TCST1000/ TCST2000 Vishay Telefunken Transmissive Optical Sensor without Aperture Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. B) A) Applications D Contactless optoelectronic switch, control and counter 15134 Features 95 10795 D Compact construction D No setting efforts D 2 case variations D Polycarbonate case protected against ambient light D Current Transfer Ratio (CTR) of typical 2.5% A + E + C C 5.50 0.22” Top view Order Instruction Ordering Code TCST1000A) TCST2000B) Document Number 83762 Rev. A3, 08–Jun–99 Resolution (mm) / Aperture (mm) 0.6 / non 0.6 / non Remarks No mounting flags With two mounting flags www.vishay.com 1 (8) TCST1000/ TCST2000 Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 3 100 100 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 70 7 100 200 150 100 Unit V V mA mA mW °C Symbol Ptot Tamb Tstg Tsd Value 250 –55 to +85 –55 to +100 260 Unit mW °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp /T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions Tamb ≤ 25°C 2 mm from case, t ≤ 5 s Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 60 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V pF Test Conditions IC = 1 mA IE = 10 mA VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA Test Conditions VCE = 5 V, IF = 20 mA IF = 20 mA, IC = 25 mA Symbol IC VCEsat Min. 0.25 Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current 100 Coupler Parameter Collector current Collector emitter saturation voltage Resolution, path of the shutter crossing the radiant sensitive zone www.vishay.com 2 (8) ICrel = 10/90% Typ. 0.5 Max. 0.4 0.6 Unit mA V mm Document Number 83762 Rev. A3, 08–Jun–99 TCST1000/ TCST2000 Vishay Telefunken Switching Characteristics Parameter Turn-on time Turn-off time 0 IF Test Conditions VS = 5 V, IC = 1 mA, RL = 100 W (see figure 1) Symbol ton toff Typ. 15.0 10.0 +5V IF 96 11698 IC = 2 mA; adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 ms Unit ms ms IF 0 t tp IC Channel I 50 W 100 W Channel II Oscilloscope RL 1 MW y CL x 20 pF 100% 90% 95 10890 Figure 1. Test circuit 10% 0 t tr ts td ton tp td tr ton (= td + tr) tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 2. Switching times Document Number 83762 Rev. A3, 08–Jun–99 www.vishay.com 3 (8) TCST1000/ TCST2000 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 400 300 Coupled device 200 Phototransistor IR-diode 100 VCE=25V IF=0 1000 100 10 0 1 0 30 60 90 120 150 Tamb – Ambient Temperature ( °C ) 95 11088 0 25 Figure 3. Total Power Dissipation vs. Ambient Temperature 50 100 75 Tamb – Ambient Temperature ( °C ) 95 11090 Figure 6. Collector Dark Current vs. Ambient Temperature 10 1000.0 IC – Collector Current ( mA ) I F – Forward Current ( mA ) VCE=5V 100.0 10.0 1.0 0.1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 96 11862 0.1 1 100 10 IF – Forward Current ( mA ) 95 11083 Figure 4. Forward Current vs. Forward Voltage Figure 7. Collector Current vs. Forward Current 2.0 10 VCE=5V IF=20mA IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio 1 1.5 1.0 0.5 IF=50mA 1 20mA 10mA 0.1 5mA 2mA 0 –25 95 11089 0.01 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 4 (8) 0.1 95 11084 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 8. Collector Current vs. Collector Emitter Voltage Document Number 83762 Rev. A3, 08–Jun–99 TCST1000/ TCST2000 Vishay Telefunken 110 CTR – Current Transfer Ratio ( % ) 100 100 I Crel – Relative Collector Current VCE=5V 10 1 1 100 10 15141 IF – Forward Current ( mA ) 95 11085 t on / t off – Turn on / Turn off Time ( m s ) Figure 9. Current Transfer Ratio vs. Forward Current 0 80 70 s 60 50 40 30 20 10 0 –0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5 0.1 0.1 90 s – Displacement ( mm ) Figure 11. Relative Collector Current vs. Displacement 20 Non Saturated Operation VS=5V RL=100W 15 10 ton 5 toff 0 0 95 11086 2 4 6 8 10 IC – Collector Current ( mA ) Figure 10. Turn on / off Time vs. Collector Current Document Number 83762 Rev. A3, 08–Jun–99 www.vishay.com 5 (8) TCST1000/ TCST2000 Vishay Telefunken Dimensions of TCST1000 in mm 96 12099 www.vishay.com 6 (8) Document Number 83762 Rev. A3, 08–Jun–99 TCST1000/ TCST2000 Vishay Telefunken Dimensions of TCST2000 in mm 96 12098 Document Number 83762 Rev. A3, 08–Jun–99 www.vishay.com 7 (8) TCST1000/ TCST2000 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 8 (8) Document Number 83762 Rev. A3, 08–Jun–99