VISHAY VBPW34S

VBPW34S, VBPW34SR
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: GW, RGW
VBPW34S
• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
VBPW34SR
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
and
in
21733
DESCRIPTION
APPLICATIONS
VBPW34S and VBPW34SR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 7.5 mm2 sensitive area
detecting visible and near infrared radiation.
• High speed photo detector
PRODUCT SUMMARY
Ira (µA)
ϕ (deg)
λ0.1 (nm)
VBPW34S
55
± 65
430 to 1100
VBPW34SR
55
± 65
430 to 1100
PACKAGE FORM
COMPONENT
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
VBPW34S
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Gullwing
VBPW34SR
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Reverse gullwing
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Tamb ≤ 25 °C
Power dissipation
Junction temperature
SYMBOL
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Soldering temperature
Acc. reflow solder profile fig. 8
Thermal resistance junction/ambient
Document Number: 81128
Rev. 1.1, 20-Apr-10
For technical questions, contact: [email protected]
www.vishay.com
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VBPW34S, VBPW34SR
Silicon PIN Photodiode
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
TYP.
MAX.
UNIT
1
1.3
IR = 100 µA, E = 0
V(BR)
V
VR = 10 V, E = 0
Iro
2
30
nA
VR = 0 V, f = 1 MHz, E = 0
CD
70
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
MIN.
60
V
pF
VR = 3 V, f = 1 MHz, E = 0
CD
25
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
50
µA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
55
µA
45
40
pF
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
940
nm
λ0.1
430 to 1100
nm
Range of spectral bandwidth
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√Hz
Rise time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tf
100
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
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2
1.4
0
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 81128
Rev. 1.1, 20-Apr-10
VBPW34S, VBPW34SR
Silicon PIN Photodiode
Vishay Semiconductors
S(λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
λ = 950 nm
1
0.8
0.6
0.4
0.2
0
0.1
0.01
0.1
1
10
Ee - Irradiance (mW/cm2)
12787
1.0
350
550
Fig. 3 - Reverse Light Current vs. Irradiance
750
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
Srel - Relative Radiant Sensitivity
Ira - Reverse Light Current (µA)
0.5 mW/cm 2
0.2 mW/cm 2
10
0.1 mW/cm 2
0.05 mW/cm 2
λ = 950 nm
0.1
1
10
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
100
VR - Reverse Voltage (V)
12788
10°
30°
1 mW/cm 2
1
1150
950
λ - Wavelength (nm)
94 8420
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
1000
80°
0.6
0.4
0.2
0
94 8406
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Document Number: 81128
Rev. 1.1, 20-Apr-10
For technical questions, contact: [email protected]
www.vishay.com
3
VBPW34S, VBPW34SR
Silicon PIN Photodiode
Vishay Semiconductors
0.1 -0.1
0.15 ± 0.02
1.2 ± 0.1
(0.47 ref.)
0.75 ± 0.05
PACKAGE DIMENSIONS FOR VBPW34S in millimeters
Flat area 0.3 min.
4.4 ± 0.1
0.18 ± 0.2
2.2
Chip Size
1.95
3x3
0.8 ± 0.1
1.6 ± 0.1
3.9 ± 0.1
Cathode
Anode
1 ± 0.15
6.4 ± 0.3
technical drawings
according to DIN
specifications
Recommended solder pad
8.9
1.8
5.4
Drawing-No.: 6.541-5086.01-4
Issue: 1; 15.04.10
22105
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4
For technical questions, contact: [email protected]
Document Number: 81128
Rev. 1.1, 20-Apr-10
VBPW34S, VBPW34SR
Silicon PIN Photodiode
Vishay Semiconductors
0.1 min.
(0.47 ref.)
Flat area 0.3 min
0.15 ± 0.02
1.2 ± 0.1
0.75 ± 0.05
PACKAGE DIMENSIONS FOR VBPW34SR in millimeters
4.4 ± 0.1
0.18 ± 0.2
2.2
Chip Size
3.9 ± 0.1
Cathode
Anode
0.8 ± 0.1
1.6 ± 0.1
1.95
3x3
1 ± 0.3
6.4 ± 0.3
Recommended solder pad
technical drawings
according to DIN
specifications
8.9
1.8
5.4
Drawing-No.: 6.541-5085.01-4
Issue: 1; 15.04.10
22104
Document Number: 81128
Rev. 1.1, 20-Apr-10
For technical questions, contact: [email protected]
www.vishay.com
5
VBPW34S, VBPW34SR
Vishay Semiconductors
Silicon PIN Photodiode
TAPING DIMENSIONS FOR VBPW34S in millimeters
21730
TAPING DIMENSIONS FOR VBPW34SR in millimeters
21731
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For technical questions, contact: [email protected]
Document Number: 81128
Rev. 1.1, 20-Apr-10
VBPW34S, VBPW34SR
Silicon PIN Photodiode
Vishay Semiconductors
REEL DIMENSIONS FOR VBPW34S AND VBPW34SR in millimeters
21732
SOLDER PROFILE
DRYPACK
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
200
FLOOR LIFE
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
50
19841
100
150
200
250
300
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020
Document Number: 81128
Rev. 1.1, 20-Apr-10
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
For technical questions, contact: [email protected]
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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