Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 60 Watts Power Gain = 11.5 dB Efficiency = 53% • Characterized with Series Equivalent Large–Signal D Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 30:1 VSWR @ 28 Vdc, 945 MHz 60 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–01, STYLE 1 (MRF184) G CASE 360C–03, STYLE 1 (MRF184S) S MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage Rating VDSS 65 Vdc Gate–Source Voltage VGS ± 20 Vdc Drain Current — Continuous ID 7 Adc Total Device Dissipation @ TC = 70°C Derate above 70°C PD 118 0.9 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 1.1 °C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 – – Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) IDSS – – 1 µAdc Gate–Source Leakage Current (VGS = 20 V, VDS = 0 V) IGSS – – 1 µAdc Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 V, ID = 1 mAdc) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF184 MRF184S 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 3 4 5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) VDS(on) – 0.65 0.8 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs 2.2 2.6 – s Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Ciss – 83 – pF Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Coss – 44 – pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Crss – 4.3 – pF Common Source Power Gain (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) Gps 11.5 15 – dB Drain Efficiency (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) η 53 60 – % Load Mismatch (VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz, Load VSWR 5:1 at all Phase Angles) ψ ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS VGG R1 C6 R2 No Degradation in Output Power R4 C7 C8 C5 C11 C9 VDD B1 L1 R3 C12 C2 C13 C10 DUT RF INPUT C1 C4 TL2 TL3 TL1 TL4 RF OUTPUT C3 B1 C1 C2, C3, C6, C9 C4 C5, C12 C7, C10 C8, C11 C13 Short RF Bead Fair Rite–2743019447 18 pF Chip Capacitor 43 pF Chip Capacitor 100 pF Chip Capacitor 10 µF, 50 Vdc Electrolytic Capacitor 1000 pF Chip Capacitor 0.1 µF, 50 Vdc Chip Capacitor 250 µF, 50 Vdc Electrolytic Capacitor L1 R1 R2 R3 R4 TL1–TL4 Ckt Board 5 Turns, 20 AWG, IDIA 0.126″ 10 kΩ, 1/4 W Resistor 13 kΩ, 1/4 W Resistor 1.0 kΩ, 1/4 W Chip Resistor 4 x 39 Ω, 1/8 W Chip Resistor Microstrip Line See Photomaster 1/32″ Glass Teflon, εr = 2.55 ARLON–GX–0300–55–22 Figure 1. MRF184 Test Circuit Schematic MRF184 MRF184S 2 MOTOROLA RF DEVICE DATA – 20 IMD, INTERMODULATION DISTORTION (dBc) 3rd ORDER – 30 – 40 5th – 50 7th – 60 VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz IDQ = 400 mA –70 – 80 0 20 30 40 50 Pout, OUTPUT POWER (WATTS PEP) 10 60 70 –15 – 25 IDQ = 100 mA – 35 250 mA 600 mA – 45 – 55 0.1 Figure 2. Intermodulation Distortion versus Output Power Pout , OUTPUT POWER (WATTS) Gpe , POWER GAIN (dB) IDQ = 600 mA 400 mA 250 mA 14 100 mA VDD = 28 Vdc f = 945 MHz 16 Gpe 70 60 50 40 15 30 Pout 20 VDS = 28 Vdc IDQ = 400 mA f = 945 MHz 10 0 1 10 Pout, OUTPUT POWER (WATTS) 0.5 0 100 Figure 4. Power Gain versus Output Power 1.5 1 2 Pin, INPUT POWER (WATTS) 14 3 2.5 Figure 5. Output Power versus Input Power 100 80 P out , OUTPUT POWER (WATTS) Pin = 4.0 W 90 P out , OUTPUT POWER (WATTS) 100 80 16 80 2.0 W 70 60 50 1.0 W 40 30 20 12 14 16 24 20 22 26 28 VDD, SUPPLY VOLTAGE (VOLTS) 18 30 Figure 6. