2SK1575 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 13 dB, ηD = 65% typ (f = 190 MHz) • Compact package Suitable for push - pull circuit Outline 2SK1575 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 180 V Gate to source voltage VGSS ±20 V Drain current ID 16 A 1 Channel dissipation Pch* 200 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage* 1 V(BR)DSS 180 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage* 1 V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 — — 1 mA VDS = 140 V, VGS = 0 VGS(off) 0.5 — 2.0 V I D = 1 mA, VDS = 10 V VDS(on) — 3.8 6.0 V I D = 4 A, VGS = 10 V*2 Forward transfer admittance*1 |yfs| 0.9 1.25 — S I D = 3 A, VDS = 20 V*2 Input capacitance*1 Ciss — 440 — pF VGS = 5 V, VDS = 0 f = 1 MHz Output capacitance*1 Coss — 75 — pF VDS = 50 V, VGS = 0 f = 1 MHz Reverse transfer capacitance* 1 Crss — 0.5 — pF VGD = –50 V, f = 1 MHz Output Power Po 180 220 — W VDS = 80 V, IDQ = 0.2 A Drain Efficiency ηD — 65 — % f = 190 MHz, Pin = 10 W Zero gate voltage drain current* 1 I DSS Gate to source cutoff voltage* 1 Drain to source cutoff voltage* Notes: 1. Shows / unit FET 2. Pulse Test 2 1 2SK1575 3 2SK1575 4 2SK1575 Package Dimensions Unit: mm 5 2SK1575 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 6