BPV10NF Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.78 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters 16140-1 • High bandwidth: > 100 MHz at VR = 12 V • Fast response times DESCRIPTION • Angle of half sensitivity: ϕ = ± 20° BPV10NF is a PIN photodiode with high speed and high radiant sensitivity in black, T-1¾ plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY Ira (mA) ϕ (deg) λ0.5 (nm) 60 ± 20 790 to 1050 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ COMPONENT BPV10NF Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPV10NF Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation Junction temperature SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from body Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified www.vishay.com 338 For technical questions, contact: [email protected] Document Number: 81503 Rev. 1.7, 16-Sep-08 BPV10NF Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage SYMBOL IF = 50 mA VF IR = 100 µA, E = 0 V(BR) MIN. TYP. MAX. 1.0 1.3 UNIT V 60 V VR = 20 V, E = 0 Iro 1 VR = 0 V, f = 1 MHz, E = 0 CD 11 pF Ee = 1 mW/cm2, λ = 870 nm VO 450 mV 5 nA Ee = 1 mW/cm2, λ = 870 nm IK 50 µA Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V Ira 55 µA Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 60 µA TKIra - 0.1 %/K s(λ) 0.55 A/W Angle of half sensitivity ϕ ± 20 deg Wavelength of peak sensitivity λp 940 nm λ0.5 790 to 1050 nm λ = 950 nm η 70 % VR = 20 V, λ = 950 nm NEP 3 x 10-14 W/√Hz Short circuit current Reverse light current Ee = 1 Temperature coefficient of Ira λ = 870 nm, VR = 5 V mW/cm2, VR = 5 V, λ = 870 nm Absolute spectral sensitivity Range of spectral bandwidth Quantum efficiency Noise equivalent power 30 Detectivity VR = 20 V, λ = 950 nm D* 3 x 1012 cm√Hz/W Rise time VR = 50 V, RL = 50 Ω, λ = 820 nm tr 2.5 ns Fall time VR = 50 V, RL = 50 Ω, λ = 820 nm tf 2.5 ns Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.4 Ira rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 20 V 1 1.0 VR = 5 V Ee =1 mW/cm2 λ = 870 nm 0.8 0.6 20 94 8436 1.2 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Document Number: 81503 Rev. 1.7, 16-Sep-08 0 94 8621 20 40 60 100 80 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 339 BPV10NF Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors 1.2 S(λ)rel - Relative Spectral Sensivity Ira - Reverse Light Current (µA) 1000 100 10 VR = 5 V λ = 870 nm 1 0.1 0.01 0.1 0.6 0.4 0.2 850 Fig. 3 - Reverse Light Current vs. Irradiance 950 1050 1150 λ - Wavelength (nm) 94 8426 Ee - Irradiance (mW/cm²) 94 8622 0.8 0.0 750 10 1 1.0 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 100 10° 20° 30° 2 0.5 mW/cm2 2 0.2 mW/cm 10 λ = 870 nm 0.1 mW/cm2 0.05 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 1 0.1 80° 0.02 mW/cm2 94 8623 1 ϕ - Angular Displacement Srel - Relative Sensitivity Ira - Reverse Light Current (µA) 1 mW/cm 100 10 0.6 0.4 0.2 0 94 8624 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 12 10 E=0 f = 1 MHz 8 6 4 2 0 0.1 94 8439 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage www.vishay.com 340 For technical questions, contact: [email protected] Document Number: 81503 Rev. 1.7, 16-Sep-08 BPV10NF Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 96 12198 Document Number: 81503 Rev. 1.7, 16-Sep-08 For technical questions, contact: [email protected] www.vishay.com 341 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1