MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–source amplifier applications in 28 volt base station equipment. • Typical Performance at 945 MHz, 28 Volts Output Power – 45 Watts PEP Power Gain – 18.5 dB Efficiency – 41% (Two Tones) IMD – –31 dBc • Integrated ESD Protection • Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Moisture Sensitivity Level 3 • RF Power Plastic Surface Mount Package • Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 945 MHz, 45 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 1265–06, STYLE 1 (TO–270) PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS + 15, – 0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 156(1) 1.25(1) Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 150 °C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M2 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.8(1) °C/W (1) Simulated NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 RF DEVICE DATA MOTOROLA Motorola, Inc. 2000 MRF9045M MRF9045MR1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) — 3.7 — Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 4 — S Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss — 74 — pF Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss — 39 — pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 1.9 — pF OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (continued) MRF9045M MRF9045MR1 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two–Tone Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18.5 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 38 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — –31 –28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL 9 15 — dB Two–Tone Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 18.5 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — –31 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — 13 — dB FUNCTIONAL TESTS (In Motorola Test Fixture) MOTOROLA RF DEVICE DATA MRF9045M MRF9045MR1 3 B2 B1 VGG + C6 C7 + C15 C14 L1 RF INPUT Z1 Z3 Z4 Z5 Z6 C9 Z7 C2 B1, B2 C1, C7, C13, C14 C2, C8 C3 C4, C5, C8, C9 C6 C10 C11 C12 C17 L1, L2 Z1 Z2 + VDD C17 L2 C5 C1 Z2 + C16 Z8 C4 C3 Z9 Z10 C8 DUT Short Ferrite Beads, Surface Mount 47 pF, Chip Capacitors, B Case 2.7 pF, Chip Capacitors, B Case 3.9 pF, Chip Capacitor, B Case 10 pF, Chip Capacitors, B Case 10 µF, 35 V Tantalum Surface Mount Capacitor 2.2 pF, Chip Capacitor, B Case 4.7 pF, Chip Capacitor, B Case 1.2 pF, Chip Capacitor, B Case 220 µF, 50 V Electrolytic Capacitor 12.5 nH, Inductors 0.20″ x 0.08″ 0.57″ x 0.12″ Z12 C13 Z11 C10 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 C11 RF OUTPUT Z13 C12 0.14″ x 0.32″ 0.47″ x 0.32″ 0.16″ x 0.32″ x 0.62″ Tapered 0.18″ x 0.62″ 0.56″ x 0.62″ 0.33″ x 0.32″ 0.14″ x 0.32″ 0.36″ x 0.08″ 1.01″ x 0.08″ 0.15″ x 0.08″ 0.29″ x 0.08″ Figure 1. 945 MHz Broadband Test Circuit Schematic C6 C17 Vbias Vsupply B1 B2 C7 C2 C3 Ground C4 WB2 C1 CUT OUT AREA A1 C15 C16 C14 L2 C5 WB1 L1 C9 C8 A2 C10 C11 C12 C13 MRF9045M Ground Figure 2. 945 MHz Broadband Test Circuit Components Layout MRF9045M MRF9045MR1 4 MOTOROLA RF DEVICE DATA VDD = 28 Vdc Pout = 45 Watts (PEP) IDQ = 350 mA Two–Tone Measurement 100 kHz Tone Spacing 35 30 IRL 25 –15 Gps 20 –25 15 IMD3 10 5 –35 900 920 940 960 980 1000 0 50 –10 40 30 20 –20 IRL VDD = 28 Vdc IDQ = 350 mA f = 945 MHz Two–Tone Measurement 100 kHz Tone Spacing –30 Gps –40 h –50 10 –60 0 0.5 1 10 100 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) PEP Figure 3. Class AB Test Circuit Performance Figure 4. Power Gain, Efficiency and IRL versus Output Power –30 IMD, INTERMODULATION DISTORTION (dBc) –25 IDQ = 200 mA –35 –40 IDQ = 350 mA –45 IDQ = 500 mA VDD = 28 Vdc f = 945 MHz Two–Tone Measurement 100 kHz Tone Spacing –55 1 10 –25 VDD = 28 Vdc IDQ = 350 mA f = 945 MHz Two–Tone Measurement, 100 kHz Tone Spacing –30 –35 –40 3rd Order –45 5th Order –50 –55 7th Order –60 –65 –70 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power Gps 50 15 40 VDD = 28 Vdc IDQ = 350 mA f = 945 MHz 30 h 20 10 10 0 1 10 100 P out , OUTPUT POWER (WATTS) PEP 60 20 5 0.5 –20 100 h, DRAIN EFFICIENCY (%) –50 –60 0.5 G ps , POWER GAIN (dB) 60 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 Pin = 1 W Pin = 0.6 W Pin = 0.3 W 22 24 26 IDQ = 350 mA f = 945 MHz Two–Tone Measurement 100 kHz Tone Spacing 28 30 32 Pout, OUTPUT POWER (WATTS CW) VDD, DRAIN VOLTAGE (VOLTS) Figure 7. CW Power Gain and Drain Efficiency versus Output Power Figure 8. Output Voltage versus Supply Voltage MOTOROLA RF DEVICE DATA MRF9045M MRF9045MR1 5 IRL, INPUT RETURN LOSS (dB) 40 h , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) h 45 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATIONDISTORTION (dBc) –5 50 IMD, INTERMODULATION DISTORTION (dBc) h , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Zo = 10 Ω Zin ZOL* f = 930 MHz f = 930 MHz f = 945 MHz f = 945 MHz VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP) f MHz Zin ZOL* Ω Zin Ω 930 0.81 + j0.25 2.03 – j0.09 945 0.85 + j0.05 2.03 – j0.28 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MRF9045M MRF9045MR1 6 MOTOROLA RF DEVICE DATA E1 2X 2X B D3 PACKAGE DIMENSIONS PIN ONE ID D1 2X b1 E A aaa M D A aaa D M D A E4 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ E3 PIN 2 D2 PIN 3 EXPOSED HEATSINK AREA PIN 1 H DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 F b1 c1 aaa INCHES MIN MAX .076 .084 .038 .044 .040 .042 .416 .424 .376 .384 .290 .320 .016 .024 .436 .444 .236 .244 .066 .074 .150 .180 .058 .066 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.93 2.13 0.96 1.12 1.02 1.07 10.57 10.77 9.55 9.75 7.37 8.13 0.41 0.61 11.07 11.28 5.99 6.20 1.68 1.88 3.81 4.57 1.47 1.68 0.64 BSC 4.90 5.06 0.18 0.28 0.10 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE DATUM PLANE NOTE 7 A1 A2 A c1 BOTTOM VIEW NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M–1994. 3. DATUM PLANE –H– IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D1” AND “E1” DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D1” AND “E1” DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE –H–. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS –A– AND –B– TO BE DETERMINED AT DATUM PLANE –H–. 7. DIMENSION A2 APPLIES WITHIN ZONE “J” ONLY. 2X F E2 D ZONE J CASE 1265–06 ISSUE E (TO–270) MOTOROLA RF DEVICE DATA MRF9045M MRF9045MR1 7 Motorola reserves the right to make changes without further notice to any products herein. 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