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA 70 60 50 TYPICAL DEVICE SHOWN 40 30 20 VDS = 28 Vdc Pin = 2.0 W f = 945 MHz 10 IDQ = 400 mA f = 945 MHz 10 0 1 10 Pout, OUTPUT POWER (WATTS PEP) Figure 3. Intermodulation Distortion versus Output Power 18 12 VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz 400 mA Gpe , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 32 0 0 0.5 1.5 2 3.5 1 2.5 3 4 VGS, GATE–SOURCE VOLTAGE (VOLTS) 4.5 5 Figure 7. Output Power versus Gate Voltage MRF184 MRF184S 3 TYPICAL CHARACTERISTICS 4 90 3.5 70 Pin = 2.5 W I D, DRAIN CURRENT (mA) P out , OUTPUT POWER (WATTS) 80 60 50 40 VDD = 28 Vdc IDQ = 400 mA SINGLE TONE 30 1.0 W 20 0.5 W 3 2.5 TYPICAL DEVICE SHOWN 2 1.5 1 VDS = 28 Vdc 0.5 10 0 800 0 820 840 860 880 900 920 940 f, FREQUENCY (MHz) 960 980 1000 0 Figure 8. Output Power versus Frequency 1 2 4 3 VGS, GATE VOLTAGE (VOLTS) 5 6 Figure 9. Drain Current versus Gate Voltage 6 140 5.5 100 Ciss 60 20 Crss 0 0 5 15 25 35 40 10 20 30 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 45 2 1.5 1 0.5 0 50 TJ = 150°C TF = 70°C 0 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 15 25 10 20 VDS, DRAIN VOLTAGE (Vdc) 30 65 16 η 15.5 5 10 20 15 25 VDS, DRAIN VOLTAGE (Vdc) 30 Figure 12. DC Safe Operating Area MRF184 MRF184S 4 35 60 55 15 Gpe 14.5 50 14 45 13.5 TJ = 175°C TF = 70°C 0 35 Figure 11. DC Safe Operating Area Gpe, POWER GAIN (dB) I D, DRAIN CURRENT (AMPS) Figure 10. Capacitance versus Voltage 5 13 880 VDD = 28 Vdc IDQ = 400 mA Pout = 60 W (CW) 900 40 VSWR 940 920 f, FREQUENCY (MHz) 960 35 980 2.5 η , EFFICIENCY (%) VGS = 0 Vdc f = 1.0 MHz 2.5 1.5 2.0 INPUT VSWR 40 Coss 5 4.5 4 3.5 3 1.0 80 I D, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 120 Figure 13. Performance in Broadband Circuit MOTOROLA RF DEVICE DATA 60 P out , OUTPUT POWER (dBm) 50 40 FUNDAMENTAL 30 20 10 0 3rd ORDER –10 VDS = 26 Vdc ID = 2.1 A f1 = 945 MHz f2 = 945.1 MHz – 20 – 30 – 40 10 15 25 20 30 Pin, INPUT POWER (dBm) 35 40 Figure 14. Class A Third Order Intercept Point R1 C10 B1 C8 C7 C6 C5 C9 R4 C11 C12 R2 R3 C2 C13 L1 C1 C4 TL2 TL3 TL1 TL4 C3 XRF184 Figure 15. Component Parts Layout MOTOROLA RF DEVICE DATA MRF184 MRF184S 5 Zin 900 800 f = 1000 MHz 950 850 f = 1000 MHz 950 Z0 = 10 Ω 900 850 800 ZOL* VDD = 28 Vdc, IDQ = 100 mA, Pout = 60 W f MHz Zin Ohms ZOL* Ohms 800 0.40 + j0.90 1.85 – j1.00 850 0.45 + j1.10 1.75 – j0.90 900 0.52 + j1.20 1.70 – j0.75 950 0.60 + j1.30 1.60 – j0.50 1000 0.70 + j1.38 1.57 – j0.40 Zin = Conjugate of source impedance. Zout = Conjugate of the load impedance at given output ZOL* = power, voltage, frequency and efficiency. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability. Figure 16. Series Equivalent Input and Output Impedance MRF184 MRF184S 6 MOTOROLA RF DEVICE DATA Table 1. Common Source S–Parameters (VDS = 13.5 V) ID = 2.0 A f MHz S11 S21 ∠φ S12 S22 |S11| 0.916 179 |S21| 10.88 ∠φ 20 80 |S12| 0.014 –22 ∠φ |S22| 0.843 175 ∠φ 30 0.917 178 9.26 79 0.014 –25 0.847 174 40 0.918 177 8.10 78 0.015 –29 0.852 174 50 0.919 176 7.16 77 0.015 –33 0.853 174 100 0.919 175 4.57 75 0.015 –35 0.855 173 150 0.920 174 3.34 67 0.015 –38 0.865 173 200 0.921 173 2.60 62 0.014 –41 0.867 173 250 0.922 173 2.11 59 0.014 –45 0.877 173 300 0.928 172 1.77 55 0.014 –49 0.881 173 350 0.938 172 1.50 50 0.013 –55 0.887 173 400 0.941 171 1.28 47 0.013 –59 0.895 173 450 0.942 171 1.12 44 0.012 –62 0.896 173 500 0.943 171 1.00 41 0.012 –68 0.898 172 550 0.945 171 0.91 38 0.010 –75 0.899 172 600 0.947 171 0.80 35 0.010 –79 0.903 172 