VISHAY BPW76

BPW76
Vishay Telefunken
Silicon NPN Phototransistor
Description
BPW76 is a high sensitive silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically
sealed metal case.
Its flat glass window makes it ideal for applications with
external optics.
A base terminal is available to enable biasing and sensitivity control.
Features
D
D
D
D
D
D
D
D
D
Hermetically sealed case
Flat window
Very wide viewing angle ϕ = ± 40°
94 8401
Exact central chip alignment
Long range light barrier with an additional optics
Base terminal available
High photo sensitivity
Suitable for visible and near infrared radiation
Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Document Number 81526
Rev. 2, 20-May-99
Test Conditions
x
tp/T = 0.5, tp
10 ms
Tamb
25 °C
x
t
x5s
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
RthJC
Value
80
70
5
50
100
250
125
–55...+125
260
400
150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
K/W
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BPW76
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Test Conditions
IC = 1 mA
Symbol
V(BR)CE
Min
70
Typ
Max
Unit
V
100
VCEsat
1
6
±40
850
620...980
0.15
nA
pF
deg
nm
nm
V
ton
6
ms
toff
5
ms
fc
110
kHz
O
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
ICEO
CCEO
ϕ
lp
l0.5
Ee = 1 mW/cm2,
l = 950 nm, IC = 0.1 mA
VS = 5 V, IC = 5 mA,
RL = 100 W
VS = 5 V, IC = 5 mA,
RL = 100 W
VS = 5 V, IC = 5 mA,
RL = 100 W
0.3
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Light
g Current Ee=1mW/cm2,
l=950nm, VCE=5V
Type
BPW76A
BPW76B
Symbol
Ica
Ica
Min
0.4
0.6
Typ
0.6
1.2
Max
0.8
Unit
mA
mA
Typical Characteristics (Tamb = 25_C unless otherwise specified)
106
I CEO – Collector Dark Current ( nA )
P tot – Total Power Dissipation ( mW )
800
600
RthJC
400
200
RthJA
104
103
102
VCE=20V
E=0
101
100
0
0
94 8342
105
25
50
75
100
125
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
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150
20
94 8343
50
100
150
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
Document Number 81526
Rev. 2, 20-May-99
BPW76
C CEO – Collector Emitter Capacitance ( pF )
Vishay Telefunken
I ca rel – Relative Collector Current
3.5
3.0
VCE=5V
Ee=1mW/cm2
l=950nm
2.5
2.0
1.5
1.0
0.5
0
0
50
1
0.1
VCE=5V
l=950nm
0.1
mW / cm2
)
100
10
12
VCE=5V
RL=100W
l=950nm
10
8
6
ton
4
toff
2
Ee=1 mW/cm2
BPW 76 A
l=950nm
0
0.2 mW/cm2
0.1
0.1 mW/cm2
0.05 mW/cm2
1
10
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Document Number 81526
Rev. 2, 20-May-99
8
12
16
Figure 7. Turn On/Turn Off Time vs. Collector Current
0.01
0.1
4
IC – Collector Current ( mA )
94 8253
0.5 mW/cm2
94 8346
1
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
S ( l ) rel – Relative Spectral Sensitivity
Ica – Collector Light Current ( mA )
0
10
1
Figure 4. Collector Light Current vs. Irradiance
1
4
0
0.1
Ee – Irradiance (
94 8345
8
t on / t off – Turn on / Turn off Time ( m s )
Ica – Collector Light Current ( mA )
10
0.001
0.01
12
94 8247
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
f=1MHz
16
150
100
Tamb – Ambient Temperature ( °C )
94 8344
20
1.0
0.8
0.6
0.4
0.2
0
400
100
94 8348
600
800
l – Wavelength ( nm )
1000
Figure 8. Relative Spectral Sensitivity vs. Wavelength
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BPW76
Vishay Telefunken
S rel – Relative Sensitivity
0°
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8347
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
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Document Number 81526
Rev. 2, 20-May-99
BPW76
Vishay Telefunken
Dimensions in mm
96 12175
Document Number 81526
Rev. 2, 20-May-99
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BPW76
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 81526
Rev. 2, 20-May-99