VISHAY SS5P4HE3/87A

New Product
SS5P3 & SS5P4
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.1 mm
eSMP TM Series
• Ideal for automated placement
K
• Low forward voltage drop, low power losses
• High efficiency
1
• Low thermal resistance
2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
TO-277A (SMPC)
K
Cathode
Anode 1
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Anode 2
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
5A
VRRM
30 V, 40 V
IFSM
150 A
MECHANICAL DATA
Case: TO-277A (SMPC)
EAS
20 mJ
Epoxy meets UL 94V-0 flammability rating
VF at IF = 5.0 A
0.403 V
TJ max.
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS5P3
SS5P4
S53
S54
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (Fig. 1)
IF(AV)
5.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2 A, TJ = 25 °C
EAS
20
mJ
TJ, TSTG
- 55 to + 150
°C
Operating junction and storage temperature range
Document Number: 88982
Revision: 22-Nov-07
30
40
V
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New Product
SS5P3 & SS5P4
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 2.5 A
IF = 5.0 A
TA = 25 °C
IF = 2.5 A
IF = 5.0 A
TA = 125 °C
Maximum reverse current (1)
rated VR
TA = 25 °C
TA = 125 °C
Typical junction capacitance
4.0 V, 1 MHz
Maximum instantaneous forward voltage (1)
SYMBOL
TYP.
MAX.
UNIT
0.416
0.476
0.52
0.312
0.403
0.45
IR
61.8
26.7
250
40
µA
mA
CJ
280
-
pF
V
VF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RθJA
RθJL
Typical thermal resistance
SS5P3
SS5P4
(1)
UNIT
60
3
°C/W
Note:
(1) Units mounted on recommended P.C.B. 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS5P4-E3/86A
0.10
86A
1500
7" diameter plastic tape and reel
SS5P4-E3/87A
0.10
87A
6500
13" diameter plastic tape and reel
SS5P4HE3/86A (1)
0.10
86A
1500
7" diameter plastic tape and reel
SS5P4HE3/87A (1)
0.10
87A
6500
13" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.0
D = 0.5
Resistive or Inductive Load
5.0
2.5
4.0
3.0
2.0
TL measured
at the Cathode Band Terminal
1.0
D = 0.8
D = 0.3
Average Power Loss (W)
Average Forward Rectified Current (A)
6.0
D = 0.2
D = 0.1
D = 1.0
2.0
1.5
T
1.0
0.5
D = tp/T
tp
0
0
80
90
100
110
120
130
140
150
0
1
2
3
4
5
6
Lead Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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Document Number: 88982
Revision: 22-Nov-07
New Product
SS5P3 & SS5P4
Vishay General Semiconductor
1000
TA = 150 °C
10
TA = 125 °C
1
TA = 25 °C
0.1
0.01
100
0
0.2
0.4
0.6
0.8
0.1
1.0
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
100
Transient Thermal Impedance (°C/W)
1000
Instantaneous Reverse Current (mA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Document Number: 88982
Revision: 22-Nov-07
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New Product
SS5P3 & SS5P4
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
0.026 (0.65) NOM.
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189
MIN.
(4.80)
0.189 (4.80)
0.173 (4.40)
0.186
MIN.
(4.72)
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050
MIN.
(1.27)
0.084 (2.13) NOM.
0.041
(1.04)
0.053 (1.35)
0.041 (1.05)
0.055
MIN.
(1.40)
Conform to JEDEC TO-277A
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Document Number: 88982
Revision: 22-Nov-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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