Order this document by MRFIC2006/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line The MRFIC2006 is an Integrated PA designed for linear operation in the 800 MHz to 1.0 GHz frequency range. The design utilizes Motorola’s advanced MOSAIC 3 silicon bipolar RF process to yield superior performance in a cost effective monolithic device. Applications for the MRFIC2006 include CT-1 and CT-2 cordless telephones, remote controls, video and audio short range links, low cost cellular radios, and ISM band transmitters. 900 MHz 2 STAGE PA SILICON MONOLITHIC INTEGRATED CIRCUIT • 50 Ω Input and Output Impedance • Typical Gain = 23 dB @ 900 MHz • Bias Current Externally Adjustable • Bias Pin can be used to Ramp or Disable • Class A or AB Linear Operation • Unconditionally Stable • SO-8 Leaded Plastic Package • Order MRFIC2006R2 for Tape and Reel. R2 Suffix = 2,500 Units per 12 mm, 13 inch Reel. • Device Marking = M2006 CASE 751-05 (SO-8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Zo = 50 Ω unless otherwise noted) Symbol Value Unit VCC1, VCC2 5.0 Vdc Vbias 6.0 Vdc ICC1, ICC2 100 mA RF Output Power (VCC2 < 4.0 V) Pout +21 dBm RF Output Power (4.0 V < VCC2 ≤ 5.0 V) Rating Supply Voltages Bias Voltage Total Supply Current Pout 53 – 8 VCC2 dBm RF Input Power Pin +10 dBm Operating Ambient Temperature TA – 35 to + 85 °C Tstg – 65 to +150 °C RθJC 63 °C/W Storage and Junction Temperature Thermal Resistance, Junction to Case GND 4 5 RF IN GND 3 6 GND GND 2 RF OUT (VCC2) 1 7 8 VCC1 Vbias Pin Connections and Functional Block Diagram REV 2 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRFIC2006 1 RECOMMENDED OPERATING RANGES Parameter Supply Voltage Ranges Symbol Value Unit VCC1, VCC2 1.8 to 4.0 Vdc Vbias 0 to 5.0 Vdc f 500 to 1000 MHz Bias Voltage Range RF Frequency Range ELECTRICAL CHARACTERISTICS (VCC1, VCC2, Vbias = 3.0 V, TA = 25°C, f = 900 MHz, Zo = 50 Ω unless otherwise noted) Characteristics (1) Min Typ Max Unit Supply Current — Total ICC1 ICC2 I Bias — — — — 46 14 29 3.0 55 — — — mA mA mA mA Small Signal Gain 19 23 26 dB Input Return Loss, RF IN Port — 15 — dB Output Return Loss, RF OUT Port — 15 — dB Reverse Isolation — 35 — dB +12 +15.5 — dBm 3rd Order Intercept Point (Out) — + 25 — dBm 5th Order Intercept Point (Out) — + 21 — dBm Output Power at 1.0 dB Gain Compression NOTE: 1. All electrical characteristics measured in test circuit schematic shown in Figure 1 below. C1 RF IN 50 Ω 4 5 3 6 DUT 7 2 8 1 C3 L1 C2 RF OUT 50 Ω R1 L2 VCC1 + – Vbias + – C1, C2 — 100 pF Chip Capacitor C3, C5 — 1.0 nF Chip Capacitor C4 — 10 nF Chip Capacitor L1 — 150 nH Chip Inductor L2 — 10 nH Chip Inductor C4 VCC2 + – C5 R1 — Resistor Optional RF Connectors — SMA Type Board Material — Epoxy/Glass εr = 4.5, Dielectric Thickness = 0.014″ (0.36 mm) Figure 1. Typical Biasing Configuration MRFIC2006 2 MOTOROLA RF DEVICE DATA Table 1. Scattering Parameters for 900 MHz Two – Stage PA (VCC1, VCC2, VBIAS = 3 V, I = 49 mA, TA = 25°C, 50 W System) f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.739 –16.67 3.785 51.56 0.003 –163.12 0.461 –89.23 100 0.702 –24.53 5.772 46.52 0.001 15.96 0.354 –117.30 150 0.671 –33.09 7.901 40.16 0.001 84.34 0.263 –144.77 200 0.649 –41.55 10.065 32.12 0.001 –165.89 0.208 –167.08 250 0.630 –49.79 12.287 23.06 0.002 –159.68 0.169 170.65 300 0.610 –58.60 14.576 12.25 0.002 171.75 0.136 145.40 350 0.592 –67.09 16.834 1.32 0.003 –160.23 0.113 113.52 400 0.567 –75.32 19.009 –10.72 0.005 –167.93 0.105 73.18 450 0.537 –83.69 20.901 –23.88 0.005 167.71 0.122 33.86 500 0.495 –91.79 22.237 –37.89 0.007 159.88 0.157 2.30 525 0.470 –95.35 22.626 –45.02 0.007 168.37 0.178 –10.93 