3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S –6 V Gate 2 to source voltage VG2S –6 V Drain current ID 50 mA Channel power dissipation Pch 100 mW Channel temperature Tch 125 °C Storage temperature Tstg –55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test conditions Drain to source leakage current I DSX — — 50 µA VDS = 12 V, VG1S = –3 V, VG2S = 0 Gate 1 to source breakdown voltage V(BR)G1SS –6 — — V I G1 = –10 µA, VG2S = VDS = 0 Gate 2 to source breakdown voltage V(BR)G2SS –6 — — V I G2 = –10 µA, VG1S = VDS = 0 Gate 1 leakage current I G1SS — — –5 µA VG1S = –5 V, VG2S = VDS = 0 Gate 2 leakage current I G2SS — — –5 µA VG2S = –5 V, VG1S = VDS = 0 Drain current I DSS 14 19 28 mA VDS = 5 V, VG1S = VG2S = 0 Gate 1 to source cutoff voltage VG1S(off) — –1.2 –1.6 V VDS = 5 V, VG2S = 0, I D = 100 µA Gate 2 to source cutoff voltage VG2S(off) — –1.2 –1.6 V VDS = 5 V, VG1S = 0, I D = 100 µA Forward transfer admittance |yfs| 20 31 — mS VDS = 5 V, VG2S = 1 V, I D = 10 mA, f = 1 kHz Input capacitance Ciss — 0.58 1.0 pF VDS = 5 V, VG1S = VG2S = –3 V, f = 1 MHz Output capacitance Coss — 0.36 0.6 pF Reverse transfer capacitance Crss — 0.028 0.05 pF Power gain PG 17 19 — dB Noise figure NF — 1.3 2.0 dB Note: Marking is “XR–”. 2 Symbol VDS = 5 V, VG2S = 1 V, I D = 10 mA, f = 900 MHz 3SK239A 3 3SK239A 4 3SK239A 5 3SK239A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 6