MOTOROLA MRF9045M

MOTOROLA
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by MRF9045M/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
MRF9045M
MRF9045MR1
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device
make it ideal for large–signal, common–source amplifier applications in 28 volt
base station equipment.
• Typical Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 18.5 dB
Efficiency – 41% (Two Tones)
IMD – –31 dBc
• Integrated ESD Protection
• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance
Parameters
• Moisture Sensitivity Level 3
• RF Power Plastic Surface Mount Package
• Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
945 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265–06, STYLE 1
(TO–270)
PLASTIC
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
+ 15, – 0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
156(1)
1.25(1)
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
150
°C
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Typical)
Machine Model
M2 (Typical)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.8(1)
°C/W
(1) Simulated
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 2000
MRF9045M MRF9045MR1
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
4
—
S
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
74
—
pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
—
39
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.9
—
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
(continued)
MRF9045M MRF9045MR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
17
18.5
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
38
41
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
–31
–28
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
9
15
—
dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
18.5
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
41
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
–31
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
13
—
dB
FUNCTIONAL TESTS (In Motorola Test Fixture)
MOTOROLA RF DEVICE DATA
MRF9045M MRF9045MR1
3
B2
B1
VGG
+
C6
C7
+
C15
C14
L1
RF
INPUT Z1
Z3
Z4
Z5
Z6
C9
Z7
C2
B1, B2
C1, C7, C13, C14
C2, C8
C3
C4, C5, C8, C9
C6
C10
C11
C12
C17
L1, L2
Z1
Z2
+
VDD
C17
L2
C5
C1 Z2
+
C16
Z8
C4
C3
Z9
Z10
C8
DUT
Short Ferrite Beads, Surface Mount
47 pF, Chip Capacitors, B Case
2.7 pF, Chip Capacitors, B Case
3.9 pF, Chip Capacitor, B Case
10 pF, Chip Capacitors, B Case
10 µF, 35 V Tantalum Surface Mount Capacitor
2.2 pF, Chip Capacitor, B Case
4.7 pF, Chip Capacitor, B Case
1.2 pF, Chip Capacitor, B Case
220 µF, 50 V Electrolytic Capacitor
12.5 nH, Inductors
0.20″ x 0.08″
0.57″ x 0.12″
Z12 C13
Z11
C10
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
C11
RF
OUTPUT
Z13
C12
0.14″ x 0.32″
0.47″ x 0.32″
0.16″ x 0.32″ x 0.62″ Tapered
0.18″ x 0.62″
0.56″ x 0.62″
0.33″ x 0.32″
0.14″ x 0.32″
0.36″ x 0.08″
1.01″ x 0.08″
0.15″ x 0.08″
0.29″ x 0.08″
Figure 1. 945 MHz Broadband Test Circuit Schematic
C6
C17
Vbias
Vsupply
B1
B2
C7
C2
C3
Ground
C4
WB2
C1
CUT OUT AREA
A1
C15 C16
C14
L2
C5
WB1
L1
C9
C8
A2
C10 C11
C12 C13
MRF9045M
Ground
Figure 2. 945 MHz Broadband Test Circuit Components Layout
MRF9045M MRF9045MR1
4
MOTOROLA RF DEVICE DATA
VDD = 28 Vdc
Pout = 45 Watts (PEP)
IDQ = 350 mA
Two–Tone Measurement
100 kHz Tone Spacing
35
30
IRL
25
–15
Gps
20
–25
15
IMD3
10
5
–35
900
920
940
960
980
1000
0
50
–10
40
30
20
–20
IRL
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
–30
Gps
–40
h
–50
10
–60
0
0.5
1
10
100
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Class AB Test Circuit Performance
Figure 4. Power Gain, Efficiency and IRL versus
Output Power
–30
IMD, INTERMODULATION DISTORTION (dBc)
–25
IDQ = 200 mA
–35
–40
IDQ = 350 mA
–45
IDQ = 500 mA
VDD = 28 Vdc
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
–55
1
10
–25
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement,
100 kHz Tone Spacing
–30
–35
–40
3rd Order
–45
5th Order
–50
–55
7th Order
–60
–65
–70
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
Gps
50
15
40
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
30
h
20
10
10
0
1
10
100
P out , OUTPUT POWER (WATTS) PEP
60
20
5
0.5
–20
100
h, DRAIN EFFICIENCY (%)
–50
–60
0.5
G ps , POWER GAIN (dB)
60
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
Pin = 1 W
Pin = 0.6 W
Pin = 0.3 W
22
24
26
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
28
30
32
Pout, OUTPUT POWER (WATTS CW)
VDD, DRAIN VOLTAGE (VOLTS)
Figure 7. CW Power Gain and Drain Efficiency
versus Output Power
Figure 8. Output Voltage versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF9045M MRF9045MR1
5
IRL, INPUT RETURN LOSS (dB)
40
h , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
h
45
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATIONDISTORTION (dBc)
–5
50
IMD, INTERMODULATION DISTORTION (dBc)
h , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Zo = 10 Ω
Zin
ZOL*
f = 930 MHz
f = 930 MHz
f = 945 MHz
f = 945 MHz
VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP)
f
MHz
Zin
ZOL*
Ω
Zin
Ω
930
0.81 + j0.25
2.03 – j0.09
945
0.85 + j0.05
2.03 – j0.28
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
Note:
ZOL* was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Input
Matching
Network
Output
Matching
Network
Device
Under Test
Z
in
Z
*
OL
Figure 9. Series Equivalent Input and Output Impedance
MRF9045M MRF9045MR1
6
MOTOROLA RF DEVICE DATA
E1
2X
2X
B
D3
PACKAGE DIMENSIONS
PIN ONE ID
D1
2X
b1
E
A
aaa
M
D A
aaa
D
M
D A
E4
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
E3
PIN 2
D2
PIN 3
EXPOSED
HEATSINK AREA
PIN 1
H
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
F
b1
c1
aaa
INCHES
MIN
MAX
.076
.084
.038
.044
.040
.042
.416
.424
.376
.384
.290
.320
.016
.024
.436
.444
.236
.244
.066
.074
.150
.180
.058
.066
.025 BSC
.193
.199
.007
.011
.004
MILLIMETERS
MIN
MAX
1.93
2.13
0.96
1.12
1.02
1.07
10.57
10.77
9.55
9.75
7.37
8.13
0.41
0.61
11.07
11.28
5.99
6.20
1.68
1.88
3.81
4.57
1.47
1.68
0.64 BSC
4.90
5.06
0.18
0.28
0.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
DATUM
PLANE
NOTE 7
A1
A2
A
c1
BOTTOM VIEW
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M–1994.
3. DATUM PLANE –H– IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1” AND “E1” DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1” AND “E1” DO
INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE –H–.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS –A– AND –B– TO BE DETERMINED AT
DATUM PLANE –H–.
7. DIMENSION A2 APPLIES WITHIN ZONE “J” ONLY.
2X
F
E2
D
ZONE J
CASE 1265–06
ISSUE E
(TO–270)
MOTOROLA RF DEVICE DATA
MRF9045M MRF9045MR1
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF9045M MRF9045MR1
8
MOTOROLA RF DEVICE DATA
MRF9045M/D