550 0.448 –98.65 22.821 –52.22 0.010 162.65 0.196 –22.73 575 0.421 –101.69 22.834 –59.20 0.009 159.52 0.216 –32.62 600 0.397 –104.40 22.647 –66.13 0.010 155.15 0.233 –42.62 625 0.371 –106.50 22.299 –73.01 0.011 151.24 0.246 –50.98 650 0.349 –108.28 21.813 –79.43 0.011 148.14 0.258 –59.21 675 0.329 –109.85 21.204 –85.70 0.012 145.35 0.269 –66.61 700 0.310 –111.02 20.538 –91.62 0.012 140.66 0.273 –73.29 725 0.293 –111.65 19.824 –97.20 0.014 136.88 0.280 –79.97 750 0.278 –112.24 19.094 –102.54 0.014 136.98 0.281 –85.86 775 0.265 –112.60 18.334 –107.76 0.014 134.67 0.285 –91.50 800 0.252 –112.81 17.594 –112.54 0.016 133.71 0.284 –96.72 825 0.242 –113.50 16.880 –117.13 0.015 129.16 0.282 –102.24 850 0.233 –114.93 16.127 –122.44 0.017 131.80 0.281 –107.68 875 0.224 –115.32 15.438 –126.92 0.017 126.66 0.279 –112.88 900 0.216 –116.04 14.796 –130.89 0.017 127.06 0.275 –117.56 925 0.210 –116.66 14.165 –134.57 0.018 121.77 0.273 –120.85 950 0.203 –117.91 13.555 –138.19 0.019 122.40 0.269 –125.53 975 0.195 –118.87 13.009 –141.73 0.019 120.80 0.265 –129.73 1000 0.191 –120.47 12.515 –145.08 0.019 122.53 0.265 –132.68 1025 0.186 –122.39 12.004 –148.23 0.020 119.56 0.259 –137.22 1050 0.179 –124.03 11.517 –151.36 0.022 115.24 0.254 –140.85 1075 0.175 –126.22 11.063 –154.40 0.022 117.88 0.251 –144.69 1100 0.168 –128.77 10.634 –157.40 0.024 112.04 0.248 –148.25 1125 0.163 –131.41 10.228 –160.15 0.023 112.42 0.246 –151.75 1150 0.161 –133.93 9.841 –163.04 0.023 115.77 0.245 –155.28 1175 0.155 –136.68 9.479 –165.88 0.025 110.34 0.241 –158.69 1200 0.152 –140.85 9.125 –168.50 0.025 109.94 0.241 –161.95 MOTOROLA RF DEVICE DATA MRFIC2006 3 TYPICAL CHARACTERISTICS 28 28 TA = 25°C VCC1, VCC2, Vbias = 3 V 26 26 VCC1, VCC2, Vbias = 4 V 24 G, GAIN (dB) G, GAIN (dB) 3V TA = – 35°C 24 25°C + 85°C 2V 22 22 20 20 500 600 700 800 f, FREQUENCY (MHz) 900 18 500 1000 Figure 2. Gain versus Frequency 900 1000 25 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 700 800 f, FREQUENCY (MHz) Figure 3. Gain versus Frequency 20 15 TA = – 35°C 85°C 10 25°C f = 900 MHz VCC1, VCC2, Vbias = 3 V 5 0 – 20 –15 –10 –5 Pin, INPUT POWER (dBm) 0 20 VCC1, VCC2, Vbias = 4 V 15 3V 2V 10 f = 900 MHz TA = 25°C 5 0 – 20 5 –15 –10 –5 Pin, INPUT POWER (dBm) 0 5 Figure 5. Output Power versus Input Power Figure 4. Output Power versus Input Power 0 –5 TA = 25°C –10 VCC1, VCC2, Vbias = 2 V –15 3V – 20 500 600 700 800 f, FREQUENCY (MHz) TA = 25°C –10 VCC1, VCC2, Vbias = 2 V 3V – 20 4V 4V 900 Figure 6. Input Return Loss versus Frequency MRFIC2006 4 ORL, OUTPUT RETURN LOSS (dB) 0 IRL, INPUT RETURN LOSS (dB) 600 1000 – 30 500 600 700 800 f, FREQUENCY (MHz) 900 1000 Figure 7. Output Return Loss versus Frequency MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 35 η , POWER ADDED EFFICIENCY (%) REV ISO, REVERSE ISOLATION (dB) – 30 – 35 VCC1, VCC2, Vbias = 2 V 4V – 40 3V TA = 25°C – 45 – 50 500 600 700 800 f, FREQUENCY (MHz) 900 VCC1, VCC2, Vbias = 2 V 30 25 20 3V 15 4V 5 0 1000 10 12 14 16 Pout, OUTPUT POWER (dBm) 18 20 Figure 9. Power Added Efficiency versus Output Power 17 Po 1 dB, OUTPUT POWER AT 1 dB GAIN COMPRESSION (dBm) Po 1 dB, OUTPUT POWER AT 1 dB GAIN COMPRESSION (dBm) Figure 8. Reverse Isolation versus Frequency 20 TA = 85°C 16 25°C VCC1, VCC2, Vbias = 4 V 3V 16 – 35°C 15 TA = 25°C 12 14 VCC1, VCC2, Vbias = 3 V 13 500 600 700 800 f, FREQUENCY (MHz) 900 1000 2V 8 500 Figure 10. Output Power at 1 dB Gain Compression versus Frequency 700 800 f, FREQUENCY (MHz) 900 1000 30 Pout , OUTPUT POWER (dBm) TA = + 85°C 10 0 – 35°C VCC1, VCC2 = 3 V Pin = 0 dBm f = 900 MHz –10 VCC1, VCC2 = 4 V 20 2V 3V 10 0 –10 25°C – 20 – 30 600 Figure 11. Output