650 0.948 171 0.71 33 0.009 –85 0.905 172 700 0.955 170 0.65 30 0.008 –88 0.909 172 750 0.959 170 0.60 28 0.008 –95 0.919 172 800 0.962 169 0.55 25 0.007 –102 0.922 172 850 0.963 169 0.50 23 0.007 –111 0.923 171 900 0.964 169 0.45 21 0.007 –118 0.926 171 950 0.968 169 0.43 19 0.006 –125 0.929 171 1000 0.970 169 0.39 18 0.006 –129 0.933 171 1050 0.971 168 0.36 17 0.005 –134 0.935 171 1100 0.972 168 0.34 14 0.005 –142 0.936 170 1150 0.973 168 0.32 13 0.005 –149 0.938 170 1200 0.974 167 0.29 12 0.006 –156 0.940 169 1250 0.976 167 0.28 10 0.007 –162 0.943 169 1300 0.975 167 0.26 9 0.008 –173 0.945 168 1350 0.972 166 0.25 8 0.009 –178 0.946 167 1400 0.969 166 0.24 7 0.011 175 0.947 167 1450 0.965 165 0.22 6 0.012 172 0.948 167 1500 0.959 164 0.21 5 0.013 169 0.950 167 MOTOROLA RF DEVICE DATA MRF184 MRF184S 7 Table 2. Common Source S–Parameters (VDS = 28 V) ID = 2.0 A f MH MHz S11 S21 ∠φ S12 S22 |S11| 0.912 –170 |S21| 16.01 ∠φ 20 84 |S12| 0.016 –12 ∠φ |S22| 0.746 178 ∠φ 30 0.917 –173 13.73 82 0.015 –15 0.755 177 40 0.918 –174 12.02 80 0.014 –17 0.759 177 50 0.919 –176 10.62 78 0.013 –20 0.766 176 100 0.922 –178 6.76 71 0.012 –22 0.775 176 150 0.930 177 4.92 65 0.011 –25 0.791 176 200 0.931 176 3.82 60 0.010 –27 0.791 176 250 0.933 175 3.07 55 0.009 –29 0.793 176 300 0.941 174 2.53 51 0.009 –31 0.826 176 350 0.943 173 2.14 45 0.008 –35 0.834 176 400 0.945 172 1.83 41 0.008 –45 0.853 176 450 0.948 172 1.58 38 0.007 –52 0.858 176 500 0.950 172 1.39 35 0.007 –57 0.865 176 550 0.955 172 1.24 32 0.007 –61 0.876 176 600 0.960 172 1.10 29 0.006 –64 0.882 176 650 0.965 171 0.96 26 0.006 –68 0.888 175 700 0.967 171 0.89 24 0.006 –71 0.894 175 750 0.970 171 0.80 20 0.005 –73 0.904 175 800 0.973 170 0.73 18 0.005 –78 0.906 175 850 0.974 169 0.66 17 0.004 –83 0.908 174 900 0.975 169 0.61 13 0.004 –91 0.909 173 950 0.976 169 0.57 12 0.004 –94 0.915 173 1000 0.978 168 0.52 11 0.004 –96 0.916 173 1050 0.979 168 0.47 9 0.005 –102 0.919 172 1100 0.980 168 0.43 7 0.005 –115 0.924 172 1150 0.980 167 0.41 6 0.006 –119 0.931 171 1200 0.979 167 0.38 5 0.006 –125 0.934 170 1250 0.978 167 0.36 2 0.006 –139 0.935 170 1300 0.974 167 0.34 1 0.007 –148 0.936 170 1350 0.971 166 0.32 0 0.007 –156 0.937 169 1400 0.970 165 0.31 –1 0.007 –165 0.938 169 1450 0.969 165 0.30 –2 0.008 –171 0.939 169 1500 0.965 164 0.27 –3 0.008 –178 0.946 169 MRF184 MRF184S 8 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. G 1 –B– 3 Q 2 PL 2 K 0.25 (0.010) D E H T A M B M C F N M –T– SEATING PLANE DIM A B C D E F G H K N Q INCHES MIN MAX 0.790 0.810 0.220 0.240 0.125 0.175 0.205 0.225 0.050 0.070 0.004 0.006 0.562 BSC 0.070 0.090 0.215 0.255 0.350 0.370 0.120 0.140 MILLIMETERS MIN MAX 20.07 20.57 5.59 6.09 3.18 4.45 5.21 5.71 1.27 1.77 0.11 0.15 14.27 BSC 1.78 2.29 5.47 6.47 8.89 9.39 3.05 3.55 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE –A– CASE 360B–01 ISSUE O (MRF184) 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– 2 K E DIM A B C D E F H K N D N F H 3 C –T– SEATING PLANE INCHES MIN MAX 0.370 0.390 0.220 0.240 0.105 0.155 0.205 0.225 0.035 0.045 0.004 0.006 0.067 0.057 0.085 0.115 0.350 0.370 MILLIMETERS MIN MAX 9.40 9.91 5.59 6.09 2.67 3.94 5.21 5.71 0.89 1.14 0.11 0.15 1.70 1.45 2.16 2.92 8.89 9.39 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE –A– CASE 360C–03 ISSUE B (MRF184S) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MOTOROLA RF DEVICE DATA ◊ MRF184/D MRF184 MRF184S 9