VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW VEMT2520X01 VEMT2500X01 • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: = ± 15° • Package matched with IR emitter series VSMB2000X01 16758-10 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering DESCRIPTION • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC VEMT2500X01 series are silicon NPN epitaxial planar phototransistors in a miniature dome lens, clear epoxy package for surface mounting. The device is sensitive to visible and near infrared radiation. • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT Ica (mA) (deg) 0.1 (nm) VEMT2500X01 6 ± 15 470 to 1090 VEMT2520X01 6 ± 15 470 to 1090 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT2500X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2520X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Collector emitter voltage PARAMETER TEST CONDITION VCEO 20 V Emitter collector voltage VECO 7 V IC 50 mA PV 100 mW Tj 100 °C Tamb - 40 to + 100 °C Collector current Power power dissipation Junction temperature Operating temperature range Document Number: 81134 Rev. 1.1, 21-Feb-11 Tamb 75 °C For technical questions, contact: [email protected] UNIT www.vishay.com 1 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Storage temperature range Soldering temperature SYMBOL VALUE UNIT °C Tstg - 40 to + 100 Acc. reflow profile fig. 8 Tsd 260 °C Acc. J-STD-051 RthJA 250 K/W Thermal resistance junction/ambient PV - Power Dissipation (mW) 120 100 80 60 RthJA = 250 K/W 40 20 0 0 21619 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current TEST CONDITION SYMBOL MIN. IC = 0.1 mA VCEO 20 TYP. MAX. UNIT VCE = 5 V, E = 0 ICEO 1 100 nA VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V ICA Wavelength of peak sensitivity Range of spectral bandwidth Temperature coefficient of Ica www.vishay.com 2 3 6 Angle of half sensitivity Collector emitter saturation voltage V pF 9 mA ± 15 deg p 850 nm 0.1 470 to 1090 IC = 0.05 mA VCEsat Ee = 1 mW/cm2, = 950 nm, VCE = 5 V TkIca For technical questions, contact: [email protected] nm 0.4 1.1 V %/K Document Number: 81134 Rev. 1.1, 21-Feb-11 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.2 S (λ)rel - Relative Spectral Sensitivity IF = 0 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 1.0 0.8 0.6 0.4 0.2 1 0 0 10 20594 20 30 40 50 60 70 80 90 100 400 500 Tamb - Ambient Temperature (°C) 600 700 800 900 1000 1100 λ - Wavelength (nm) 21555 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 2 - Collector Dark Current vs. Ambient Temperature 0° 10° 20° 30° Srel - Relative Sensitivity Ica - Collector Light Current (mA) 100 10 1 VCE = 5 V, λ = 950 nm 0.1 0.9 50° 0.8 60° 70° 0.7 80° 0.01 0.01 0.1 1 0.6 10 Ee - Irradiance (mW/cm²) 21573 Fig. 3 - Collector Light Current vs. Irradiance 0.2 0 Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 2.0 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 Ica rel - Relative Collector Current 90 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 0 20599 0.4 94 8248 100 tr/tf - Rise/Fall Time (µs) 40° 1.0 ϕ - Angular Displacement ICE0 - Collector Dark Current (nA) 10 000 250 0 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) Fig. 4 - Rise/Fall Time vs. Collector Current Document Number: 81134 Rev. 1.1, 21-Feb-11 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 3 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 0 0 50 100 19841 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS VEMT2500X01 in millimeters Ø 1.8 ± 0.1 1.6 0.1 9 2.77 ± 0.2 0.05 0.3 ± 0.1 0.4 2.2 5.8 2.2 ± 0.2 Exposed copper ± 0.2 1.1 ± 0.1 Z 20:1 2.3 0.254 ± 0.2 0.4 0.5 2.3 Collector PIN ID 1.7 Emitter 0.75 Solder pad proposal acc. IPC 7351 Technical drawings according to DIN specifications Not indicated to Ø 2.3 lerances ±0.1 ± 0.1 6.7 Drawing-No.: 6.544-5391.01-4 Issue: 1; 26.09.08 21570 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81134 Rev. 1.1, 21-Feb-11 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors PACKAGE DIMENSIONS VEMT2520X01 in millimeters Ø 1.8 0 .1 9 1.6 0.05 2.77 ± 0.2 0.3 0.4 2.2 2.2 4.2 ± 0.2 Exposed copper 0.6 0.75 Collector Pin ID Solder pad proposal acc. IPC 7351 0.254 2.3 ± 0.2 0.4 0.5 2.3 ± 0.2 Emitter Technical drawings according to DIN specifications Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.01-4 Issue: 4; 28.01.09 21569 Document Number: 81134 Rev. 1.1, 21-Feb-11 For technical questions, contact: [email protected] www.vishay.com 5 VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor TAPE AND REEL DIMENSIONS VEMT2500X01 in millimeters Unreel direction X 2. Ø 62 ± 0.5 Reel Ø 13 ± 0.5 Ø 330 ± 1 0.5 5± Tape position coming out from reel 6000 pcs/reel Label posted here Technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode Ø 1.55 ± 0.05 I VEMT2000 VEMT2500 4 ± 0.1 2 ± 0.05 X 2:1 VEMD2000 5.5 ± 0.05 VEMD2500 VSMB2000 VSMG2000 VSMY2850RG 3.05 ± 0.1 II 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 81134 Rev. 1.1, 21-Feb-11 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2520X01 in millimeters Reel X Unreel direction 5± Ø 62 ± 0.5 2. Ø 13 ± 0.5 Ø 330 ± 1 0.5 Tape position coming out from reel 6000 pcs/reel technical drawings according to DIN specifications Label posted here 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Ø 1.55 ± 0.05 Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode I VEMT2020 VEMT2520 4 ± 0.1 2 ± 0.05 X 2:1 VSMB2020 VEMD2020 VEMD2520 VSMY2850G 3.05 ± 0.1 II 4 ± 0.1 5.5 ± 0.05 VSMG2020 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.09 21571 Document Number: 81134 Rev. 1.1, 21-Feb-11 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1