Power at 1 dB Gain Compression versus Frequency 20 Pout , OUTPUT POWER (dBm) TA = 25°C f = 900 MHz 10 TA = 25°C Pin = 0 dBm f = 900 MHz – 20 0 1 2 3 Vbias, BIAS VOLTAGE (V) 4 Figure 12. Output Power versus Bias Voltage MOTOROLA RF DEVICE DATA 5 – 30 0 1 2 3 Vbias, BIAS VOLTAGE (V) 4 5 Figure 13. Output Power versus Bias Voltage MRFIC2006 5 TYPICAL CHARACTERISTICS 100 ICC1 + ICC2 , SUPPLY CURRENT (mA) ICC1 + ICC2 , SUPPLY CURRENT (mA) 100 80 60 TA = + 85°C 40 25°C – 35°C 20 VCC1, VCC2 = 3 V 0 0 1 2 3 Vbias, BIAS VOLTAGE (V) 4 80 60 VCC1, VCC2 = 4 V 40 3V 20 TA = 25°C 0 5 2V 0 Figure 14. Supply Current versus Bias Voltage 1 2 3 Vbias, BIAS VOLTAGE (V) 4 5 Figure 15. Supply Current versus Bias Voltage 7 I BIAS, BIAS CURRENT (mA) 6 5 4 TA = + 85°C 3 – 35°C 25°C 2 1 0 VCC1, VCC2 = 2 V TO 4 V 0 1 2 3 Vbias, BIAS VOLTAGE (V) 4 5 Figure 16. Bias Current versus Bias Voltage MRFIC2006 6 MOTOROLA RF DEVICE DATA APPLICATIONS INFORMATION DESIGN PHILOSOPHY The MRFIC2006 was designed for low cost and flexibility. Low cost was achieved by minimizing external components and using an SOIC package. Flexibility was achieved by allowing the bias current to be externally adjustable resulting in a broad range of output power capability. The bias pin can be ramped to reduce AM splatter in TDD/TDMA systems and can be used to trim the RF output power. THEORY OF OPERATION The input port is internally matched to 50 ohms. Return loss is typically 15 –16 dB in the 800 –1000 MHz range. The output port is nearly 50 ohms but is an open collector and therefore requires an external bias inductor. Using an RF choke will result in a 11–12 dB output return loss. However, a 10 nH inductor will improve it to 15 – 20 dB. A 10 nH inductor is small enough in value to be printed on the board. DC blocks are required on the input and output. Values of 100 pF are recommended. Supply decoupling must be done as close to the IC as possible. A 1000 pF capacitor is recommended. A series RF choke is recommended to keep the RF signal off the supply line. A 10 nF decoupling capacitor is recommended on the Vbias line but does not need to be very close to the IC. MOTOROLA RF DEVICE DATA The Vbias pin can be used several ways. Tying it directly to VCC will maximize the bias current which will maximize linearity. Adding a series resistor will reduce the bias current which will improve efficiency. Figure 9 shows the efficiency versus output power with Vbias tied to VCC. The series resistor will cause these curves to shift to the left. The RF output power can be trimmed by using a variable resistor. The Vbias pin can also be used to power down the IC or, in the case of TDD/TDMA systems, to ramp the IC. By applying a linear ramp voltage, such as the one provided by the MRFIC2004, it has been demonstrated to meet the CT2 Common Air Interface splatter specifications. The MRFIC2006 is internally temperature compensated. For input powers of – 5.0 to 0 dBm the output power temperature variation is typically less than 0.2 dB from – 35 to + 85°C. EVALUATION BOARDS Evaluation boards are available for RF Monolithic Integrated Circuits by adding a “TF” suffix to the device type. For a complete list of currently available boards and ones in development for newly introduced product, please contact your local Motorola Distributor or Sales Office. MRFIC2006 7 PACKAGE DIMENSIONS D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C 8 5 0.25 H E M B M 1 4 h B X 45 _ e q A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ CASE 751–05 ISSUE S Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRFIC2006 8 ◊ MRFIC2006/D MOTOROLA RF DEVICE DATA