RG4A to RG4J VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway • Hermetically sealed package 17133 Mechanical Data Case: Sintered glass case, G4 Terminals: Solder plated axial leads, solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 1040 mg Parts Table Part Type differentiation Package RG4A VRRM = 50 V G4 RG4B VRRM = 100 V G4 RG4D VRRM = 200 V G4 RG4G VRRM = 400 V G4 RG4J VRRM = 600 V G4 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Part Symbol Value Unit see electrical characteristics Test condition RG4A VR = VRRM 50 V see electrical characteristics RG4B VR = VRRM 100 V see electrical characteristics RG4D VR = VRRM 200 V see electrical characteristics RG4J VR = VRRM 400 V see electrical characteristics RG1J VR = VRRM 600 V Maximum average forward rectified current 0.375 " (9.5 mm) lead length at Tamb = 55 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 100 A Maximum average reverse current at rated peak reverse voltage Tamb = 25 °C IR(AV) 2.0 µA at rated peak reverse voltage Tamb = 100 °C IR(AV) 100 µA TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Document Number 86076 Rev. 2, 28-Jan-03 www.vishay.com 1 RG4A to RG4J VISHAY Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Typical thermal resistance 1) 1) Symbol Value Unit RθJA 22 K/W Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, with both leads attached to heat sink Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Maximum instantaneous forward voltage IF = 3.0 A Maximum reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical junction capacitance Part Symbol Typ. VF Max Unit 1.3 V IR 5.0 µA RG4A trr 150 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG4B trr 150 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG4D trr 150 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG4G trr 150 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG4J VR = 4.0 V, f = 1 MHz trr 250 CJ ns 50 pF 4.0 200 TA = 55°C 8.3ms Single Half Sine-Wave (JEDEC Method) Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 3.0 2.0 1.0 100 0.375" (9.5mm) Lead Length 0 10 0 grg4a_01 25 50 75 100 125 150 Ambient Temperature (°C) Figure 1. Forward Current Derating Curve www.vishay.com 2 175 1 grg4a_02 100 10 Number of Cycles at 60 HZ Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 86076 Rev. 2, 28-Jan-03 RG4A to RG4J VISHAY Vishay Semiconductors 20 Instantaneous Forward Current (A) 10 1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 0.1 0.01 0.4 0.6 1.0 0.8 1.4 1.2 1.6 Instantaneous Forward Voltage (V) grg4a_03 Figure 3. Typical Instantaneous Forward Characteristics Instantaneous Reverse Current (µA) 10 TJ = 125°C 1 TJ = 75°C 0.1 TJ = 25°C 0.01 20 0 40 60 80 100 Percent of Rated Peak Reverse Voltage (V) grg4a_04 Figure 4. Typical Reverse Characteristics Junction Capacitance (pF) 100 TJ = 25°C f = 1.0 MHZ Vsig, 50mVp-p 50 10 10 1 100 Reverse Voltage (V) grg4a_05 Figure 5. Typical Junction Capacitance Document Number 86076 Rev. 2, 28-Jan-03 www.vishay.com 3 RG4A to RG4J VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 0.180 (4.6) 1.0 (25.4) MIN. 0.115 (2.9) DIA. 0.300 (7.6) MAX. 0.042 (1.07) 0.038 (0.962) DIA. 1.0 (25.4) MIN. 17032 www.vishay.com 4 Document Number 86076 Rev. 2, 28-Jan-03 RG4A to RG4J VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86076 Rev. 2, 28-Jan-03 www.vishay.com 5 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.