S07B / 07D / 07G / 07J / 07M VISHAY Vishay Semiconductors Small Surface Mount Diodes Features • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated 17249 Packaging codes-options: GS18 - 10 K per 13" reel (8 mm tape), 50 K/box GS08 - 3 K per 7" reel (8 mm tape), 30 K/box • High temperature soldering: 260 °C/ 10 seconds at terminals Mechanical Data Case: JEDEC -DO219-AB (SMF®) Plastic case Polarity: Band denotes cathode end Weight: approx. 0.01 g Parts Table Part Marking S07B SB S07D SD S07G SG S07J SJ S07M SM Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Maximum repetitive peak reverse voltage Part Symbol Value Unit S07B VRRM 100 V S07D VRRM 200 V S07G VRRM 400 V S07J VRRM 600 V S07M VRRM 1000 V S07B VRMS 70 V S07D VRMS 140 V S07G VRMS 280 V S07J VRMS 420 V S07M VRMS 700 V S07B VDC 100 V S07D VDC 200 V S07G VDC 400 V S07J VDC 600 V S07M VDC 1000 V Maximum average forward rectified current T = 75 °C1) tp IF(AV) 1.5 A 1) IF(AV) 0.7 A IFSM 25 A Maximum RMS voltage Maximum DC blocking voltage TA = 65 °C Peak forward surge current 8.3 ms single half sine-wave 1) TL = 25 °C Averaged over any 20 ms period Document Number 85733 Rev. 1.8, 24-Mar-04 www.vishay.com 1 S07B / 07D / 07G / 07J / 07M VISHAY Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RθJA 180 K/W TJ, TSTG - 55 to + 150 °C Thermal resistance junction to ambient air2) Operating junction and storage temperature range 2) Mounted on epoxy substrate with 3 x 3 mm CU pads (≥ 40 µm thick) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Maximum instantaneous forward voltage 1.0 A3) Maximum DC reverse current at TA = 25 °C rated DC blocking voltage Reverse recovery time Max Unit VF Min Typ. 1.1 V IR 10 µA TA = 125 °C IR 50 µA IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.8 µs Typical capacitance at 4 V, MHz 3) Symbol 4 Cj pF Pulse test: 300 µ pulse width, 1 % duty cycle Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.2 Instantaneous Forward Current (mA) 1000 Average Forward Current (A) Resistive or Inductive Load 1.0 0.8 0.6 0.4 0.2 3.0 x 3.0mm 40 µm Thick Copper Pad Areas 0 17375 0 20 40 60 80 100 Ambient Temperature (jC) Fig. 1 Forward Current Derating Curve www.vishay.com 2 120 140 TJ = 150°C TJ = 100°C 100 600 160 17376 TJ = 25°C 700 800 900 1000 1100 Instantaneous Forward Voltage (mV) Fig. 2 Typical Instantaneous Forward Characteristics Document Number 85733 Rev. 1.8, 24-Mar-04 S07B / 07D / 07G / 07J / 07M VISHAY Vishay Semiconductors Instantaneous Reverse Current (µA) 100 TJ = 150°C 10 TJ = 125°C TJ = 100°C 1 TJ = 75°C TJ = 50°C 0.1 TJ = 25°C 0.01 0 100 200 300 400 500 600 700 800 900 Instantaneous Reverse Voltage (V) 17377 Fig. 3 Typical Instantaneous Reverse Characteristics 10 9 8 C (pF) 7 6 5 4 3 2 1 0 17378 0 5 10 15 20 VR (V) 25 30 35 40 Fig. 4 Capacitance vs. Reverse Voltage Document Number 85733 Rev. 1.8, 24-Mar-04 www.vishay.com 3 S07B / 07D / 07G / 07J / 07M VISHAY Vishay Semiconductors Package Dimensions in mm Cathode Band T op View 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5 0.05 - 0.30 0.98 ± 0.1 5 Detail Z enlarged Z 0.60 ± 0.25 0.00 - 0.10 3.7 ± 0.2 1.6 1.3 1.4 17247 www.vishay.com 4 Document Number 85733 Rev. 1.8, 24-Mar-04 VISHAY S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Blistertape for SMF PS 18513 Document Number 85733 Rev. 1.8, 24-Mar-04 www.vishay.com 5 S07B / 07D / 07G / 07J / 07M VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 85733 Rev. 1.8, 24-Mar-04