Figure 10. Relative Radiant Intensity vs. Angular Displacement Dimensions in mm 95 11325 4 (5) TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 TSSP4400 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 5 (5)