BPW76 Vishay Telefunken Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal is available to enable biasing and sensitivity control. Features D D D D D D D D D Hermetically sealed case Flat window Very wide viewing angle ϕ = ± 40° 94 8401 Exact central chip alignment Long range light barrier with an additional optics Base terminal available High photo sensitivity Suitable for visible and near infrared radiation Selected into sensitivity groups Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Document Number 81526 Rev. 2, 20-May-99 Test Conditions x tp/T = 0.5, tp 10 ms Tamb 25 °C x t x5s Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA RthJC Value 80 70 5 50 100 250 125 –55...+125 260 400 150 Unit V V V mA mA mW °C °C °C K/W K/W www.vishay.de • FaxBack +1-408-970-5600 1 (6) BPW76 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn–On Time Turn–Off Time Cut–Off Frequency Test Conditions IC = 1 mA Symbol V(BR)CE Min 70 Typ Max Unit V 100 VCEsat 1 6 ±40 850 620...980 0.15 nA pF deg nm nm V ton 6 ms toff 5 ms fc 110 kHz O VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 ICEO CCEO ϕ lp l0.5 Ee = 1 mW/cm2, l = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W 0.3 Type Dedicated Characteristics Tamb = 25_C Parameter Test Conditions Collector Light g Current Ee=1mW/cm2, l=950nm, VCE=5V Type BPW76A BPW76B Symbol Ica Ica Min 0.4 0.6 Typ 0.6 1.2 Max 0.8 Unit mA mA Typical Characteristics (Tamb = 25_C unless otherwise specified) 106 I CEO – Collector Dark Current ( nA ) P tot – Total Power Dissipation ( mW ) 800 600 RthJC 400 200 RthJA 104 103 102 VCE=20V E=0 101 100 0 0 94 8342 105 25 50 75 100 125 Tamb – Ambient Temperature ( °C ) Figure 1. Total Power Dissipation vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (6) 150 20 94 8343 50 100 150 Tamb – Ambient Temperature ( °C ) Figure 2. Collector Dark Current vs. Ambient Temperature Document Number 81526 Rev. 2, 20-May-99 BPW76 C CEO – Collector Emitter Capacitance ( pF ) Vishay Telefunken I ca rel – Relative Collector Current 3.5 3.0 VCE=5V Ee=1mW/cm2 l=950nm 2.5 2.0 1.5 1.0 0.5 0 0 50 1 0.1 VCE=5V l=950nm 0.1 mW / cm2 ) 100 10 12 VCE=5V RL=100W l=950nm 10 8 6 ton 4 toff 2 Ee=1 mW/cm2 BPW 76 A l=950nm 0 0.2 mW/cm2 0.1 0.1 mW/cm2 0.05 mW/cm2 1 10 VCE – Collector Emitter Voltage ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81526 Rev. 2, 20-May-99 8 12 16 Figure 7. Turn On/Turn Off Time vs. Collector Current 0.01 0.1 4 IC – Collector Current ( mA ) 94 8253 0.5 mW/cm2 94 8346 1 VCE – Collector Emitter Voltage ( V ) Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage S ( l ) rel – Relative Spectral Sensitivity Ica – Collector Light Current ( mA ) 0 10 1 Figure 4. Collector Light Current vs. Irradiance 1 4 0 0.1 Ee – Irradiance ( 94 8345 8 t on / t off – Turn on / Turn off Time ( m s ) Ica – Collector Light Current ( mA ) 10 0.001 0.01 12 94 8247 Figure 3. Relative Collector Current vs. Ambient Temperature 0.01 f=1MHz 16 150 100 Tamb – Ambient Temperature ( °C ) 94 8344 20 1.0 0.8 0.6 0.4 0.2 0 400 100 94 8348 600 800 l – Wavelength ( nm ) 1000 Figure 8. Relative Spectral Sensitivity vs. Wavelength www.vishay.de • FaxBack +1-408-970-5600 3 (6) BPW76 Vishay Telefunken S rel – Relative Sensitivity 0° 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8347 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 81526 Rev. 2, 20-May-99 BPW76 Vishay Telefunken Dimensions in mm 96 12175 Document Number 81526 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) BPW76 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 81526 Rev. 2, 20-May-99